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The response of high barrier Schottky diodes to light illumination

Journal of materials science. Materials in electronics, 2021-02, Vol.32 (4), p.4448-4456

2021

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The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements

The Journal of physics and chemistry of solids, 2020-09, Vol.144, p.109523, Article 109523

2020

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Effect of illumination on electrical parameters of Au/(P3DMTFT)/n-GaAs Schottky barrier diodes

Indian journal of physics, 2020-12, Vol.94 (12), p.1901-1908

2020

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The interfacial properties of Au/n-4H-SiC structure with (Zn-doped PVA) interfacial layer

Physica scripta, 2020-11, Vol.95 (11), p.115809

2020

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A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy methods

Bulletin of materials science, 2018-06, Vol.41 (3), p.82, Article 82

2018

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Temperature effects on the electrical characteristics of Al/PTh-SiO2/p-Si structure

Bulletin of materials science, 2017-12, Vol.40 (7), p.1435-1439

2017

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Investigation of Dielectric Properties, Electric Modulus and Conductivity of the Au/Zn-Doped PVA/n-4H-SiC (MPS) Structure Using Impedance Spectroscopy Method

Zeitschrift für physikalische Chemie (Neue Folge), 2020-03, Vol.234 (3), p.505-516

2020

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The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes

SILICON, 2019-12, Vol.11 (6), p.2647-2657

2019

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Electrical properties of Al/conducting polymer (P2ClAn)/p-Si/Al contacts

Synthetic metals, 2009-07, Vol.159 (14), p.1427-1432

2009

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Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes

Microelectronic engineering, 2012-10, Vol.98, p.6-11

2012

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Detection and Identification of Vehicles Based on Their Spark-Free Unintended Electromagnetic Emissions

IEEE transactions on electromagnetic compatibility, 2018-10, Vol.60 (5), p.1594-1597

2018

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Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ Al / PTh - SiO 2 / p - Si structure

Bulletin of materials science, 2017-12, Vol.40 (7), p.1435-1439

2017

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Analysis of current-voltage and capacitance―voltage―frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer

Thin solid films, 2011-07, Vol.519 (18), p.6004-6009

2011

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Solution of the Inverse Electromagnetic Problem of Spontaneous Potential (SP) by Very Fast Simulated Reannealing (VFSR)

Advances in Natural Computation, 2005, p.618-621

2005

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Interfacial layer thickness dependent electrical characteristics of Au/(Zn-doped PVA)/ n -4H-SiC (MPS) structures at room temperature

European physical journal. Applied physics, 2017-10, Vol.80 (1), p.10101

2017

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Schottky diyot parametrelerini belirlemede kullanılan metotların geniş bir sıcaklık aralığı için kıyaslanması

Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2017-12, p.1-1

2017

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Analysis of current–voltage and capacitance–voltage-frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO 2 nanocomposite interfacial layer

Thin solid films, 2011, Vol.519 (18), p.6004-6009

2011

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Yb/p-Si Schottky Diyotlarının Elektriksel Karakteristiklerinin İncelenmesi

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2019-09, Vol.9 (3), p.1385-1394

2019

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A quantum wavepacket study of three-dimensional Ne-H+ 2 scattering

Molecular physics, 2003-06, Vol.101 (12), p.1901-1909

2003

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Equilibrium properties of a spin-1 Ising system with bilinear, biquadratic and odd interactions

Physica A, 1996-10, Vol.231 (4), p.673-686

1996

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Time-dependent quantum study of three-dimensional inelastic scattering of I–H 2

Journal of molecular structure. Theochem, 2002-04, Vol.584 (1-3), p.149-157

2002

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Nuclear matrix elements of double beta decay in deformed nuclei

Turkish journal of physics, 2003, Vol.27 (3), p.187-193

2003

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Equilibrium Properties of the Spin-1 Ising System with Bilinear, Biquadratic and Odd Interactions

Turkish journal of physics, 1996-01, Vol.20 (1), p.90-91

1996

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The investigation of current-conduction mechanisms (CCMs) in Au/ (0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (I-V-T) measurements

Materials science in semiconductor processing, 2018-10, Vol.85, p.98-105

2018

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The response of high barrier Schottky diodes to light illumination

The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements

Effect of illumination on electrical parameters of Au/(P3DMTFT)/n-GaAs Schottky barrier diodes

The interfacial properties of Au/n-4H-SiC structure with (Zn-doped PVA) interfacial layer

A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy methods

Temperature effects on the electrical characteristics of Al/PTh-SiO2/p-Si structure

Investigation of Dielectric Properties, Electric Modulus and Conductivity of the Au/Zn-Doped PVA/n-4H-SiC (MPS) Structure Using Impedance Spectroscopy Method

The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes

Electrical properties of Al/conducting polymer (P2ClAn)/p-Si/Al contacts

Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes

Detection and Identification of Vehicles Based on Their Spark-Free Unintended Electromagnetic Emissions

Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ Al / PTh - SiO 2 / p - Si structure

Analysis of current-voltage and capacitance―voltage―frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer

Solution of the Inverse Electromagnetic Problem of Spontaneous Potential (SP) by Very Fast Simulated Reannealing (VFSR)

Interfacial layer thickness dependent electrical characteristics of Au/(Zn-doped PVA)/ n -4H-SiC (MPS) structures at room temperature

Schottky diyot parametrelerini belirlemede kullanılan metotların geniş bir sıcaklık aralığı için kıyaslanması

Analysis of current–voltage and capacitance–voltage-frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO 2 nanocomposite interfacial layer

Yb/p-Si Schottky Diyotlarının Elektriksel Karakteristiklerinin İncelenmesi

A quantum wavepacket study of three-dimensional Ne-H+ 2 scattering

Equilibrium properties of a spin-1 Ising system with bilinear, biquadratic and odd interactions

Time-dependent quantum study of three-dimensional inelastic scattering of I–H 2

Nuclear matrix elements of double beta decay in deformed nuclei

Equilibrium Properties of the Spin-1 Ising System with Bilinear, Biquadratic and Odd Interactions

The investigation of current-conduction mechanisms (CCMs) in Au/ (0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (I-V-T) measurements

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