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Reconsideration of Dielectric Breakdown Mechanism of Gate Dielectrics on Basis of Dominant Carrier Change Model

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4386-4392

2017

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Chromatin accessibility profiling in Neurospora crassa reveals molecular features associated with accessible and inaccessible chromatin

BMC genomics, 2021-06, Vol.22 (1), p.459-459, Article 459

2021

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The LSH/DDM1 Homolog MUS-30 Is Required for Genome Stability, but Not for DNA Methylation in Neurospora crassa

PLoS genetics, 2016-01, Vol.12 (1), p.e1005790

2016

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Charge separation at the rutile/anatase interface: a dominant factor of photocatalytic activity

Chemical physics letters, 2004-06, Vol.390 (4), p.399-402

2004

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Deletion and expression analysis of beta-(1,3)-glucanosyltransferase genes in Neurospora crassa

Fungal genetics and biology, 2013-03, Vol.52, p.65-72

2013

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HYBRIDIZATION OF ANTOCYANIN DYES FROM PURPLE CABBAGE WITH SYNTHETIC SAPONITE: EFFECTS OF ALUMINUM ION ON COLOR STABILIZATION

Clay Science, 2021/12/08, Vol.25(3-4), pp.33-37

2021

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Phenotypic abnormalities of fr, sp, and och-1 single mutants are suppressed by loss of putative GPI-phospholipase A2 in Neurospora crassa

Mycoscience, 2016, Vol.58(3), pp.137-146

2017

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Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-$k$ Metal--Oxide--Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics, 2011-10, Vol.50 (10), p.10PG02-10PG02-7

2011

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Histone H1 Limits DNA Methylation in Neurospora crassa

G3 : genes - genomes - genetics, 2016-07, Vol.6 (7), p.1879-1889

2016

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(Invited) Characterization of Oxide Traps Participating in Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETs

ECS transactions, 2013-08, Vol.58 (9), p.265-279

2013

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Estimation of defect generation probability in thin Si surface damaged layer during plasma processing

Thin solid films, 2008-08, Vol.516 (19), p.6604-6608

2008

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Hydrophobic drawings on hydrophilic surfaces of single crystalline titanium dioxide: surface wettability control by mechanochemical treatment

Surface science, 2000-08, Vol.463 (1), p.L609-L612

2000

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Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal--Oxide--Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2010-08, Vol.49 (8), p.08JC02-08JC02-5

2010

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Random telegraph noise as a new measure of plasma-induced charging damage in MOSFETs

2014 IEEE International Conference on IC Design & Technology, 2014, p.1-4

2014

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Strain-induced charge separation in the photocatalytic single crystalline anatase TiO2 film

Chemical physics letters, 2005-05, Vol.407 (1-3), p.209-212

2005

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Electrical and Structural Properties of Tin-Doped Indium Oxide Films Deposited by DC Sputtering at Room Temperature

Japanese Journal of Applied Physics, 1999-05, Vol.38 (5R), p.2921

1999

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Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal--Oxide--Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DA18-04DA18-8

2010

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Normal Patterns of Histone H3K27 Methylation Require the Histone Variant H2A.Z in Neurospora crassa

Genetics (Austin), 2020-09, Vol.216 (1), p.51-66

2020

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High-k MOSFET performance degradation by plasma process-induced charging damage - Impacts on device parameter variation

2012 IEEE International Integrated Reliability Workshop Final Report, 2012, p.80-84

2012

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Origin of characteristic grain-subgrain structure of tin-doped indium oxide films

Thin solid films, 1995-04, Vol.259 (1), p.38-45

1995

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Preparation and Crystallization of Tin-doped and Undoped Amorphous Indium Oxide Films Deposited by Sputtering

Japanese Journal of Applied Physics, 1999-09, Vol.38 (9R), p.5224

1999

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Superior Schottky electrode of RuO2 for deep level transient spectroscopy on anatase TiO2

Applied physics letters, 2003-09, Vol.83 (9), p.1782-1784

2003

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IMITATION SWITCH is required for normal chromatin structure and gene repression in PRC2 target domains

Proceedings of the National Academy of Sciences - PNAS, 2021-01, Vol.118 (4), p.1-9

2021

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Modeling the effects of plasma-induced physical damage on subthreshold leakage current in scaled MOSFETs

2010 IEEE International Conference on Integrated Circuit Design and Technology, 2010, p.94-97

2010

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PHOTOCATALYTIC PROPERTY AND DEEP LEVELS OF Nb-DOPED ANATASE TiO2 FILM GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSTION

Jpn.J.Appl.Phys ,Part 1. Vol. 43, no. 2, pp. 775-776. 2004, 2004, Vol.43 (2), p.775-776

2004

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Reconsideration of Dielectric Breakdown Mechanism of Gate Dielectrics on Basis of Dominant Carrier Change Model

Chromatin accessibility profiling in Neurospora crassa reveals molecular features associated with accessible and inaccessible chromatin

The LSH/DDM1 Homolog MUS-30 Is Required for Genome Stability, but Not for DNA Methylation in Neurospora crassa

Charge separation at the rutile/anatase interface: a dominant factor of photocatalytic activity

Deletion and expression analysis of beta-(1,3)-glucanosyltransferase genes in Neurospora crassa

HYBRIDIZATION OF ANTOCYANIN DYES FROM PURPLE CABBAGE WITH SYNTHETIC SAPONITE: EFFECTS OF ALUMINUM ION ON COLOR STABILIZATION

Phenotypic abnormalities of fr, sp, and och-1 single mutants are suppressed by loss of putative GPI-phospholipase A2 in Neurospora crassa

Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-$k$ Metal--Oxide--Semiconductor Field-Effect Transistor

Histone H1 Limits DNA Methylation in Neurospora crassa

(Invited) Characterization of Oxide Traps Participating in Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETs

Estimation of defect generation probability in thin Si surface damaged layer during plasma processing

Hydrophobic drawings on hydrophilic surfaces of single crystalline titanium dioxide: surface wettability control by mechanochemical treatment

Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal--Oxide--Semiconductor Field-Effect Transistors

Random telegraph noise as a new measure of plasma-induced charging damage in MOSFETs

Strain-induced charge separation in the photocatalytic single crystalline anatase TiO2 film

Electrical and Structural Properties of Tin-Doped Indium Oxide Films Deposited by DC Sputtering at Room Temperature

Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal--Oxide--Semiconductor Field-Effect Transistors

Normal Patterns of Histone H3K27 Methylation Require the Histone Variant H2A.Z in Neurospora crassa

High-k MOSFET performance degradation by plasma process-induced charging damage - Impacts on device parameter variation

Origin of characteristic grain-subgrain structure of tin-doped indium oxide films

Preparation and Crystallization of Tin-doped and Undoped Amorphous Indium Oxide Films Deposited by Sputtering

Superior Schottky electrode of RuO2 for deep level transient spectroscopy on anatase TiO2

IMITATION SWITCH is required for normal chromatin structure and gene repression in PRC2 target domains

Modeling the effects of plasma-induced physical damage on subthreshold leakage current in scaled MOSFETs

PHOTOCATALYTIC PROPERTY AND DEEP LEVELS OF Nb-DOPED ANATASE TiO2 FILM GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSTION

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