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Evaluations of intrinsic time dependent dielectric breakdown of dielectric copper diffusion barriers

Thin solid films, 2011-10, Vol.520 (1), p.662-666

2011

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Channel Hot Carrier Degradation Mechanism in Long/Short Channel n-FinFETs

IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4002-4007

2013

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Positive and negative bias temperature instability on sub-nanometer eot high-K MOSFETs

2010 IEEE International Reliability Physics Symposium, 2010, p.1095-1098

2010

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Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT Devices

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2042-2048

2012

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Improved NBTI reliability with sub-1-nanometer EOT ZrO2 gate dielectric compared with HfO2

IEEE electron device letters, 2013-05, Vol.34 (5), p.593-595

2013

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Negative Bias Temperature Instability in p-FinFETs With 45 ^ Substrate Rotation

IEEE electron device letters, 2013-10, Vol.34 (10), p.1211-1213

2013

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SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.405-412

2013

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Development of High-Density Metal-Insulator-Metal Capacitors with Top and Side Contacts

2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2023, p.1-3

2023

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Interface Trap Characterization of a 5.8-Å EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique

IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3342-3349

2011

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Improved NBTI reliability with sub-1-nanometer EOT ZrO 2 gate dielectric compared with HfO 2

IEEE electron device letters, 2013-05, Vol.34 (5), p.593-595

2013

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Oxygen-Soluble Gate Electrodes for Prolonged High- \kappa Gate-Stack Reliability

IEEE electron device letters, 2011-03, Vol.32 (3), p.252-254

2011

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A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2935-2943

2014

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A New TDDB Reliability Prediction Methodology Accounting for Multiple SBD and Wear Out

IEEE transactions on electron devices, 2009-07, Vol.56 (7), p.1424-1432

2009

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Reliability of thin ZrO sub(2 gate dielectric layers)

Microelectronics and reliability, 2011-06, Vol.51 (6), p.1118-1122

2011

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Investigation of hot carrier degradation in bulk FinFET

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.XT-6.1-XT-6.4

2017

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Low Weibull slope of breakdown distributions in high-k layers

IEEE electron device letters, 2002-04, Vol.23 (4), p.215-217

2002

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Scaling CMOS: Finding the gate stack with the lowest leakage current

Solid-state electronics, 2005-05, Vol.49 (5), p.695-701

2005

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Reliability of thin ZrO 2 gate dielectric layers

Microelectronics and reliability, 2011, Vol.51 (6), p.1118-1122

2011

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Oxygen-Soluble Gate Electrodes for Prolonged High-[Formula Omitted] Gate-Stack Reliability

IEEE electron device letters, 2011-03, Vol.32 (3), p.252

2011

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Reliability of thin ZrO2 gate dielectric layers

Microelectronics and reliability, 2011-06, Vol.51 (6), p.1118-1122

2011

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Interface Trap Characterization of a 5.8- hbox rm AA EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique

IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3342-3349

2011

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Interface/Bulk Trap Recovery After Submelt Laser Anneal and the Impact to NBTI Reliability

IEEE electron device letters, 2010-06, Vol.31 (6), p.606-608

2010

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Análisis termo-eléctrico de elementos finitos (EF) en vías de cobre nanométricas bajo tensión de alta fluencia

Avances en Ciencias e Ingenierías, 2013-12, Vol.5 (2)

2013

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Thermal-Electrical finite element analysis of nanometric copper vias under high fluence stress

Avances en Ciencias e Ingenierías, 2013-12, Vol.5 (2)

2013

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Electron energy dependence of defect generation in high- k gate stacks

Journal of applied physics, 2008-03, Vol.103 (6), p.064503-064503-6

2008

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Evaluations of intrinsic time dependent dielectric breakdown of dielectric copper diffusion barriers

Channel Hot Carrier Degradation Mechanism in Long/Short Channel n-FinFETs

Positive and negative bias temperature instability on sub-nanometer eot high-K MOSFETs

Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT Devices

Improved NBTI reliability with sub-1-nanometer EOT ZrO2 gate dielectric compared with HfO2

Negative Bias Temperature Instability in p-FinFETs With 45 ^ Substrate Rotation

SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues

Development of High-Density Metal-Insulator-Metal Capacitors with Top and Side Contacts

Interface Trap Characterization of a 5.8-Å EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique

Improved NBTI reliability with sub-1-nanometer EOT ZrO 2 gate dielectric compared with HfO 2

Oxygen-Soluble Gate Electrodes for Prolonged High- \kappa Gate-Stack Reliability

A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond

A New TDDB Reliability Prediction Methodology Accounting for Multiple SBD and Wear Out

Reliability of thin ZrO sub(2 gate dielectric layers)

Investigation of hot carrier degradation in bulk FinFET

Low Weibull slope of breakdown distributions in high-k layers

Scaling CMOS: Finding the gate stack with the lowest leakage current

Reliability of thin ZrO 2 gate dielectric layers

Oxygen-Soluble Gate Electrodes for Prolonged High-[Formula Omitted] Gate-Stack Reliability

Reliability of thin ZrO2 gate dielectric layers

Interface Trap Characterization of a 5.8- hbox rm AA EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique

Interface/Bulk Trap Recovery After Submelt Laser Anneal and the Impact to NBTI Reliability

Análisis termo-eléctrico de elementos finitos (EF) en vías de cobre nanométricas bajo tensión de alta fluencia

Thermal-Electrical finite element analysis of nanometric copper vias under high fluence stress

Electron energy dependence of defect generation in high- k gate stacks

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