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Blue-phase templated fabrication of three-dimensional nanostructures for photonic applications

Nature materials, 2012-05, Vol.11 (7), p.599-603

2012

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Reduction of RESET current in phase change memory devices by carbon doping in GeSbTe films

Journal of applied physics, 2015-03, Vol.117 (11), p.115703

2015

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Chemical bonding states and dopant redistribution of heavily phosphorus-doped epitaxial silicon films: Effects of millisecond laser annealing and doping concentration

Applied surface science, 2020-02, Vol.504, p.144447, Article 144447

2020

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Effects of dopant concentration on microstructure and strain states of in-situ phosphorus-doped epitaxial silicon films during dry oxidation

Thin solid films, 2020-09, Vol.709, p.138208, Article 138208

2020

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Physical and electrical characteristics of GexSb100−x films for use as phase-change materials

Thin solid films, 2018-08, Vol.659, p.1-6

2018

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Effect of selenium doping on the crystallization behaviors of GeSb for phase-change memory applications

Thin solid films, 2018-05, Vol.653, p.173-178

2018

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Phase-change characteristics of carbon-doped GeSbSe thin films for PRAM applications

Journal of materials science. Materials in electronics, 2019-12, Vol.30 (23), p.20751-20757

2019

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Vectorizing the spatial structure of high-harmonic radiation from gas

Nature communications, 2019-05, Vol.10 (1), p.2020-2020, Article 2020

2019

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Optically activated shutter using a photo-tunable short-pitch chiral nematic liquid crystal

Applied physics letters, 2013-09, Vol.103 (10)

2013

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Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition

Applied physics letters, 2002-07, Vol.81 (3), p.472-474

2002

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Scalable CGeSbTe-based phase change memory devices employing U-shaped cells

Thin solid films, 2017-07, Vol.634, p.141-146

2017

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Use of NH3 etchant for voids suppression to enhance set cycles in CGeSbTe-based phase change memory devices

Thin solid films, 2016-10, Vol.616, p.502-506

2016

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Phase change memory employing a Ti diffusion barrier for reducing reset current

Thin solid films, 2016-08, Vol.612, p.135-140

2016

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Size and Shape Effect of SiC Source/Drain on Strained Si

Journal of nanoscience and nanotechnology, 2014-10, Vol.14 (10), p.7679-7682

2014

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Strain behavior of epitaxial Si1−xCx films on silicon substrates during dry oxidation

Thin solid films, 2013-11, Vol.546, p.226-230

2013

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Comparison of the Optimum Number of Quantum Wells in GaN-Based Blue Light-Emitting Diodes Grown on Sapphire and Si(111) Substrates

Journal of nanoscience and nanotechnology, 2017-06, Vol.17 (6), p.4235-4238

2017

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Characterization of channel strain evolution upon the silicidation of recessed source/drain Si1−xGex structures

Applied physics letters, 2011-09, Vol.99 (13)

2011

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Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

Thin solid films, 2010-02, Vol.518 (8), p.2065-2069

2010

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Dielectric characteristics of Al2O3–HfO2 nanolaminates on Si(100)

Applied physics letters, 2002-08, Vol.81 (6), p.1071-1073

2002

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Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature

Applied physics letters, 2009-07, Vol.95 (4)

2009

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Defect states in epitaxial HfO2 films induced by atomic transport from n -GaAs (100) substrate

Journal of applied physics, 2011-06, Vol.109 (11)

2011

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Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43) film

AIP advances, 2016-02, Vol.6 (2), p.025013-025013-11

2016

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Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate

Applied physics letters, 2008-11, Vol.93 (19)

2008

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Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films

AIP advances, 2015-08, Vol.5 (8), p.087119-087119-12

2015

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Achievement of a high channel strain via dry oxidation of recessed source/drain Si1−xGex structures

Applied physics letters, 2011-03, Vol.98 (13)

2011

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Blue-phase templated fabrication of three-dimensional nanostructures for photonic applications

Reduction of RESET current in phase change memory devices by carbon doping in GeSbTe films

Chemical bonding states and dopant redistribution of heavily phosphorus-doped epitaxial silicon films: Effects of millisecond laser annealing and doping concentration

Effects of dopant concentration on microstructure and strain states of in-situ phosphorus-doped epitaxial silicon films during dry oxidation

Physical and electrical characteristics of GexSb100−x films for use as phase-change materials

Effect of selenium doping on the crystallization behaviors of GeSb for phase-change memory applications

Phase-change characteristics of carbon-doped GeSbSe thin films for PRAM applications

Vectorizing the spatial structure of high-harmonic radiation from gas

Optically activated shutter using a photo-tunable short-pitch chiral nematic liquid crystal

Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition

Scalable CGeSbTe-based phase change memory devices employing U-shaped cells

Use of NH3 etchant for voids suppression to enhance set cycles in CGeSbTe-based phase change memory devices

Phase change memory employing a Ti diffusion barrier for reducing reset current

Size and Shape Effect of SiC Source/Drain on Strained Si

Strain behavior of epitaxial Si1−xCx films on silicon substrates during dry oxidation

Comparison of the Optimum Number of Quantum Wells in GaN-Based Blue Light-Emitting Diodes Grown on Sapphire and Si(111) Substrates

Characterization of channel strain evolution upon the silicidation of recessed source/drain Si1−xGex structures

Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

Dielectric characteristics of Al2O3–HfO2 nanolaminates on Si(100)

Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature

Defect states in epitaxial HfO2 films induced by atomic transport from n -GaAs (100) substrate

Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43) film

Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate

Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films

Achievement of a high channel strain via dry oxidation of recessed source/drain Si1−xGex structures

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