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Infrared spectroscopy of polycrystalline ZnO and ZnO:N thin films

Journal of crystal growth, 2005-08, Vol.281 (2), p.297-302

2005

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Time-resolved photoluminescence studies of CdTe solar cells

Journal of applied physics, 2003-09, Vol.94 (5), p.3549-3555

2003

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Combinatorial studies of Zn-Al-O and Zn-Sn-O transparent conducting oxide thin films

Thin solid films, 2002-05, Vol.411 (1), p.152-160

2002

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Photocurrent of 1 eV GaInNAs lattice-matched to GaAs

Journal of crystal growth, 1998-01, Vol.195 (1), p.401-408

1998

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High-mobility transparent conducting Mo-doped In2O3 thin films by pulsed laser deposition

Journal of applied physics, 2004-04, Vol.95 (7), p.3831-3833

2004

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Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates

Applied physics letters, 2004-05, Vol.84 (18), p.3447-3449

2004

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Unintentional carbon and hydrogen incorporation in GaNP grown by metal-organic chemical vapor deposition

Journal of crystal growth, 2003-12, Vol.259 (3), p.223-231

2003

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Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

Applied physics letters, 2000-04, Vol.76 (14), p.1884-1886

2000

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Optical analysis of thin film combinatorial libraries

Applied surface science, 2004-02, Vol.223 (1), p.124-132

2004

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High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates

Applied physics letters, 1998-11, Vol.73 (21), p.3111-3113

1998

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Characterization survey of GaxIn1-xAs/InAsyP1-y double heterostructures and InAsyP1-y multilayers grown on InP

Journal of electronic materials, 2004-03, Vol.33 (3), p.185-193

2004

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Effect of growth rate and gallium source on GaAsN

Applied physics letters, 2003-04, Vol.82 (16), p.2634-2636

2003

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Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centers

Journal of applied physics, 1991-07, Vol.70 (1), p.225-231

1991

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Characterization of light element impurities in gallium-nitride-phosphide by SIMS analysis

Applied surface science, 2004-06, Vol.231, p.808-812

2004

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Combinatorial study of reactively sputtered Cr–Ti–N

Applied surface science, 2004-02, Vol.223 (1), p.253-258

2004

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The Remarkable Thermal Stability of Amorphous In-Zn-O Transparent Conductors

Advanced functional materials, 2008-10, Vol.18 (20), p.3169-3178

2008

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Transport properties of GaAs1−xNx thin films grown by metalorganic chemical vapor deposition

Applied physics letters, 2000-12, Vol.77 (23), p.3794-3796

2000

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Injection level lifetime spectroscopy of impurities in semiconductors

Surface engineering, 2000-02, Vol.16 (1), p.54-60

2000

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Changes in the dominant recombination mechanisms of polycrystalline Cu(In,Ga)Se2 occurring during growth

Journal of applied physics, 2003-11, Vol.94 (9), p.5584-5591

2003

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BGaInAs alloys lattice matched to GaAs

Applied physics letters, 2000-03, Vol.76 (11), p.1443-1445

2000

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High-quality eutectic-metal-bonded AlGaAs-GaAs thin films on Si substrates

Applied physics letters, 1992-02, Vol.60 (7), p.886-888

1992

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Minority-carrier lifetime and photon recycling in n -GaAs

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1992-07, Vol.10 (4), p.990-995

1992

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Minority-carrier lifetime in AlxGa1-xAs grown by molecular-beam epitaxy

Journal of applied physics, 1991-03, Vol.69 (5), p.3094-3096

1991

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Dependence of hot carrier luminescence on barrier thickness in GaAs/AlGaAs superlattices and multiple quantum wells

Solid state communications, 1990-07, Vol.75 (4), p.297-301

1990

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Zero-field time-of-flight measurements of electron diffusion in P+-GaAs

Japanese Journal of Applied Physics, 1991-02, Vol.30 (2A), p.L135-L137

1991

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Infrared spectroscopy of polycrystalline ZnO and ZnO:N thin films

Time-resolved photoluminescence studies of CdTe solar cells

Combinatorial studies of Zn-Al-O and Zn-Sn-O transparent conducting oxide thin films

Photocurrent of 1 eV GaInNAs lattice-matched to GaAs

High-mobility transparent conducting Mo-doped In2O3 thin films by pulsed laser deposition

Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates

Unintentional carbon and hydrogen incorporation in GaNP grown by metal-organic chemical vapor deposition

Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

Optical analysis of thin film combinatorial libraries

High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates

Characterization survey of GaxIn1-xAs/InAsyP1-y double heterostructures and InAsyP1-y multilayers grown on InP

Effect of growth rate and gallium source on GaAsN

Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centers

Characterization of light element impurities in gallium-nitride-phosphide by SIMS analysis

Combinatorial study of reactively sputtered Cr–Ti–N

The Remarkable Thermal Stability of Amorphous In-Zn-O Transparent Conductors

Transport properties of GaAs1−xNx thin films grown by metalorganic chemical vapor deposition

Injection level lifetime spectroscopy of impurities in semiconductors

Changes in the dominant recombination mechanisms of polycrystalline Cu(In,Ga)Se2 occurring during growth

BGaInAs alloys lattice matched to GaAs

High-quality eutectic-metal-bonded AlGaAs-GaAs thin films on Si substrates

Minority-carrier lifetime and photon recycling in n -GaAs

Minority-carrier lifetime in AlxGa1-xAs grown by molecular-beam epitaxy

Dependence of hot carrier luminescence on barrier thickness in GaAs/AlGaAs superlattices and multiple quantum wells

Zero-field time-of-flight measurements of electron diffusion in P+-GaAs

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