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In-Depth Studies on Rapid Photochemical Activation of Various Sol-Gel Metal Oxide Films for Flexible Transparent Electronics

Advanced functional materials, 2015-05, Vol.25 (19), p.2807-2815

2015

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Multi‐Foldable and Environmentally Stable All‐Solid‐State Supercapacitor Based on Hierarchical Nano‐Canyon Structured Ionic‐Gel Polymer Electrolyte

Advanced functional materials, 2022-03, Vol.32 (13), p.n/a

2022

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Exciton‐Dominated Ultrafast Optical Response in Atomically Thin PtSe2

Small (Weinheim an der Bergstrasse, Germany), 2021-11, Vol.17 (45), p.e2103400-n/a

2021

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Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes

Scientific reports, 2019-01, Vol.9 (1), p.970-970, Article 970

2019

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Inverted n–p junction 940‐nm vertical‐cavity surface‐emitting laser arrays consisting of 875 devices on p‐GaAs substrate

Electronics letters, 2024-05, Vol.60 (9), p.n/a

2024

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Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors

ACS applied materials & interfaces, 2016-04, Vol.8 (16), p.10403-10412

2016

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Highly-sensitive solution-processed 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) phototransistors for optical sensing applications

Organic electronics, 2014-09, Vol.15 (9), p.2099-2106

2014

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Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells

Optics express, 2014-05, Vol.22 Suppl 3 (S3), p.A857-A866

2014

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Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes

IEEE electron device letters, 2013-11, Vol.34 (11), p.1409-1411

2013

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One-volt oxide based complementary circuit

AIP advances, 2024-07, Vol.14 (7), p.075205-075205-5

2024

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In-Situ Metallic Oxide Capping for High Mobility Solution-Processed Metal-Oxide TFTs

IEEE electron device letters, 2014-08, Vol.35 (8), p.850-852

2014

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Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide

Advanced electronic materials, 2023-03, Vol.9 (3), p.n/a

2023

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Selective-Area Growth Mechanism of GaN Microrods on a Plateau Patterned Substrate

Materials, 2023-03, Vol.16 (6), p.2462

2023

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Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si (111) substrate

Journal of applied physics, 2013-07, Vol.114 (1)

2013

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Programmed Assembly of DNA-Coated Nanowire Devices

Science (American Association for the Advancement of Science), 2009-01, Vol.323 (5912), p.352-352

2009

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Large-Scale Organic Single-Crystal Thin Films and Transistor Arrays via the Evaporation-Controlled Fluidic Channel Method

ACS applied materials & interfaces, 2014-05, Vol.6 (10), p.7133-7140

2014

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Static and Dynamic Water Motion-Induced Instability in Oxide Thin-Film Transistors and Its Suppression by Using Low‑k Fluoropolymer Passivation

ACS applied materials & interfaces, 2017-08, Vol.9 (31), p.26161-26168

2017

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Monolithic Integration and Design of Solution-Processed Metal-Oxide Circuitry in Organic Photosensor Arrays

IEEE electron device letters, 2016-05, Vol.37 (5), p.671-673

2016

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Electrical Transport and Chemical Sensing Properties of Individual Conducting Polymer Nanowires

Nano letters, 2008-12, Vol.8 (12), p.4653-4658

2008

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Photochemically Activated Flexible Metal-Oxide Transistors and Circuits Using Low Impurity Aqueous System

IEEE electron device letters, 2015-02, Vol.36 (2), p.162-164

2015

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Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate

Nanomaterials (Basel, Switzerland), 2018-07, Vol.8 (7), p.543

2018

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Investigation of Reverse Leakage Characteristics of InGaN/GaN Light-Emitting Diodes on Silicon

IEEE electron device letters, 2012-12, Vol.33 (12), p.1741-1743

2012

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Precise Placement of Metallic Nanowires on a Substrate by Localized Electric Fields and Inter-Nanowire Electrostatic Interaction

Nanomaterials (Basel, Switzerland), 2017-10, Vol.7 (10), p.335

2017

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Quantum efficiency affected by localized carrier distribution near the V-defect in GaN based quantum well

Applied physics letters, 2013-12, Vol.103 (26)

2013

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Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Materials, 2015-10, Vol.8 (10), p.6926-6934

2015

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In-Depth Studies on Rapid Photochemical Activation of Various Sol-Gel Metal Oxide Films for Flexible Transparent Electronics

Multi‐Foldable and Environmentally Stable All‐Solid‐State Supercapacitor Based on Hierarchical Nano‐Canyon Structured Ionic‐Gel Polymer Electrolyte

Exciton‐Dominated Ultrafast Optical Response in Atomically Thin PtSe2

Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes

Inverted n–p junction 940‐nm vertical‐cavity surface‐emitting laser arrays consisting of 875 devices on p‐GaAs substrate

Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors

Highly-sensitive solution-processed 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) phototransistors for optical sensing applications

Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells

Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes

One-volt oxide based complementary circuit

In-Situ Metallic Oxide Capping for High Mobility Solution-Processed Metal-Oxide TFTs

Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide

Selective-Area Growth Mechanism of GaN Microrods on a Plateau Patterned Substrate

Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si (111) substrate

Programmed Assembly of DNA-Coated Nanowire Devices

Large-Scale Organic Single-Crystal Thin Films and Transistor Arrays via the Evaporation-Controlled Fluidic Channel Method

Static and Dynamic Water Motion-Induced Instability in Oxide Thin-Film Transistors and Its Suppression by Using Low‑k Fluoropolymer Passivation

Monolithic Integration and Design of Solution-Processed Metal-Oxide Circuitry in Organic Photosensor Arrays

Electrical Transport and Chemical Sensing Properties of Individual Conducting Polymer Nanowires

Photochemically Activated Flexible Metal-Oxide Transistors and Circuits Using Low Impurity Aqueous System

Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate

Investigation of Reverse Leakage Characteristics of InGaN/GaN Light-Emitting Diodes on Silicon

Precise Placement of Metallic Nanowires on a Substrate by Localized Electric Fields and Inter-Nanowire Electrostatic Interaction

Quantum efficiency affected by localized carrier distribution near the V-defect in GaN based quantum well

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

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