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Editorial Special Issue on Dielectrics for 2-D Electronics

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1451-1453

2023

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Analysis and Simulation of Interface Quality and Defect Induced Variability in MgO Spin-Transfer Torque Magnetic RAMs

IEEE electron device letters, 2021-01, Vol.42 (1), p.34-37

2021

Volltextzugriff (PDF)

Intrinsic nanofilamentation in resistive switching

Journal of applied physics, 2013-03, Vol.113 (11)

2013

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A Compact Model for Undoped Silicon-Nanowire MOSFETs With Schottky-Barrier Source/Drain

IEEE transactions on electron devices, 2009-05, Vol.56 (5), p.1100-1109

2009

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Influence of Bosch Etch Process on Electrical Isolation of TSV Structures

IEEE transactions on components, packaging, and manufacturing technology (2011), 2011-10, Vol.1 (10), p.1497-1507

2011

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Recommended Methods to Study Resistive Switching Devices

Advanced electronic materials, 2019-01, Vol.5 (1), p.n/a

2019

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Experimental and Theoretical Investigation of Intracell Magnetic Coupling-Induced Variability of Spin-Transfer Torque Magnetic RAMs

IEEE transactions on electron devices, 2023-10, Vol.70 (10), p.1-7

2023

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Impact of Voltage Polarity on Time-Dependent Dielectric Breakdown of 1-nm MgO-Based STT-MRAM With Self-Heating Correction

IEEE transactions on electron devices, 2023-01, Vol.70 (1), p.1-7

2023

Volltextzugriff (PDF)

Dielectric breakdown of 2D muscovite mica

Scientific reports, 2022-08, Vol.12 (1), p.14076-14076, Article 14076

2022

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Identifying the First Layer to Fail in Dual-Layer SiOx/HfSiON Gate Dielectric Stacks

IEEE electron device letters, 2013-10, Vol.34 (10), p.1289-1291

2013

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Dielectric breakdown mechanisms in gate oxides

Journal of applied physics, 2005-12, Vol.98 (12), p.121301-121301-36

2005

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Schottky-Ohmic transition in metal-all-around electrical contacts to silicon nanowires

Journal of applied physics, 2009-05, Vol.105 (9), p.094508-094508-7

2009

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Demonstration of Schottky Barrier NMOS Transistors With Erbium Silicided Source/Drain and Silicon Nanowire Channel

IEEE electron device letters, 2008-10, Vol.29 (10), p.1167-1170

2008

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Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature

Materials science in semiconductor processing, 2017-08, Vol.66, p.191-199

2017

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Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft Breakdown TiN/HfLaO/SiOx nMOSFETs

IEEE electron device letters, 2014-02, Vol.35 (2), p.157-159

2014

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Germanium coated vertically-aligned multiwall carbon nanotubes as lithium-ion battery anodes

Carbon (New York), 2014-10, Vol.77, p.551-559

2014

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A nanoscale analysis of the leakage current in SiO2 breakdown

Applied physics letters, 2008-07, Vol.93 (2)

2008

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Dielectric Breakdown in Single-Crystal Hexagonal Boron Nitride

ACS applied electronic materials, 2021-08, Vol.3 (8), p.3547-3554

2021

Volltextzugriff (PDF)

Assessment of read disturb immunity in conducting bridge memory devices – A thermodynamic perspective

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2295-2299

2014

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Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics

Microelectronic engineering, 2013-09, Vol.109, p.364-369

2013

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Feasibility of SILC Recovery in Sub-10-Å EOT Advanced Metal Gate-High- \kappa Stacks

IEEE electron device letters, 2013-08, Vol.34 (8), p.1053-1055

2013

Volltextzugriff (PDF)

Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

Applied physics letters, 2011-08, Vol.99 (9), p.093502-093502-3

2011

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Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM

Microelectronic engineering, 2011-07, Vol.88 (7), p.1124-1128

2011

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Stable cyclic performance of nickel oxide–carbon composite anode for lithium-ion batteries

Thin solid films, 2014-05, Vol.558, p.356-364

2014

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Vacancy Generation by Laser Preirradiation for Junction Leakage Suppression

IEEE electron device letters, 2009-12, Vol.30 (12), p.1263-1265

2009

Volltextzugriff (PDF)

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Editorial Special Issue on Dielectrics for 2-D Electronics

Analysis and Simulation of Interface Quality and Defect Induced Variability in MgO Spin-Transfer Torque Magnetic RAMs

Intrinsic nanofilamentation in resistive switching

A Compact Model for Undoped Silicon-Nanowire MOSFETs With Schottky-Barrier Source/Drain

Influence of Bosch Etch Process on Electrical Isolation of TSV Structures

Recommended Methods to Study Resistive Switching Devices

Experimental and Theoretical Investigation of Intracell Magnetic Coupling-Induced Variability of Spin-Transfer Torque Magnetic RAMs

Impact of Voltage Polarity on Time-Dependent Dielectric Breakdown of 1-nm MgO-Based STT-MRAM With Self-Heating Correction

Dielectric breakdown of 2D muscovite mica

Identifying the First Layer to Fail in Dual-Layer SiOx/HfSiON Gate Dielectric Stacks

Dielectric breakdown mechanisms in gate oxides

Schottky-Ohmic transition in metal-all-around electrical contacts to silicon nanowires

Demonstration of Schottky Barrier NMOS Transistors With Erbium Silicided Source/Drain and Silicon Nanowire Channel

Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature

Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft Breakdown TiN/HfLaO/SiOx nMOSFETs

Germanium coated vertically-aligned multiwall carbon nanotubes as lithium-ion battery anodes

A nanoscale analysis of the leakage current in SiO2 breakdown

Dielectric Breakdown in Single-Crystal Hexagonal Boron Nitride

Assessment of read disturb immunity in conducting bridge memory devices – A thermodynamic perspective

Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics

Feasibility of SILC Recovery in Sub-10-Å EOT Advanced Metal Gate-High- \kappa Stacks

Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM

Stable cyclic performance of nickel oxide–carbon composite anode for lithium-ion batteries

Vacancy Generation by Laser Preirradiation for Junction Leakage Suppression

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