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Fast-neutron-induced and as-grown structural defects in magnesium aluminate spinel crystals with different stoichiometry

Optical materials, 2019-05, Vol.91, p.42-49

2019

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Time-resolved spectroscopy of exciton states in single crystals and single crystalline films of YAlO3 and YAlO3: Ce

Journal of physics. D, Applied physics, 2011-08, Vol.44 (31)

2011

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Trapped-hole centers in MgO single crystals

Physics of the solid state, 2011-06, Vol.53 (6), p.1244-1252

2011

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Low-temperature excitonic, electron–hole and interstitial-vacancy processes in LiF single crystals

Journal of physics. Condensed matter, 2006-01, Vol.18 (2), p.379-394

2006

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Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface

Thin solid films, 2010-02, Vol.518 (9), p.2374-2376

2010

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Impurity interaction with point defects in the Si–SiO2 structures and its influence on the interface properties

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-10, Vol.134 (2-3), p.222-226

2006

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Thermoluminescence Centres Created Selectively in MgO Crystals by Fast Neutrons

Radiation protection dosimetry, 2002-01, Vol.100 (1-4), p.127-130

2002

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Elaboration and characterization of organic/inorganic hybrid nanoporous material incorporating Keggin-type Mo-Si polyanions

Journal of physics. Conference series, 2007-12, Vol.93 (1), p.012011

2007

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Electron and hole traps in yttrium orthosilicate single crystals: The critical role of Si-unbound oxygen

Physical review. B, Condensed matter and materials physics, 2014-08, Vol.90 (6), Article 064104

2014

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Electron paramagnetic resonance of the [Be]+ centre in MgO:Be

Journal of physics. Condensed matter, 2003-10, Vol.15 (40), p.6871-6878

2003

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Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formation

Thin solid films, 2004-07, Vol.459 (1-2), p.53-57

2004

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On the kinetics of the generation of point defects in the Si-SiO2 system

Applied physics. A, Materials science & processing, 1996-05, Vol.62 (5), p.469-472

1996

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Luminescence of [Be]+ centre in MgO:Be

Radiation measurements, 2004-08, Vol.38 (4-6), p.699-702

2004

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Electron and hole traps in X-ray irradiated Y2SiO5 and Lu2SiO5 crystals

physica status solidi (b), 2014-04, Vol.251 (4), p.741-747

2014

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VOH−Be—a new and unusual member in the family of V centres

Journal of physics. Condensed matter, 2002-09, Vol.14 (38), p.8881-8888

2002

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Anion interstitials in neutron-irradiated MgO single crystals

Radiation measurements, 2001-10, Vol.33 (5), p.625-628

2001

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Electronic excitations and defect creation in wide-gap MgO and Lu3Al5O12 crystals irradiated with swift heavy ions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-09, Vol.286, p.200-208

2012

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Electron and hole traps in X-ray irradiated Y 2 SiO 5 and Lu 2 SiO 5 crystals: Electron and hole traps in X-ray irradiated Y 2 SiO 5 and Lu 2 SiO 5

physica status solidi (b), 2014-04, Vol.251 (4), p.741-747

2014

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Interaction between point defects, extended defects and impurities in the Si–SiO2 system during the process of its formation

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114-115, p.295-298

2004

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On the origin of cerium-related centres in lead-containing single crystalline films of Y2SiO5 : Ce and Lu2SiO5 : Ce

Journal of physics. D, Applied physics, 2014-02, Vol.47 (6)

2014

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Retrospective Dosimetry for Latvian Workers at Chernobyl

Radiation protection dosimetry, 2001-01, Vol.96 (1-3), p.237-240

2001

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Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 single crystals

Journal of luminescence, 2015-03, Vol.159, p.229-237

2015

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On the origin of cerium-related centres in lead-containing single crystalline films of Y 2 SiO 5 : Ce and Lu 2 SiO 5 : Ce

Journal of physics. D, Applied physics, 2014-02, Vol.47 (6), p.65303

2014

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Multiplication of electron–hole pairs in MgO crystals and ceramics

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1998-05, Vol.141 (1), p.431-435

1998

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Interaction between point defects in the Si–SiO2 system during the process of its formation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002-01, Vol.186 (1-4), p.78-82

2002

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Fast-neutron-induced and as-grown structural defects in magnesium aluminate spinel crystals with different stoichiometry

Time-resolved spectroscopy of exciton states in single crystals and single crystalline films of YAlO3 and YAlO3: Ce

Trapped-hole centers in MgO single crystals

Low-temperature excitonic, electron–hole and interstitial-vacancy processes in LiF single crystals

Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface

Impurity interaction with point defects in the Si–SiO2 structures and its influence on the interface properties

Thermoluminescence Centres Created Selectively in MgO Crystals by Fast Neutrons

Elaboration and characterization of organic/inorganic hybrid nanoporous material incorporating Keggin-type Mo-Si polyanions

Electron and hole traps in yttrium orthosilicate single crystals: The critical role of Si-unbound oxygen

Electron paramagnetic resonance of the [Be]+ centre in MgO:Be

Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formation

On the kinetics of the generation of point defects in the Si-SiO2 system

Luminescence of [Be]+ centre in MgO:Be

Electron and hole traps in X-ray irradiated Y2SiO5 and Lu2SiO5 crystals

VOH−Be—a new and unusual member in the family of V centres

Anion interstitials in neutron-irradiated MgO single crystals

Electronic excitations and defect creation in wide-gap MgO and Lu3Al5O12 crystals irradiated with swift heavy ions

Electron and hole traps in X-ray irradiated Y 2 SiO 5 and Lu 2 SiO 5 crystals: Electron and hole traps in X-ray irradiated Y 2 SiO 5 and Lu 2 SiO 5

Interaction between point defects, extended defects and impurities in the Si–SiO2 system during the process of its formation

On the origin of cerium-related centres in lead-containing single crystalline films of Y2SiO5 : Ce and Lu2SiO5 : Ce

Retrospective Dosimetry for Latvian Workers at Chernobyl

Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 single crystals

On the origin of cerium-related centres in lead-containing single crystalline films of Y 2 SiO 5 : Ce and Lu 2 SiO 5 : Ce

Multiplication of electron–hole pairs in MgO crystals and ceramics

Interaction between point defects in the Si–SiO2 system during the process of its formation

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