UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

On the way to airborne gravelometry based on 3D spatial data derived from images

International journal of sediment research, 2018-03, Vol.33 (1), p.84-92

2018

Volltextzugriff (PDF)

On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters

Journal of crystal growth, 2006-01, Vol.287 (2), p.656-663

2006

Volltextzugriff (PDF)

3D unsteady and steady modeling of heat and mass transfer during Cz Si crystal growth with a horizontal magnetic field

International journal of heat and mass transfer, 2021-10, Vol.178, p.121604, Article 121604

2021

Volltextzugriff (PDF)

Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors

Journal of crystal growth, 2006-04, Vol.289 (2), p.708-714

2006

Volltextzugriff (PDF)

Global modeling of the SiC sublimation growth process: prediction of thermoelastic stress and control of growth conditions

Journal of crystal growth, 2001-08, Vol.226 (4), p.501-510

2001

Volltextzugriff (PDF)

Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors

Journal of crystal growth, 2004-01, Vol.261 (2), p.175-181

2004

Volltextzugriff (PDF)

Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT

Journal of crystal growth, 2000-04, Vol.211 (1), p.333-338

2000

Volltextzugriff (PDF)

Modeling and experimental verification of deposition behavior during AlGaAs growth: a comparison for the carrier gases N 2 and H 2

Journal of crystal growth, 2001-02, Vol.223 (1), p.21-28

2001

Volltextzugriff (PDF)

Modeling and experimental verification of deposition behavior during AlGaAs growth : a comparison for the carrier gases N2 and H2

Journal of crystal growth, 2001-02, Vol.223 (1-2), p.21-28

2001

Volltextzugriff (PDF)

Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors

Journal of crystal growth, 2004-05, Vol.266 (1), p.354-362

2004

Volltextzugriff (PDF)

In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging

Journal of crystal growth, 2000-07, Vol.216 (1-4), p.263-272

2000

Volltextzugriff (PDF)

Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors

Journal of crystal growth, 2004-01, Vol.261 (2), p.190-196

2004

Volltextzugriff (PDF)

Kinetics of SiGe chemical vapor deposition from chloride precursors

Journal of crystal growth, 2006-01, Vol.287 (2), p.446-449

2006

Volltextzugriff (PDF)

Numerical simulation of global heat transfer in reactors for SiC bulk crystal growth by physical vapor transport

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.93-97

1999

Volltextzugriff (PDF)

A numerical approach for the solution of coupled fluid–solid and thermal stress problems in crystal growth processes

Computational materials science, 2002-06, Vol.24 (3), p.409-419

2002

Volltextzugriff (PDF)

Impact of source material on silicon carbide vapor transport growth process

Journal of crystal growth, 2001-05, Vol.225 (2-4), p.312-316

2001

Volltextzugriff (PDF)

On the influence of gas inlet configuration with respect to homogeneity in a horizontal single wafer MOVPE reactor

Journal of crystal growth, 2001-02, Vol.223 (1), p.15-20

2001

Volltextzugriff (PDF)

Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor

Journal of crystal growth, 2000, Vol.208 (1-4), p.85-92

2000

Volltextzugriff (PDF)

Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals

Materials science forum, 2001-01, Vol.353-356, p.65-68

2001

Volltextzugriff (PDF)

Advanced mathematical models for simulation of radiative heat transfer in CVD reactors

Journal of crystal growth, 1997-03, Vol.172 (3), p.389-395

1997

Volltextzugriff (PDF)

A multigrid solver for fluid flow and mass transfer coupled with grey-body surface radiation for the numerical simulation of chemical vapor deposition processes

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.202-208

1995

Volltextzugriff (PDF)

Heat transfer and mass transport in a multiwafer MOVPE reactor: modelling and experimental studies

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.66-71

1997

Volltextzugriff (PDF)

Numerical study of grey-body surface radiation coupled with fluid flow for general geometries using a finite volume multigrid solver

International journal of numerical methods for heat & fluid flow, 1996-05, Vol.6 (3), p.3-18

1996

Volltextzugriff (PDF)

Process optimisation of MOVPE growth by numerical modelling of transport phenomena including thermal radiation

Journal of crystal growth, 1997-10, Vol.180 (3-4), p.660-669

1997

Volltextzugriff (PDF)

Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions

Materials science forum, 2001-01, Vol.353-356, p.15-20

2001

Volltextzugriff (PDF)

1 – 25 von 52

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(46)
Mit Volltextzugriff
(51)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

On the way to airborne gravelometry based on 3D spatial data derived from images

On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters

3D unsteady and steady modeling of heat and mass transfer during Cz Si crystal growth with a horizontal magnetic field

Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors

Global modeling of the SiC sublimation growth process: prediction of thermoelastic stress and control of growth conditions

Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors

Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT

Modeling and experimental verification of deposition behavior during AlGaAs growth: a comparison for the carrier gases N 2 and H 2

Modeling and experimental verification of deposition behavior during AlGaAs growth : a comparison for the carrier gases N2 and H2

Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors

In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging

Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors

Kinetics of SiGe chemical vapor deposition from chloride precursors

Numerical simulation of global heat transfer in reactors for SiC bulk crystal growth by physical vapor transport

A numerical approach for the solution of coupled fluid–solid and thermal stress problems in crystal growth processes

Impact of source material on silicon carbide vapor transport growth process

On the influence of gas inlet configuration with respect to homogeneity in a horizontal single wafer MOVPE reactor

Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor

Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals

Advanced mathematical models for simulation of radiative heat transfer in CVD reactors

A multigrid solver for fluid flow and mass transfer coupled with grey-body surface radiation for the numerical simulation of chemical vapor deposition processes

Heat transfer and mass transport in a multiwafer MOVPE reactor: modelling and experimental studies

Numerical study of grey-body surface radiation coupled with fluid flow for general geometries using a finite volume multigrid solver

Process optimisation of MOVPE growth by numerical modelling of transport phenomena including thermal radiation

Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions

Suchergebnisse filtern