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Scaling of poly-encapsulated LOCOS for 0.35 μm CMOS technology

IEEE transactions on electron devices, 1994, Vol.41 (1), p.56-62

1994

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Polysilicon encapsulated local oxidation

IEEE electron device letters, 1991-03, Vol.12 (3), p.92-94

1991

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An ultra-shallow buried-channel PMOST using boron penetration

IEEE transactions on electron devices, 1993-01, Vol.40 (1), p.207-213

1993

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PELOX integrated PBL

IEEE transactions on semiconductor manufacturing, 1993-08, Vol.6 (3), p.246-250

1993

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The SCC BJT: a high-performance bipolar transistor compatible with high-density deep-submicrometer BiCMOS SRAM technologies

IEEE transactions on electron devices, 1995-07, Vol.42 (7), p.1277-1286

1995

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Offset Trench Isolation

Journal of the Electrochemical Society, 1994-08, Vol.141 (8), p.2178-2181

1994

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Characterization of polysilicon-encapsulated local oxidation

IEEE transactions on electron devices, 1992-05, Vol.39 (5), p.1085-1089

1992

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Lectures on Shakespeare

1, 2019

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Heat Capacity Measurements on Small Samples at Low Temperatures

Review of scientific instruments, 1972-02, Vol.43 (2), p.205-214

1972

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Process limitation and device design tradeoffs of self-aligned TiSi2 junction formation in submicrometer CMOS devices

IEEE transactions on electron devices, 1991-02, Vol.38 (2), p.246-254

1991

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Anomalous C-V characteristics of implanted poly MOS structure in n+/p+ dual-gate CMOS technology

IEEE electron device letters, 1989-05, Vol.10 (5), p.192-194

1989

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Low Temperature Silicon Thermometer and Bolometer

Review of scientific instruments, 1970-04, Vol.41 (4), p.547-549

1970

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High-performance salicide shallow-junction CMOS devices for submicrometer VLSI application in twin-tub VI

IEEE transactions on electron devices, 1989-11, Vol.36 (11), p.2530-2536

1989

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Recessed polysilicon encapsulated local oxidation

IEEE electron device letters, 1991-10, Vol.12 (10), p.515-517

1991

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A new toroidal TFT structure for future generation SRAMs

IEEE International Electron Devices Meeting, 1993, 1993, p.825-828

1993

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The low temperature heat capacity and electrical resistivity of ReO3

Solid state communications, 1971-06, Vol.9 (12), p.907-910

1971

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Process limitation and device design tradeoffs of self-aligned TiSi(2) junction formation in submicrometer CMOS devices

IEEE transactions on electron devices, 1991-02, Vol.38 (2), p.246-254

1991

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Process limitation and device design tradeoffs of self-aligned TiSi sub(2) junction formation in submicrometer CMOS devices

IEEE transactions on electron devices, 1991-01, Vol.38 (2), p.246-254

1991

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High-performance silicide shallow-junction CMOS devices for submicrometer VLSI application in twin-tub VI

IEEE transactions on electron devices, 1989-01, Vol.36 (11), p.2530-2536

1989

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Anomalous < e1 > C < /e1 > - < e1 > V < /e1 > characteristics of implanted polyMOS structure in n(+)/p(+) dual-gate CMOS technology

IEEE electron device letters, 1989-05, Vol.10 (5), p.192-194

1989

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WILLIAM MORRIS: A MAN AGAINST TIME [WILLIAM MORRIS: EIN MANN GEGEN DIE ZEIT]

Illumina ARTbibliographies Modern - unstructured, 1983

KIRSCH, H -C

1983

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Anomalous C-V characteristics of implanted poly MOS structure in n super(+)/p super(+) dual-gate CMOS technology

IEEE electron device letters, 1989-01, Vol.10 (5), p.192-194

1989

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A high-performance low-complexity bipolar technology using selective collector compensation

1992 International Technical Digest on Electron Devices Meeting, 1992, p.405-408

1992

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A high-performance quadruple well, quadruple poly BiCMOS process for fast 16 Mb SRAMs

1992 International Technical Digest on Electron Devices Meeting, 1992, p.819-822

1992

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A complementary role of multiparameter flow cytometry and high-throughput sequencing for minimal residual disease detection in chronic lymphocytic leukemia: an European Research Initiative on CLL study

Leukemia, 2016-04, Vol.30 (4), p.929-936

2016

Volltextzugriff (PDF)

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Scaling of poly-encapsulated LOCOS for 0.35 μm CMOS technology

Polysilicon encapsulated local oxidation

An ultra-shallow buried-channel PMOST using boron penetration

PELOX integrated PBL

The SCC BJT: a high-performance bipolar transistor compatible with high-density deep-submicrometer BiCMOS SRAM technologies

Offset Trench Isolation

Characterization of polysilicon-encapsulated local oxidation

Lectures on Shakespeare

Heat Capacity Measurements on Small Samples at Low Temperatures

Process limitation and device design tradeoffs of self-aligned TiSi2 junction formation in submicrometer CMOS devices

Anomalous C-V characteristics of implanted poly MOS structure in n+/p+ dual-gate CMOS technology

Low Temperature Silicon Thermometer and Bolometer

High-performance salicide shallow-junction CMOS devices for submicrometer VLSI application in twin-tub VI

Recessed polysilicon encapsulated local oxidation

A new toroidal TFT structure for future generation SRAMs

The low temperature heat capacity and electrical resistivity of ReO3

Process limitation and device design tradeoffs of self-aligned TiSi(2) junction formation in submicrometer CMOS devices

Process limitation and device design tradeoffs of self-aligned TiSi sub(2) junction formation in submicrometer CMOS devices

High-performance silicide shallow-junction CMOS devices for submicrometer VLSI application in twin-tub VI

Anomalous < e1 > C < /e1 > - < e1 > V < /e1 > characteristics of implanted polyMOS structure in n(+)/p(+) dual-gate CMOS technology

WILLIAM MORRIS: A MAN AGAINST TIME [WILLIAM MORRIS: EIN MANN GEGEN DIE ZEIT]

Anomalous C-V characteristics of implanted poly MOS structure in n super(+)/p super(+) dual-gate CMOS technology

A high-performance low-complexity bipolar technology using selective collector compensation

A high-performance quadruple well, quadruple poly BiCMOS process for fast 16 Mb SRAMs

A complementary role of multiparameter flow cytometry and high-throughput sequencing for minimal residual disease detection in chronic lymphocytic leukemia: an European Research Initiative on CLL study

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