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Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates

Journal of crystal growth, 2016-12, Vol.456, p.80-85

2016

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HVPE-GaN growth on misoriented ammonothermal GaN seeds

Journal of crystal growth, 2014-10, Vol.403, p.32-37

2014

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Multi feed seed (MFS) high pressure crystallization of 1―2 in GaN

Journal of crystal growth, 2012-07, Vol.350 (1), p.5-10

2012

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Preparation of a smooth GaN–Gallium solid–liquid interface

Journal of crystal growth, 2016-08, Vol.448, p.70-75

2016

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Defect-selective etching of GaN in a modified molten bases system

Journal of crystal growth, 2002-12, Vol.246 (1), p.21-24

2002

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Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates

Journal of crystal growth, 2005-07, Vol.281 (1), p.38-46

2005

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Raman scattering study of Ga1−xMnxN crystals

Applied physics letters, 2000-06, Vol.76 (26), p.3870-3872

2000

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The influence of lattice parameter variation on microstructure of GaN single crystals

Journal of alloys and compounds, 2005-09, Vol.401 (1), p.261-264

2005

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Free and bound excitons in GaN ∕ AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar ( 11 2 ¯ 0 ) direction

Applied physics letters, 2005-04, Vol.86 (16), p.162112-162112-3

2005

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Fabrication and properties of GaN-based lasers

Journal of crystal growth, 2008-08, Vol.310 (17), p.3979-3982

2008

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Strain-compensated AlGaN∕GaN∕InGaN cladding layers in homoepitaxial nitride devices

Applied physics letters, 2007-12, Vol.91 (23)

2007

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Defects in GaN single crystals and homoepitaxial structures

Journal of crystal growth, 2005-07, Vol.281 (1), p.135-142

2005

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Structural defects in GaN crystals grown by HVPE on needle-shaped GaN seeds obtained under high N2 pressure

Journal of crystal growth, 2009-02, Vol.311 (5), p.1407-1410

2009

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Control of Mg doping of GaN in RF-plasma molecular beam epitaxy

Journal of crystal growth, 2005-05, Vol.278 (1), p.443-448

2005

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High rate photoelectrochemical etching of GaN and the use of patterned substrates for HVPE regrowth

Journal of crystal growth, 2008-07, Vol.310 (15), p.3478-3481

2008

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Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates

Journal of crystal growth, 2004-10, Vol.270 (3-4), p.409-419

2004

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High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy

Semiconductor science and technology, 2005-08, Vol.20 (8), p.809-813

2005

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High nitrogen pressure solution (HNPS) growth of GaN on 2 inch free standing GaN substrates

Science China Technological Sciences, 2011-01, Vol.54 (1), p.42-46

2011

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Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method

Journal of crystal growth, 2005-07, Vol.281 (1), p.11-16

2005

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Structural properties of GaN and Ga1-xMnxN layers grown by sublimation sandwich method

Physica status solidi. A, Applications and materials science, 2008-07, Vol.205 (7), p.1592-1597

2008

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Structural properties of GaN and Ga1-x Mnx N layers grown by sublimation sandwich method

Physica status solidi. A, Applications and materials science, 2008-07, Vol.205 (7), p.1592-1597

2008

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Selective etching of dislocations in violet-laser diode structures

Journal of crystal growth, 2006-07, Vol.293 (1), p.18-21

2006

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Platelets and needles: Two habits of pressure-grown GaN crystals

Journal of crystal growth, 2007-07, Vol.305 (2), p.414-420

2007

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Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures

Journal of crystal growth, 2005-01, Vol.274 (1), p.55-64

2005

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Crystallization of free standing bulk GaN by HVPE

Physica status solidi. C, 2006-06, Vol.3 (6), p.1453-1456

2006

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Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates

HVPE-GaN growth on misoriented ammonothermal GaN seeds

Multi feed seed (MFS) high pressure crystallization of 1―2 in GaN

Preparation of a smooth GaN–Gallium solid–liquid interface

Defect-selective etching of GaN in a modified molten bases system

Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates

Raman scattering study of Ga1−xMnxN crystals

The influence of lattice parameter variation on microstructure of GaN single crystals

Free and bound excitons in GaN ∕ AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar ( 11 2 ¯ 0 ) direction

Fabrication and properties of GaN-based lasers

Strain-compensated AlGaN∕GaN∕InGaN cladding layers in homoepitaxial nitride devices

Defects in GaN single crystals and homoepitaxial structures

Structural defects in GaN crystals grown by HVPE on needle-shaped GaN seeds obtained under high N2 pressure

Control of Mg doping of GaN in RF-plasma molecular beam epitaxy

High rate photoelectrochemical etching of GaN and the use of patterned substrates for HVPE regrowth

Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates

High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy

High nitrogen pressure solution (HNPS) growth of GaN on 2 inch free standing GaN substrates

Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method

Structural properties of GaN and Ga1-xMnxN layers grown by sublimation sandwich method

Structural properties of GaN and Ga1-x Mnx N layers grown by sublimation sandwich method

Selective etching of dislocations in violet-laser diode structures

Platelets and needles: Two habits of pressure-grown GaN crystals

Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures

Crystallization of free standing bulk GaN by HVPE

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