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OC-48 capable InGaAsN vertical cavity lasers

Electronics letters, 2001-03, Vol.37 (6), p.355-356

2001

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Surface lifetimes of Ga and growth behavior on GaN (0001) surfaces during molecular beam epitaxy

Applied physics letters, 1996-11, Vol.69 (19), p.2879-2881

1996

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Time-resolved X-ray scattering studies of layer-by-layer epitaxial growth

Physical review letters, 1992-11, Vol.69 (19), p.2791-2794

1992

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Hybrid organic–inorganic semiconductor-based light-emitting diodes

Journal of applied physics, 1997-10, Vol.82 (8), p.4126-4128

1997

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Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation

Applied physics letters, 1996-02, Vol.68 (7), p.906-908

1996

Volltextzugriff (PDF)

Optical characterization of surfaces during epitaxial growth using RDS and GIXS

Journal of crystal growth, 1996-05, Vol.163 (1), p.67-77

1996

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Atomic nature of organometallic-vapor-phase-epitaxial growth

Physical review letters, 1989-11, Vol.63 (21), p.2389-2392

1989

Volltextzugriff (PDF)

Atomic scale studies of epitaxial growth processes using X-ray techniques

Journal of crystal growth, 1996-05, Vol.163 (1), p.54-59

1996

Volltextzugriff (PDF)

Gallium arsenide surface reconstructions during organometallic vapor-phase epitaxy

Applied physics letters, 1992-05, Vol.60 (21), p.2610-2612

1992

Volltextzugriff (PDF)

X-ray analysis of GaAs surface reconstructions in H2 and N2 atmospheres

Applied physics letters, 1990-05, Vol.56 (20), p.2025-2027

1990

Volltextzugriff (PDF)

Characterization of vapor phase growth using X-ray techniques

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.104-111

1995

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Issues in the OMVPE growth of II–VI alloys for optoelectronics

Journal of crystal growth, 1989-11, Vol.98 (1), p.127-139

Kisker, D.W.

1989

Volltextzugriff (PDF)

Influence of Ga-As-Te interfacial phases on the orientation of epitaxial CdTe on GaAs

Applied physics letters, 1986-01, Vol.48 (3), p.248-250

1986

Volltextzugriff (PDF)

Tapered Fabry-Perot waveguide optical demultiplexer

IEEE photonics technology letters, 1993-09, Vol.5 (9), p.1082-1085

1993

Volltextzugriff (PDF)

GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy

Applied physics letters, 1986-02, Vol.48 (6), p.419-421

1986

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Intrinsic and extrinsic photoluminescence spectra of ZnTe films on GaAs deposited by molecular-beam and organo-metallic vapor-phase epitaxy

Journal of applied physics, 1988-09, Vol.64 (6), p.3210-3214

1988

Volltextzugriff (PDF)

Efficient generation of 480 fs electrical pulses on transmission lines by photoconductive switching in metalorganic chemical vapor deposited CdTe

Applied physics letters, 1989-01, Vol.54 (1), p.57-59

1989

Volltextzugriff (PDF)

Wavelength sensitive tapered coupler with anti-resonant waveguides

IEEE photonics technology letters, 1994-10, Vol.6 (10), p.1225-1227

1994

Volltextzugriff (PDF)

Infrared Vertical-Cavity Surface-Emitting Lasers: An Industrial Perspective

MRS bulletin, 2002-07, Vol.27 (7), p.512-519

2002

Volltextzugriff (PDF)

Estimation of solid-vapor distribution coefficients in organometallic vapor phase epitaxy of II–VI semiconductors

Journal of crystal growth, 1988-07, Vol.89 (4), p.378-390

1988

Volltextzugriff (PDF)

Photon assisted OMVPE growth of CdTe

Journal of crystal growth, 1985-01, Vol.72 (1), p.102-107

1985

Volltextzugriff (PDF)

Investigation of the relationship between reflectance difference spectroscopy and surface structure using grazing incidence X-ray scattering

Physica status solidi. A, Applied research, 1995-11, Vol.152 (1), p.9-21

1995

Volltextzugriff (PDF)

Spatially resolved derivative spectroscopy of vertical-cavity surface-emitting lasers using near-field scanning optical microscopy

Applied physics letters, 2002-02, Vol.80 (6), p.929-931

2002

Volltextzugriff (PDF)

Atomic scale characterization of organometallic vapor phase epitaxial growth using in-situ grazing incidence X-ray scattering

Journal of crystal growth, 1992-11, Vol.124 (1), p.1-9

1992

Volltextzugriff (PDF)

Luminescence study of C, Zn, Si, and Ge acceptors in GaAs

Journal of applied physics, 1983-03, Vol.54 (3), p.1332-1336

1983

Volltextzugriff (PDF)

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OC-48 capable InGaAsN vertical cavity lasers

Surface lifetimes of Ga and growth behavior on GaN (0001) surfaces during molecular beam epitaxy

Time-resolved X-ray scattering studies of layer-by-layer epitaxial growth

Hybrid organic–inorganic semiconductor-based light-emitting diodes

Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation

Optical characterization of surfaces during epitaxial growth using RDS and GIXS

Atomic nature of organometallic-vapor-phase-epitaxial growth

Atomic scale studies of epitaxial growth processes using X-ray techniques

Gallium arsenide surface reconstructions during organometallic vapor-phase epitaxy

X-ray analysis of GaAs surface reconstructions in H2 and N2 atmospheres

Characterization of vapor phase growth using X-ray techniques

Issues in the OMVPE growth of II–VI alloys for optoelectronics

Influence of Ga-As-Te interfacial phases on the orientation of epitaxial CdTe on GaAs

Tapered Fabry-Perot waveguide optical demultiplexer

GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy

Intrinsic and extrinsic photoluminescence spectra of ZnTe films on GaAs deposited by molecular-beam and organo-metallic vapor-phase epitaxy

Efficient generation of 480 fs electrical pulses on transmission lines by photoconductive switching in metalorganic chemical vapor deposited CdTe

Wavelength sensitive tapered coupler with anti-resonant waveguides

Infrared Vertical-Cavity Surface-Emitting Lasers: An Industrial Perspective

Estimation of solid-vapor distribution coefficients in organometallic vapor phase epitaxy of II–VI semiconductors

Photon assisted OMVPE growth of CdTe

Investigation of the relationship between reflectance difference spectroscopy and surface structure using grazing incidence X-ray scattering

Spatially resolved derivative spectroscopy of vertical-cavity surface-emitting lasers using near-field scanning optical microscopy

Atomic scale characterization of organometallic vapor phase epitaxial growth using in-situ grazing incidence X-ray scattering

Luminescence study of C, Zn, Si, and Ge acceptors in GaAs

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