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Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit

IEEE electron device letters, 2014-03, Vol.35 (3), p.402-404

2014

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MoS2 Field-Effect Transistors With Graphene/Metal Heterocontacts

IEEE electron device letters, 2014-05, Vol.35 (5), p.599-601

2014

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STLM: A Sidewall TLM Structure for Accurate Extraction of Ultralow Specific Contact Resistivity

IEEE electron device letters, 2013-09, Vol.34 (9), p.1082-1084

2013

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Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities

IEEE electron device letters, 2012-03, Vol.33 (3), p.351-353

2012

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Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3197-3203

2013

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on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained \hbox\hbox Quantum-Well pMOSFET Along \langle \hbox \rangle and \langle \hbox \rangle Channel Directions

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.985-995

2011

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Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

IEEE electron device letters, 2009-03, Vol.30 (3), p.285-287

2009

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High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility

IEICE transactions on electronics, 2011, Vol.E94-C (5), p.712-716

2011

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Field-Effect Transistors With Graphene/Metal Heterocontacts

IEEE electron device letters, 2014-05, Vol.35 (5), p.599-601

2014

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Mapping Defect Density in MBE Grown Epitaxial Layers on Si Substrate Using Esaki Diode Valley Characteristics

IEEE transactions on electron devices, 2014-06, Vol.61 (6), p.2049-2055

2014

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Improved ge surface passivation with ultrathin SiOx enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack

IEEE electron device letters, 2007-04, Vol.28 (4), p.308-311

2007

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Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.2917-2923

2011

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Highly manufacturable advanced gate-stack technology for sub-45-nm self-aligned gate-first CMOSFETs

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.979-989

2006

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Improved 20nm device yield and gate dielectric integrity with optimized aluminum metal fill process

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2016, p.308-312

2016

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The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of HfO2 MOSFET Devices

IEEE electron device letters, 2008, Vol.29 (1), p.54-56

2008

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The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of \hbox MOSFET Devices

IEEE electron device letters, 2008-01, Vol.29 (1), p.54-56

2008

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Atomic Layer Deposition of High k Dielectric and Metal Gate Stacks for MOS Devices

AIP conference proceedings, 2005-09, Vol.788 (1)

2005

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KaleidaGraph: Graphing and Data Analysis. Version 3.5 for Windows Synergy Software, 2457 Perkiomen Ave., Reading, PA 19606-2049. www.Synergy.com. $155.00

Journal of the American Chemical Society, 2000-11, Vol.122 (47), p.11755-11755

2000

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Process driven oxygen redistribution and control in Si 0.7 Ge 0.3 /HfO 2 /TaN gate stack film systems

Journal of applied physics, 2011-10, Vol.110 (8), p.084107-084107-8

2011

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Process driven oxygen redistribution and control in Si0.7Ge0.3/HfO2/TaN gate stack film systems

Journal of applied physics, 2011-10, Vol.110 (8)

2011

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Characteristics of a band edge p-channel metal-oxide-semiconductor field effect transistors fabricated with a high-k /WAlx/TiSiN gate stack

Applied physics letters, 2010-07, Vol.97 (2)

2010

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Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology : GaN ELECTRONIC DEVICES

IEEE transactions on electron devices, 2013, Vol.60 (10), p.3197-3203

2013

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Contact resistance improvement by dielectric breakdown in semiconductor-dielectric-metal contact

Applied physics letters, 2013-03, Vol.102 (11)

2013

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Characteristics of a band edge p-channel metal-oxide-semiconductor field effect transistors fabricated with a high-k / WAl x /TiSiN gate stack

Applied physics letters, 2010-07, Vol.97 (2), p.023501-023501-3

2010

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In 0.7 Ga 0.3 As quantum well MOSFETs with Al 2 O 3 /HfO 2 toward subthreshold swing of ∼60 mV/dec

Applied physics express, 2014-07, Vol.7 (7), p.74201

2014

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Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit

MoS2 Field-Effect Transistors With Graphene/Metal Heterocontacts

STLM: A Sidewall TLM Structure for Accurate Extraction of Ultralow Specific Contact Resistivity

Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities

Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained \hbox\hbox Quantum-Well pMOSFET Along \langle \hbox \rangle and \langle \hbox \rangle Channel Directions

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility

Field-Effect Transistors With Graphene/Metal Heterocontacts

Mapping Defect Density in MBE Grown Epitaxial Layers on Si Substrate Using Esaki Diode Valley Characteristics

Improved ge surface passivation with ultrathin SiOx enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack

Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate

Highly manufacturable advanced gate-stack technology for sub-45-nm self-aligned gate-first CMOSFETs

Improved 20nm device yield and gate dielectric integrity with optimized aluminum metal fill process

The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of HfO2 MOSFET Devices

The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of \hbox MOSFET Devices

Atomic Layer Deposition of High k Dielectric and Metal Gate Stacks for MOS Devices

KaleidaGraph: Graphing and Data Analysis. Version 3.5 for Windows Synergy Software, 2457 Perkiomen Ave., Reading, PA 19606-2049. www.Synergy.com. $155.00

Process driven oxygen redistribution and control in Si 0.7 Ge 0.3 /HfO 2 /TaN gate stack film systems

Process driven oxygen redistribution and control in Si0.7Ge0.3/HfO2/TaN gate stack film systems

Characteristics of a band edge p-channel metal-oxide-semiconductor field effect transistors fabricated with a high-k /WAlx/TiSiN gate stack

Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology : GaN ELECTRONIC DEVICES

Contact resistance improvement by dielectric breakdown in semiconductor-dielectric-metal contact

Characteristics of a band edge p-channel metal-oxide-semiconductor field effect transistors fabricated with a high-k / WAl x /TiSiN gate stack

In 0.7 Ga 0.3 As quantum well MOSFETs with Al 2 O 3 /HfO 2 toward subthreshold swing of ∼60 mV/dec

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