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A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

IEEE journal of solid-state circuits, 2008-01, Vol.43 (1), p.150-162

2008

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Three-Dimensional Integration Approach to High-Density Memory Devices

IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.3820-3828

2011

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Enhanced write performance of a 64-mb phase-change random access memory

IEEE journal of solid-state circuits, 2006-01, Vol.41 (1), p.122-126

2006

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A 0.1- \mu} 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

IEEE journal of solid-state circuits, 2007-01, Vol.42 (1), p.210-218

2007

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Electrical and structural characterization of AlxGa1−xN/GaN heterostructures grown on LiGaO2 substrates

Applied physics letters, 1999-05, Vol.74 (22), p.3380-3382

1999

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The heterogenous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon

IEEE photonics technology letters, 2002-02, Vol.14 (2), p.185-187

2002

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A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

IEEE journal of solid-state circuits, 2007, Vol.42 (1), p.210-218

2007

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A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

IEEE journal of solid-state circuits, 2005, Vol.40 (1), p.293-300

2005

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GaN metal–semiconductor–metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy

Applied physics letters, 2001-08, Vol.79 (9), p.1372-1374

2001

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MBE growth of high quality GaN on LiGaO2 for high frequency, high power electronic applications

Solid-state electronics, 2000-02, Vol.44 (2), p.229-238

2000

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MBE growth of high quality GaN on LiGaO sub(2) for high frequency, high power electronic applications

Solid-state electronics, 2000-02, Vol.44 (2), p.229-238

2000

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MBE growth of high quality GaN on LiGaO 2 for high frequency, high power electronic applications

Solid-state electronics, 2000, Vol.44 (2), p.229-238

2000

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The epitaxial growth of gallium nitride and aluminum gallium nitride/gallium nitride heterostructure field effect transistors (HFET) on lithium gallate substrates

Kang, Sangbeom

2002

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A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

IEEE journal of solid-state circuits, 2005-01, Vol.40 (1), p.293-300

2005

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A 0.18-[micro]m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

IEEE journal of solid-state circuits, 2005-01, Vol.40 (1), p.293

2005

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A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

IEEE journal of solid-state circuits, 2005-01, Vol.40 (1), p.293-300

2005

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Heterogeneous integration: from substrate technology to active packaging

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001, p.9.3.1-9.3.4

2001

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Interfacial Structure and Defects in GaN/AlGaN Heterojunction Epitaxially Grown on LiGa02 Substrate by Molecular Beam Epitaxy

Microscopy and microanalysis, 2000-08, Vol.6 (S2), p.1106-1107

2000

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A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 2007, p.472-616

2007

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Comparison of AlGaN and GaN Grown on Various Substrates: Step Flow Growth on LiGaO2 at Low Growth Temperature

Materials science forum, 2000-01, Vol.338-342, p.1499-1502

2000

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A 0.1/spl mu/m 1.8V 256Mb 66MHz Synchronous Burst PRAM

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers, 2006, p.487-496

2006

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Characterization of AlGaN/GaN structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy

Journal of electronic materials, 2001-03, Vol.30 (3), p.156-161

2001

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The growth of GaN on lithium gallate (LiGaO2) substrates for material integration

Journal of electronic materials, 2000-07, Vol.29 (7), p.894-896

2000

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Enhanced write performance of a 64 Mb phase-change random access memory

ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005, 2005, p.48-584 Vol. 1

2005

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Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE

MRS Internet journal of nitride semiconductor research, 2000-01, Vol.5 (1), p.1-1, Article e10

2000

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A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

Three-Dimensional Integration Approach to High-Density Memory Devices

Enhanced write performance of a 64-mb phase-change random access memory

A 0.1- \mu} 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Electrical and structural characterization of AlxGa1−xN/GaN heterostructures grown on LiGaO2 substrates

The heterogenous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon

A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

GaN metal–semiconductor–metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy

MBE growth of high quality GaN on LiGaO2 for high frequency, high power electronic applications

MBE growth of high quality GaN on LiGaO sub(2) for high frequency, high power electronic applications

MBE growth of high quality GaN on LiGaO 2 for high frequency, high power electronic applications

The epitaxial growth of gallium nitride and aluminum gallium nitride/gallium nitride heterostructure field effect transistors (HFET) on lithium gallate substrates

A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

A 0.18-[micro]m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

Heterogeneous integration: from substrate technology to active packaging

Interfacial Structure and Defects in GaN/AlGaN Heterojunction Epitaxially Grown on LiGa02 Substrate by Molecular Beam Epitaxy

A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

Comparison of AlGaN and GaN Grown on Various Substrates: Step Flow Growth on LiGaO2 at Low Growth Temperature

A 0.1/spl mu/m 1.8V 256Mb 66MHz Synchronous Burst PRAM

Characterization of AlGaN/GaN structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy

The growth of GaN on lithium gallate (LiGaO2) substrates for material integration

Enhanced write performance of a 64 Mb phase-change random access memory

Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE

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