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Aerotolerance and multilocus sequence typing among Campylobacter jejuni strains isolated from humans, broiler chickens, and cattle in Miyazaki Prefecture, Japan

Journal of Veterinary Medical Science, 2019, Vol.81(8), pp.1144-1151

2019

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Effect of morphological changes in feather follicles of chicken carcasses after defeathering and chilling on the degree of skin contamination by Campylobacter species

Journal of Veterinary Medical Science, 2018, Vol.80(1), pp.49-54

2018

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Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structure

Journal of materials science, 2001-12, Vol.36 (23), p.5705-5712

2001

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Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2

Journal of materials science, 2002-05, Vol.37 (10), p.1941-1949

2002

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A 1-Year Investigation of Extended-Spectrum Beta-Lactamase-Producing Escherichia coli and Klebsiella pneumoniae Isolated from Bovine Mastitis at a Large-Scale Dairy Farm in Japan

Microbial drug resistance (Larchmont, N.Y.), 2021-10, Vol.27 (10), p.1450-1454

2021

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Aerotolerance and multilocus sequence typing among Campylobacter jejuni strains isolated from humans, broiler chickens, and cattle in Miyazaki Prefecture, Japan

Journal of Veterinary Medical Science, 2019, pp.19-0228

2019

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The impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO2/Si multilayer structure

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-07, Vol.84 (3), p.217-223

2001

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Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide

Journal of materials science, 2001-12, Vol.36 (24), p.5845-5851

2001

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Properties of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-06, Vol.83 (1-3), p.1-7

2001

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Study on electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure

Journal of materials science, 2001-11, Vol.36 (22), p.5475-5480

2001

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Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO2

Materials science in semiconductor processing, 2000-06, Vol.3 (3), p.179-184

2000

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Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-03, Vol.90 (1-2), p.25-33

2002

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Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-09, Vol.77 (3), p.282-287

2000

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Interfacial reactions and failure mechanism of Cu/Ta/SiO 2/Si multilayer structure in thermal annealing

Materials science & engineering. B, Solid-state materials for advanced technology, 2002, Vol.94 (1), p.111-120

2002

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Interfacial reactions and failure mechanism of Cu/Ta/SiO2/Si multilayer structure in thermal annealing

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-06, Vol.94 (1), p.111-120

2002

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Properties of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO 2/Si multilayer structure

Materials science & engineering. B, Solid-state materials for advanced technology, 2001, Vol.83 (1), p.1-7

2001

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Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO sub(2)

Journal of materials science, 2002-05, Vol.37 (10), p.1941-1949

2002

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Effect of the silicon nitride passivation layer on the Cu/Ta/SiO 2/Si multi-layer structure

Materials science & engineering. B, Solid-state materials for advanced technology, 2002, Vol.90 (1), p.25-33

2002

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Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO sub(2)Si structure

Journal of materials science, 2000-12, Vol.35 (23), p.5857-5860

2000

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Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wtCu/Ti/SiO2/Si structure

Journal of materials science, 2000-12, Vol.35 (23), p.5857-5860

2000

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The impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO 2/Si multilayer structure

Materials science & engineering. B, Solid-state materials for advanced technology, 2001, Vol.84 (3), p.217-223

2001

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Effect of heat transfer on the C49–C54 phase transformation in TiSi 2 thin film

Materials science in semiconductor processing, 1999, Vol.2 (4), p.329-333

1999

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Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO 2

Materials science & engineering. B, Solid-state materials for advanced technology, 2000, Vol.77 (3), p.282-287

2000

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Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO 2

Materials science in semiconductor processing, 2000, Vol.3 (3), p.179-184

2000

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Study of diffusion barrier properties of ternary alloy (Ti xAl yN z) in Cu/Ti xAl yN z/SiO 2/Si thin film structure

Materials science in semiconductor processing, 2000, Vol.3 (3), p.191-194

2000

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Aerotolerance and multilocus sequence typing among Campylobacter jejuni strains isolated from humans, broiler chickens, and cattle in Miyazaki Prefecture, Japan

Effect of morphological changes in feather follicles of chicken carcasses after defeathering and chilling on the degree of skin contamination by Campylobacter species

Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structure

Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2

A 1-Year Investigation of Extended-Spectrum Beta-Lactamase-Producing Escherichia coli and Klebsiella pneumoniae Isolated from Bovine Mastitis at a Large-Scale Dairy Farm in Japan

Aerotolerance and multilocus sequence typing among Campylobacter jejuni strains isolated from humans, broiler chickens, and cattle in Miyazaki Prefecture, Japan

The impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO2/Si multilayer structure

Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide

Properties of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure

Study on electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure

Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO2

Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure

Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2

Interfacial reactions and failure mechanism of Cu/Ta/SiO 2/Si multilayer structure in thermal annealing

Interfacial reactions and failure mechanism of Cu/Ta/SiO2/Si multilayer structure in thermal annealing

Properties of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO 2/Si multilayer structure

Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO sub(2)

Effect of the silicon nitride passivation layer on the Cu/Ta/SiO 2/Si multi-layer structure

Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO sub(2)Si structure

Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wtCu/Ti/SiO2/Si structure

The impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO 2/Si multilayer structure

Effect of heat transfer on the C49–C54 phase transformation in TiSi 2 thin film

Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO 2

Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO 2

Study of diffusion barrier properties of ternary alloy (Ti xAl yN z) in Cu/Ti xAl yN z/SiO 2/Si thin film structure

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