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Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers

IEEE photonics technology letters, 2005-05, Vol.17 (5), p.962-964

2005

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Repetition rate control of optical self-injected passively mode-locked quantum-well lasers: experiment and simulation

Electronics letters, 2018-03, Vol.54 (6), p.374-376

2018

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Compact high-current diode laser nanosecond-pulse source with high efficiency and 13 mu J output energy

Electronics letters, 2015-01, Vol.51 (1), p.83-85

2015

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Vertical GaN MISFET for chip-on-chip high speed laser driving applications

Electronics letters, 2020-09, Vol.56 (20), p.1084-1086

2020

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Mode-locked diode laser-based two-photon polymerisation

Electronics letters, 2020-01, Vol.56 (2), p.91-93

2020

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Properties and fabrication of high-order Bragg gratings for wavelength stabilization of diode lasers

Semiconductor science and technology, 2012-05, Vol.27 (5), p.55009

2012

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High-power 980-nm DFB RW lasers with a narrow vertical far field

IEEE photonics technology letters, 2006-03, Vol.18 (6), p.737-739

2006

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Asynchronous sampling terahertz time-domain spectroscopy using semiconductor lasers

Electronics letters, 2018-05, Vol.54 (10), p.640-641

2018

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High-Power 980-nm Broad-Area Lasers Spectrally Stabilized by Surface Bragg Gratings

IEEE photonics technology letters, 2010-03, Vol.22 (5), p.284-286

2010

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Generation of spectrally stable continuous-wave emission and ns pulses with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

Optics express, 2014-10, Vol.22 (20), p.23980-23989

2014

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Electro-optical characteristics of 808 nm ridge-waveguide lasers operated with high-current nanosecond pulses

Semiconductor science and technology, 2017-03, Vol.32 (4), p.45016

2017

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High peak power pulses from dispersion optimised modelocked semiconductor laser

Electronics letters, 2013-06, Vol.49 (13), p.838-839

2013

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Compact high-current diode laser nanosecond-pulse source with high efficiency and 13 µJ output energy

Electronics letters, 2015-01, Vol.51 (1), p.83-85

2015

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High-Power Monolithic Two-Mode DFB Laser Diodes for the Generation of THz Radiation

IEEE journal of selected topics in quantum electronics, 2008-03, Vol.14 (2), p.289-294

2008

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Dynamics of a gain-switched distributed feedback ridge waveguide laser in nanoseconds time scale under very high current injection conditions

Optics express, 2013-02, Vol.21 (3), p.2777-2786

2013

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24-wavelength distributed Bragg reflector laser array with surface gratings

Electronics letters, 2015-08, Vol.51 (17), p.1352-1354

2015

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Y-branch coupled DFB-lasers based on high-order Bragg gratings for wavelength stabilization

Semiconductor science and technology, 2013-03, Vol.28 (3), p.35009

2013

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980-nm DBR lasers using higher order gratings defined by i-line lithography

Semiconductor science and technology, 2005-11, Vol.20 (11), p.1149-1152

2005

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Frequency doubling of a passively mode-locked monolithic distributed Bragg reflector diode laser

Applied optics (2004), 2014-05, Vol.53 (15), p.3262

2014

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High power laser pulses with voltage controlled durations of 400 - 1000 ps

Optics express, 2012-03, Vol.20 (7), p.7002-7007

2012

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Near room temperature electrical injection lasing for dilute nitride Ga(NASP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy

Electronics letters, 2006-05, Vol.42 (10), p.601-603

2006

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Picosecond pulses with 50 W peak power and reduced ASE background from an all-semiconductor MOPA system

Applied physics. B, Lasers and optics, 2011-06, Vol.103 (3), p.603-607

2011

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The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications

2020 Device Research Conference (DRC), 2020, p.1-2

2020

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New Two-Color Laser Concepts for THz Generation

IEEE journal of selected topics in quantum electronics, 2008-03, Vol.14 (2), p.270-276

2008

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Modelocked semiconductor laser system with pulse picking for variable repetition rate

Electronics letters, 2011-12, Vol.47 (25), p.1387-1388

2011

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Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers

Repetition rate control of optical self-injected passively mode-locked quantum-well lasers: experiment and simulation

Compact high-current diode laser nanosecond-pulse source with high efficiency and 13 mu J output energy

Vertical GaN MISFET for chip-on-chip high speed laser driving applications

Mode-locked diode laser-based two-photon polymerisation

Properties and fabrication of high-order Bragg gratings for wavelength stabilization of diode lasers

High-power 980-nm DFB RW lasers with a narrow vertical far field

Asynchronous sampling terahertz time-domain spectroscopy using semiconductor lasers

High-Power 980-nm Broad-Area Lasers Spectrally Stabilized by Surface Bragg Gratings

Generation of spectrally stable continuous-wave emission and ns pulses with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

Electro-optical characteristics of 808 nm ridge-waveguide lasers operated with high-current nanosecond pulses

High peak power pulses from dispersion optimised modelocked semiconductor laser

Compact high-current diode laser nanosecond-pulse source with high efficiency and 13 µJ output energy

High-Power Monolithic Two-Mode DFB Laser Diodes for the Generation of THz Radiation

Dynamics of a gain-switched distributed feedback ridge waveguide laser in nanoseconds time scale under very high current injection conditions

24-wavelength distributed Bragg reflector laser array with surface gratings

Y-branch coupled DFB-lasers based on high-order Bragg gratings for wavelength stabilization

980-nm DBR lasers using higher order gratings defined by i-line lithography

Frequency doubling of a passively mode-locked monolithic distributed Bragg reflector diode laser

High power laser pulses with voltage controlled durations of 400 - 1000 ps

Near room temperature electrical injection lasing for dilute nitride Ga(NASP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy

Picosecond pulses with 50 W peak power and reduced ASE background from an all-semiconductor MOPA system

The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications

New Two-Color Laser Concepts for THz Generation

Modelocked semiconductor laser system with pulse picking for variable repetition rate

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