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Surface-stress-induced order in SiGe alloy films

Physical review letters, 1990-04, Vol.64 (17), p.2038-2041

1990

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Diffusion versus oxidation rates in silicon-germanium alloys

Applied physics letters, 1991-07, Vol.59 (1), p.78-80

1991

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Interfacial reactions and Schottky barriers of Pt and Pd on epitaxial Si1-xGex alloys

Applied physics letters, 1992-02, Vol.60 (5), p.577-579

1992

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Long-range order in thick, unstrained Si0.5Ge0.5 epitaxial layers

Physical review letters, 1990, Vol.64 (1), p.40-43

1990

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A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices

IEEE electron device letters, 1991-05, Vol.12 (5), p.246-248

1991

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Probing band structure anisotropy in quantum wells via magnetotunneling

Physical review letters, 1991-12, Vol.67 (27), p.3828-3831

1991

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Photoluminescence studies of pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs quantum wells

Applied physics letters, 1989-04, Vol.54 (17), p.1675-1677

1989

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Dependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single-barrier structures grown by molecular beam epitaxy

Applied physics letters, 1989-02, Vol.54 (6), p.549-551

1989

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Femtosecond ellipsometric study of nonequilibrium carrier dynamics in Ge and epitaxial Si1-xGex

Applied physics letters, 1993-09, Vol.63 (11), p.1507-1509

1993

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Titanium silicide/germanide formation on submicron features for high mobility SiGe channel field effect transistors

Journal of electronic materials, 1994-04, Vol.23 (4), p.413-421

1994

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Cross-sectional scanning tunneling microscopy of MBE-grown Si p-n junctions and Si/SiGe superlattices

Journal of crystal growth, 1993-02, Vol.127 (1), p.435-439

1993

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Monolithic millimetre-wave oscillator using a transmission line periodically loaded by QWITT diodes

Electronics letters, 1988-05, Vol.24 (11), p.666-667

1988

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Si/SiGe heterostructures grown on SOI substrates by MBE for integrated optoelectronics

Journal of crystal growth, 1991-05, Vol.111 (1), p.936-942

1991

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Similarities between the Landau spectra and dispersion relations in Si/Si1-xGex quantum wells investigated by magnetotunneling spectroscopy

Applied physics letters, 1993-07, Vol.63 (4), p.545-547

1993

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Cyclotron effective mass of holes in strained Si1-xGex/Si quantum well structures

Surface science, 1994-03, Vol.305 (1-3), p.275-279

1994

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Growth and rapid thermal annealing of AlGaAs/InGaAs pseudomorphic modulation-doped structures

Applied physics letters, 1988-08, Vol.53 (8), p.681-683

1988

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Dopant incorporation in epitaxial germanium grown on Ge(100) substrates by MBE

Journal of crystal growth, 1991-05, Vol.111 (1), p.847-855

1991

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A new transit-time device using quantum-well injection

IEEE electron device letters, 1987-04, Vol.8 (4), p.129-131

1987

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p-type doping of germanium grown by molecular beam epitaxy on Ge(100) substrates

Applied physics letters, 1991-08, Vol.59 (7), p.852-854

1991

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Microwave frequency operation of quantum-well injection transit time (QWITT) diode

Electronics letters, 1988, Vol.24 (24), p.1473-1474

1988

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A VLSI-compatible high-speed silicon photodetector for optical data link applications

IEEE transactions on electron devices, 1996-07, Vol.43 (7), p.1054-1060

1996

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Influence of device structure and growth conditions on the tunneling characteristics of Si/Si1-xGex double barrier structures

Journal of electronic materials, 1993-09, Vol.22 (9), p.1173-1177

1993

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Photoluminescence and electroreflectance studies of modulation-doped pseudomorphic AlGaAs/InGaAs/GaAs quantum wells

Journal of electronic materials, 1990-03, Vol.19 (3), p.265-270

1990

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Influence of MBE growth temperature on GaAs/AlAs resonant tunneling structures

Journal of electronic materials, 1989-09, Vol.18 (5), p.585-588

1989

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The influence of transit-time effects on the optimum design and maximum oscillation frequency of quantum well oscillators

IEEE transactions on electron devices, 1988-04, Vol.35 (4), p.405-413

1988

Volltextzugriff (PDF)

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Surface-stress-induced order in SiGe alloy films

Diffusion versus oxidation rates in silicon-germanium alloys

Interfacial reactions and Schottky barriers of Pt and Pd on epitaxial Si1-xGex alloys

Long-range order in thick, unstrained Si0.5Ge0.5 epitaxial layers

A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices

Probing band structure anisotropy in quantum wells via magnetotunneling

Photoluminescence studies of pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs quantum wells

Dependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single-barrier structures grown by molecular beam epitaxy

Femtosecond ellipsometric study of nonequilibrium carrier dynamics in Ge and epitaxial Si1-xGex

Titanium silicide/germanide formation on submicron features for high mobility SiGe channel field effect transistors

Cross-sectional scanning tunneling microscopy of MBE-grown Si p-n junctions and Si/SiGe superlattices

Monolithic millimetre-wave oscillator using a transmission line periodically loaded by QWITT diodes

Si/SiGe heterostructures grown on SOI substrates by MBE for integrated optoelectronics

Similarities between the Landau spectra and dispersion relations in Si/Si1-xGex quantum wells investigated by magnetotunneling spectroscopy

Cyclotron effective mass of holes in strained Si1-xGex/Si quantum well structures

Growth and rapid thermal annealing of AlGaAs/InGaAs pseudomorphic modulation-doped structures

Dopant incorporation in epitaxial germanium grown on Ge(100) substrates by MBE

A new transit-time device using quantum-well injection

p-type doping of germanium grown by molecular beam epitaxy on Ge(100) substrates

Microwave frequency operation of quantum-well injection transit time (QWITT) diode

A VLSI-compatible high-speed silicon photodetector for optical data link applications

Influence of device structure and growth conditions on the tunneling characteristics of Si/Si1-xGex double barrier structures

Photoluminescence and electroreflectance studies of modulation-doped pseudomorphic AlGaAs/InGaAs/GaAs quantum wells

Influence of MBE growth temperature on GaAs/AlAs resonant tunneling structures

The influence of transit-time effects on the optimum design and maximum oscillation frequency of quantum well oscillators

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