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Stimulated emission in strained-layer quantum-well heterostructures

Journal of applied physics, 1983-11, Vol.54 (11), p.6183-6189

1983

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Influence of annealing and substrate orientation on metalorganic chemical vapor deposition GaAs on silicon heteroepitaxy

Journal of applied physics, 1988-08, Vol.64 (3), p.1196-1200

1988

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Photopumped laser operation of GaAs doping superlattices

Applied physics letters, 1986-01, Vol.48 (3), p.251-253

1986

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Si-Si pair diffusion and correlation in AlxGa1-xAs and GaAs

Applied physics letters, 1985-01, Vol.47 (7), p.710-712

1985

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Effect of layer size on lattice distortion in strained-layer superlattices

Applied physics letters, 1984-01, Vol.44 (12), p.1158-1160

1984

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High-energy stimulated emission in GaAs quantum wells coupled with (Si2)x(GaAs)1-x barriers (ħω≥EL,EX)

Applied physics letters, 1986-04, Vol.48 (14), p.943-945

1986

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Photopumped laser operation of AlxGa1-xAs-GaAs quantum well heterostructures with Se and Mg sheet doping

Applied physics letters, 1986-11, Vol.49 (20), p.1390-1392

1986

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Stacking and layer disordering of AlxGa1-xAs-GaAs quantum well heterostructures

Applied physics letters, 1986-03, Vol.48 (13), p.861-863

1986

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Resonant tunneling in a GaAs1-xPx-GaAs strained-layer quantum-well heterostructure

Solid state communications, 1984-01, Vol.52 (3), p.237-239

1984

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Impurity-induced disordering or AlxGa1-xAs-GaAs quantum well hétérostructures with (Si2)x(GaAs)1-x barriers

Journal of electronic materials, 1987, Vol.16 (1), p.87-91

1987

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Qualification of OMVPE AlGaAs/GaAs HBT structures using nondestructive photoreflectance spectroscopy

Journal of crystal growth, 1991, Vol.107 (1), p.893-897

1991

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Ion-implanted In0.1Ga0.9As metal-semiconductor field-effect transistors on GaAs (100) substrates

Applied physics letters, 1989-08, Vol.55 (6), p.568-569

1989

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Hydrostatic pressure measurements ( 12 kbar) on single- and multiple-stripe quantum-well heterostructure laser diodes

Journal of applied physics, 1985-03, Vol.57 (5), p.1495-1499

1985

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Thermal annealing and photoluminescence measurements on AlxGa1-xAs-GaAs quantum-well heterostructures with Se and Mg sheet doping

Journal of applied physics, 1987-08, Vol.62 (3), p.998-1005

1987

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Stable continuous room-temperature laser operation of AlxGa1-xAs-GaAs quantum well heterostructures grown on Si

Applied physics letters, 1987-07, Vol.51 (1), p.39-41

1987

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Ion-implanted In(0.1)Ga(0.9)As metal-semiconductor field-effect transistors on GaAs (100) substrates

Applied physics letters, 1989-08, Vol.55, p.568

1989

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Stability of AlAs in Al x Ga1− x As-AlAs-GaAs quantum well heterostructures

Applied physics letters, 1990-06, Vol.56 (24), p.2436-2438

1990

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Stable continuous room-temperature laser operation of Al(x)Ga(1-x)As-GaAs quantum well heterostructures grown on Si

Applied physics letters, 1987-07, Vol.51, p.39-41

1987

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Continuous (300 K) photopumped laser operation of Al(x)Ga(1-x)As-GaAs quantum well heterostructure grown on strained-layer GaAs on Si

Applied physics letters, 1987-03, Vol.50, p.836-838

1987

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Stability of AlAs in Alx Ga1-x As-AlAs-GaAs quantum well heterostructures

Applied physics letters, 1990, Vol.56 (24), p.2436-2438

1990

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Stacking and layer disordering of Al(x)Ga(1-x) As-GaAs quantum well heterostructures

Applied physics letters, 1986-03, Vol.48, p.861-863

1986

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Thermal annealing and photoluminescence measurements on Al x Ga1− x As-GaAs quantum-well heterostructures with Se and Mg sheet doping

Journal of applied physics, 1987-08, Vol.62 (3), p.998-1005

1987

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Stacking and layer disordering of Al x Ga1− x As-GaAs quantum well heterostructures

Applied physics letters, 1986-03, Vol.48 (13), p.861-863

1986

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Impurity induced layer disordering of Si implanted Al x Ga1− x As-GaAs quantum-well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops

Journal of applied physics, 1987-02, Vol.61 (4), p.1329-1334

1987

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Quantum well Al x Ga1− x As-GaAs lasers with internal (Si2) x (GaAs)1− x barriers

Applied physics letters, 1986-03, Vol.48 (12), p.800-802

1986

Volltextzugriff (PDF)

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Stimulated emission in strained-layer quantum-well heterostructures

Influence of annealing and substrate orientation on metalorganic chemical vapor deposition GaAs on silicon heteroepitaxy

Photopumped laser operation of GaAs doping superlattices

Si-Si pair diffusion and correlation in AlxGa1-xAs and GaAs

Effect of layer size on lattice distortion in strained-layer superlattices

High-energy stimulated emission in GaAs quantum wells coupled with (Si2)x(GaAs)1-x barriers (ħω≥EL,EX)

Photopumped laser operation of AlxGa1-xAs-GaAs quantum well heterostructures with Se and Mg sheet doping

Stacking and layer disordering of AlxGa1-xAs-GaAs quantum well heterostructures

Resonant tunneling in a GaAs1-xPx-GaAs strained-layer quantum-well heterostructure

Impurity-induced disordering or AlxGa1-xAs-GaAs quantum well hétérostructures with (Si2)x(GaAs)1-x barriers

Qualification of OMVPE AlGaAs/GaAs HBT structures using nondestructive photoreflectance spectroscopy

Ion-implanted In0.1Ga0.9As metal-semiconductor field-effect transistors on GaAs (100) substrates

Hydrostatic pressure measurements ( 12 kbar) on single- and multiple-stripe quantum-well heterostructure laser diodes

Thermal annealing and photoluminescence measurements on AlxGa1-xAs-GaAs quantum-well heterostructures with Se and Mg sheet doping

Stable continuous room-temperature laser operation of AlxGa1-xAs-GaAs quantum well heterostructures grown on Si

Ion-implanted In(0.1)Ga(0.9)As metal-semiconductor field-effect transistors on GaAs (100) substrates

Stability of AlAs in Al x Ga1− x As-AlAs-GaAs quantum well heterostructures

Stable continuous room-temperature laser operation of Al(x)Ga(1-x)As-GaAs quantum well heterostructures grown on Si

Continuous (300 K) photopumped laser operation of Al(x)Ga(1-x)As-GaAs quantum well heterostructure grown on strained-layer GaAs on Si

Stability of AlAs in Alx Ga1-x As-AlAs-GaAs quantum well heterostructures

Stacking and layer disordering of Al(x)Ga(1-x) As-GaAs quantum well heterostructures

Thermal annealing and photoluminescence measurements on Al x Ga1− x As-GaAs quantum-well heterostructures with Se and Mg sheet doping

Stacking and layer disordering of Al x Ga1− x As-GaAs quantum well heterostructures

Impurity induced layer disordering of Si implanted Al x Ga1− x As-GaAs quantum-well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops

Quantum well Al x Ga1− x As-GaAs lasers with internal (Si2) x (GaAs)1− x barriers

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