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Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1−ySny alloys

Applied physics letters, 2014-10, Vol.105 (14)

2014

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Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

Applied physics letters, 2012-08, Vol.101 (7), p.72105

2012

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Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n‑Type Doping Based on Custom-Designed Chemistries

Chemistry of materials, 2014-10, Vol.26 (20), p.6033-6041

2014

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Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

Applied physics letters, 2015-03, Vol.106 (9)

2015

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Compositional dependence of the direct and indirect band gaps in Ge1−ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials

Semiconductor science and technology, 2014-11, Vol.29 (11)

2014

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Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Journal of applied physics, 2014-10, Vol.116 (13)

2014

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Type-I Ge∕Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap

Applied physics letters, 2004-08, Vol.85 (7), p.1175-1177

2004

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TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

Annual review of materials research, 2006-01, Vol.36 (1), p.497-554

2006

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Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Applied physics letters, 2013-04, Vol.102 (17)

2013

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Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

Applied physics letters, 2011-02, Vol.98 (6)

2011

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Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Journal of applied physics, 2016-07, Vol.120 (2)

2016

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Non-radiative recombination in Ge1−ySny light emitting diodes: The role of strain relaxation in tuned heterostructure designs

Journal of applied physics, 2015-06, Vol.117 (24)

2015

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Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys

Physical review letters, 2009-03, Vol.102 (10), p.107403-107403, Article 107403

2009

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Compositional dependence of the absorption edge and dark currents in Ge1?x?ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4

Applied physics letters, 2012-11, Vol.101 (22)

2012

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Ge1−x−ySixSny light emitting diodes on silicon for mid-infrared photonic applications

Journal of applied physics, 2015-10, Vol.118 (13)

2015

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Frustrated incomplete donor ionization in ultra-low resistivity germanium films

Applied physics letters, 2014-12, Vol.105 (23)

2014

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Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

Thin solid films, 2010-02, Vol.518 (9), p.2531-2537

2010

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Ge–Sn semiconductors for band-gap and lattice engineering

Applied physics letters, 2002-10, Vol.81 (16), p.2992-2994

2002

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Photoluminescence from heavily doped GeSn:P materials grown on Si(100)

Applied physics letters, 2011-10, Vol.99 (17), p.171910-171910-3

2011

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Room temperature emission spectroscopy of GeSn waveguides under optical pumping

AIP advances, 2022-07, Vol.12 (7), p.075016-075016-6

2022

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Electroluminescence from Ge1−ySny diodes with degenerate pn junctions

Applied physics letters, 2015-09, Vol.107 (12)

2015

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Crystalline (Al1–x B x )PSi3 and (Al1–x B x )AsSi3 Tetrahedral Phases via Reactions of Al(BH4)3 and M(SiH3)3 (M = P, As)

Chemistry of materials, 2015-04

2015

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Synthesis and optical properties of (GaAs)yGe5-2y alloys assembled from molecular building blocks

Applied physics letters, 2017-09, Vol.111 (12)

2017

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Molecular epitaxy of pseudomorphic Ge1−ySny (y = 0.06-0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4

Semiconductor science and technology, 2017-01, Vol.32 (2)

2017

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Raman scattering in Ge1-ySny alloys

Solid state communications, 2007-11, Vol.144 (5-6), p.240-244

2007

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Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1−ySny alloys

Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n‑Type Doping Based on Custom-Designed Chemistries

Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

Compositional dependence of the direct and indirect band gaps in Ge1−ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials

Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Type-I Ge∕Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap

TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Non-radiative recombination in Ge1−ySny light emitting diodes: The role of strain relaxation in tuned heterostructure designs

Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys

Compositional dependence of the absorption edge and dark currents in Ge1?x?ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4

Ge1−x−ySixSny light emitting diodes on silicon for mid-infrared photonic applications

Frustrated incomplete donor ionization in ultra-low resistivity germanium films

Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

Ge–Sn semiconductors for band-gap and lattice engineering

Photoluminescence from heavily doped GeSn:P materials grown on Si(100)

Room temperature emission spectroscopy of GeSn waveguides under optical pumping

Electroluminescence from Ge1−ySny diodes with degenerate pn junctions

Crystalline (Al1–x B x )PSi3 and (Al1–x B x )AsSi3 Tetrahedral Phases via Reactions of Al(BH4)3 and M(SiH3)3 (M = P, As)

Synthesis and optical properties of (GaAs)yGe5-2y alloys assembled from molecular building blocks

Molecular epitaxy of pseudomorphic Ge1−ySny (y = 0.06-0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4

Raman scattering in Ge1-ySny alloys

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