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Mechanism of the Wake-Up and the Split-Up in AlOx/Hf0.5Zr0.5Ox Film

Nanomaterials (Basel, Switzerland), 2023-07, Vol.13 (14), p.2146

2023

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Mechanism of the reset process in bipolar-resistance-switching Ta/TaOx/Pt capacitors based on observation of the capacitance and resistance

Applied physics letters, 2014-03, Vol.104 (12)

2014

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Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

Advanced materials (Weinheim), 2007-11, Vol.19 (22), p.3919-3923

2007

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Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

Nano letters, 2009-04, Vol.9 (4), p.1476-1481

2009

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Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

Applied physics letters, 2010-08, Vol.97 (5)

2010

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Optimization Method for Conductance Modulation in Ferroelectric Transistor for Neuromorphic Computing

Advanced electronic materials, 2024-05, Vol.10 (5), p.n/a

2024

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Highly reliable bipolar resistive switching of tantalum oxide-based memory using Al2O3 diffusion barrier layers

Current applied physics, 2024-05, Vol.61, p.75-79

2024

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Roles of the first atomic layers in growth of SrTiO3 films on LaAlO3 substrates

Applied physics letters, 1999-04, Vol.74 (15), p.2176-2178

1999

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Forming process of unipolar resistance switching in Ta2O5−x thin films

Current Applied Physics, 2013, 13(7), , pp.1172-1174

2013

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Reduced distributions of the set current and the voltage of unipolar resistance switching in a current-biased set process

Journal of the Korean Physical Society, 2016, 68(12), , pp.1467-1471

2016

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Mobility Enhanced Photoactivity in Sol−Gel Grown Epitaxial Anatase TiO2 Films

Langmuir, 2008-03, Vol.24 (6), p.2695-2698

2008

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Strain Relaxation in Sol−Gel Grown Epitaxial Anatase Thin Films

Journal of physical chemistry. C, 2008-03, Vol.112 (11), p.4205-4208

2008

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Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching

IEEE transactions on nanotechnology, 2010-03, Vol.9 (2), p.131-133

2010

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Investigation for Resistive Switching by Controlling Overflow Current in Resistance Change Nonvolatile Memory

IEEE transactions on nanotechnology, 2012-11, Vol.11 (6), p.1122-1125

2012

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Multilevel Programmable Oxide Diode for Cross-Point Memory by Electrical-Pulse-Induced Resistance Change

IEEE electron device letters, 2009-10, Vol.30 (10), p.1036-1038

2009

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Stackable All-Oxide-Based Nonvolatile Memory With Al2O3 Antifuse and p-CuOx/n-InZnOx Diode

IEEE electron device letters, 2009-05, Vol.30 (5), p.550-552

2009

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Highly stable, solution-processed quaternary oxide thin film-based resistive switching random access memory devices via global and local stoichiometric manipulation strategy

Nanotechnology, 2020-03, Vol.31 (24), p.245202-245202

2020

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Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime

Solid-state electronics, 2024-09, Vol.219, p.108964, Article 108964

2024

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Polarization switching dynamics simulation by using the practical distribution of ferroelectric properties

Applied physics letters, 2023-01, Vol.122 (1)

2023

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Mechanism of the Wake-Up and the Split-Up in AlO x /Hf 0.5 Zr 0.5 O x Film

Nanomaterials (Basel, Switzerland), 2023-07, Vol.13 (14)

2023

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Mechanism of the Wake-Up and the Split-Up in AlOIx/I/Hf[sub.0.5]Zr[sub.0.5]OIx/I Film

Nanomaterials (Basel, Switzerland), 2023-07, Vol.13 (14)

2023

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Pulse program for improving learning accuracy and reducing programming energy consumption of ferroelectric synaptic transistor

Current applied physics, 2024-11, Vol.67, p.93-100

2024

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Effect of wake-up on the polarization switching dynamics of Si doped HfO2 thin films with imprint

Journal of alloys and compounds, 2020-05, Vol.823, p.153777, Article 153777

2020

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Effects of Pb content and electrode materials on the ferroelectric properties of Pb(Zr0.52Ti0.48)O3 thin films

Journal of alloys and compounds, 2019-04, Vol.781, p.1028-1032

2019

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Phase-shifting behaviour revisited: An alternative measure

Physica A, 2014-05, Vol.401, p.167-173

2014

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Mechanism of the Wake-Up and the Split-Up in AlOx/Hf0.5Zr0.5Ox Film

Mechanism of the reset process in bipolar-resistance-switching Ta/TaOx/Pt capacitors based on observation of the capacitance and resistance

Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

Optimization Method for Conductance Modulation in Ferroelectric Transistor for Neuromorphic Computing

Highly reliable bipolar resistive switching of tantalum oxide-based memory using Al2O3 diffusion barrier layers

Roles of the first atomic layers in growth of SrTiO3 films on LaAlO3 substrates

Forming process of unipolar resistance switching in Ta2O5−x thin films

Reduced distributions of the set current and the voltage of unipolar resistance switching in a current-biased set process

Mobility Enhanced Photoactivity in Sol−Gel Grown Epitaxial Anatase TiO2 Films

Strain Relaxation in Sol−Gel Grown Epitaxial Anatase Thin Films

Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching

Investigation for Resistive Switching by Controlling Overflow Current in Resistance Change Nonvolatile Memory

Multilevel Programmable Oxide Diode for Cross-Point Memory by Electrical-Pulse-Induced Resistance Change

Stackable All-Oxide-Based Nonvolatile Memory With Al2O3 Antifuse and p-CuOx/n-InZnOx Diode

Highly stable, solution-processed quaternary oxide thin film-based resistive switching random access memory devices via global and local stoichiometric manipulation strategy

Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime

Polarization switching dynamics simulation by using the practical distribution of ferroelectric properties

Mechanism of the Wake-Up and the Split-Up in AlO x /Hf 0.5 Zr 0.5 O x Film

Mechanism of the Wake-Up and the Split-Up in AlOIx/I/Hf[sub.0.5]Zr[sub.0.5]OIx/I Film

Pulse program for improving learning accuracy and reducing programming energy consumption of ferroelectric synaptic transistor

Effect of wake-up on the polarization switching dynamics of Si doped HfO2 thin films with imprint

Effects of Pb content and electrode materials on the ferroelectric properties of Pb(Zr0.52Ti0.48)O3 thin films

Phase-shifting behaviour revisited: An alternative measure

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