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Electronic Defects in Amorphous Oxide Semiconductors: A Review

Physica status solidi. A, Applications and materials science, 2019-03, Vol.216 (5), p.n/a

2019

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Present status of amorphous In-Ga-Zn-O thin-film transistors

Science and technology of advanced materials, 2010-08, Vol.11 (4), p.044305-044305

2010

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Intrinsic defects in a photovoltaic perovskite variant Cs2SnI6

Physical chemistry chemical physics : PCCP, 2015-07, Vol.17 (29), p.18900-18903

2015

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Highly Efficient Blue‐Emitting Bi‐Doped Cs2SnCl6 Perovskite Variant: Photoluminescence Induced by Impurity Doping

Advanced functional materials, 2018-07, Vol.28 (29), p.n/a

2018

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Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

Applied physics letters, 2009-07, Vol.95 (1)

2009

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Material characteristics and applications of transparent amorphous oxide semiconductors

NPG Asia materials, 2010-01, Vol.2 (1), p.15-22

2010

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Enhancement of thermoelectric performance by breaking thermopower – conductivity trade-off relation in artificially designed oxide thin-film heterostructures

Journal of the Ceramic Society of Japan, 2023-08, Vol.131 (8), p.343-349, Article 22159

2023

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Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs

Proceedings of the National Academy of Sciences - PNAS, 2017-01, Vol.114 (2), p.233-238

2017

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Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x : Tauc-Lorentz optical model and origins of subgap states

Physica status solidi. A, Applications and materials science, 2009-05, Vol.206 (5), p.860-867

2009

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Electric field-induced superconducting transition of insulating FeSe thin film at 35 K

Proceedings of the National Academy of Sciences - PNAS, 2016-04, Vol.113 (15), p.3986-3990

2016

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Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors

Applied physics letters, 2010-03, Vol.96 (12), p.122103-122103-3

2010

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Symmetric Ambipolar Thin-Film Transistors and High-Gain CMOS-like Inverters Using Environmentally Friendly Copper Nitride

ACS applied materials & interfaces, 2019-09, Vol.11 (38), p.35132-35137

2019

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Shallow Valence Band of Rutile GeO2 and P‑type Doping

Journal of physical chemistry. C, 2020-11, Vol.124 (47), p.25721-25728

2020

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Thickness-dependent intergrowth of Ruddlesden–Popper impurity structures in solid-phase epitaxial growth of Ca2RuO4 thin films

Journal of the Ceramic Society of Japan, 2024-07, Vol.132 (7), p.312-317, Article 23213

2024

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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Nature, 2004-11, Vol.432 (7016), p.488-492

2004

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Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

Applied physics letters, 2011-08, Vol.99 (5), p.053505-053505-3

2011

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Electron Confinement in Channel Spaces for One-Dimensional Electride

The journal of physical chemistry letters, 2015-12, Vol.6 (24), p.4966-4971

2015

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Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

Journal of applied physics, 2011-04, Vol.109 (7), p.073726-073726-8

2011

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Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

Applied physics letters, 2008-11, Vol.93 (19)

2008

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Ligand-Hole in [SnI6] Unit and Origin of Band Gap in Photovoltaic Perovskite Variant Cs2SnI6

Bulletin of the Chemical Society of Japan, 2015, Vol.88 (9), p.1250-1255

2015

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Ion Substitution Effect on Defect Formation in Two-Dimensional Transition Metal Nitride Semiconductors, AETiN2 (AE = Ca, Sr, and Ba)

Inorganic chemistry, 2021-07, Vol.60 (14), p.10227-10234

2021

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Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model

Journal of display technology, 2009-12, Vol.5 (12), p.462-467

2009

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Symmetry change in LaNiO3 films caused by epitaxial strain from LaAlO3, SrTiO3, and DyScO3 pseudocubic (001) surfaces

Journal of applied physics, 2024-08, Vol.136 (7)

2024

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Enhanced critical-current in P-doped BaFe2As2 thin films on metal substrates arising from poorly aligned grain boundaries

Scientific reports, 2016-11, Vol.6 (1), p.36828-36828, Article 36828

2016

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Crystal Structures, Optoelectronic Properties, and Electronic Structures of Layered Oxychalcogenides MCuOCh (M = Bi, La; Ch = S, Se, Te): Effects of Electronic Configurations of M3+ Ions

Chemistry of materials, 2008-01, Vol.20 (1), p.326-334

2008

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Electronic Defects in Amorphous Oxide Semiconductors: A Review

Present status of amorphous In-Ga-Zn-O thin-film transistors

Intrinsic defects in a photovoltaic perovskite variant Cs2SnI6

Highly Efficient Blue‐Emitting Bi‐Doped Cs2SnCl6 Perovskite Variant: Photoluminescence Induced by Impurity Doping

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

Material characteristics and applications of transparent amorphous oxide semiconductors

Enhancement of thermoelectric performance by breaking thermopower – conductivity trade-off relation in artificially designed oxide thin-film heterostructures

Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs

Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x : Tauc-Lorentz optical model and origins of subgap states

Electric field-induced superconducting transition of insulating FeSe thin film at 35 K

Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors

Symmetric Ambipolar Thin-Film Transistors and High-Gain CMOS-like Inverters Using Environmentally Friendly Copper Nitride

Shallow Valence Band of Rutile GeO2 and P‑type Doping

Thickness-dependent intergrowth of Ruddlesden–Popper impurity structures in solid-phase epitaxial growth of Ca2RuO4 thin films

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

Electron Confinement in Channel Spaces for One-Dimensional Electride

Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

Ligand-Hole in [SnI6] Unit and Origin of Band Gap in Photovoltaic Perovskite Variant Cs2SnI6

Ion Substitution Effect on Defect Formation in Two-Dimensional Transition Metal Nitride Semiconductors, AETiN2 (AE = Ca, Sr, and Ba)

Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model

Symmetry change in LaNiO3 films caused by epitaxial strain from LaAlO3, SrTiO3, and DyScO3 pseudocubic (001) surfaces

Enhanced critical-current in P-doped BaFe2As2 thin films on metal substrates arising from poorly aligned grain boundaries

Crystal Structures, Optoelectronic Properties, and Electronic Structures of Layered Oxychalcogenides MCuOCh (M = Bi, La; Ch = S, Se, Te): Effects of Electronic Configurations of M3+ Ions

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