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Origin of the different reconstructions of diamond, Si, and Ge(111) surfaces

Physical review letters, 2001-07, Vol.87 (1), p.016103-016103, Article 016103

2001

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Electronic properties of cubic and hexagonal SiC polytypes from ab initio calculations

Physical review. B, Condensed matter, 1994-10, Vol.50 (15), p.10761-10768

1994

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Heterocrystalline structures: New types of superlattices?

Physical review letters, 1995-09, Vol.75 (11), p.2180-2183

1995

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Polytypic transformations in SiC: An ab initio study

Physical review. B, Condensed matter, 1999-11, Vol.60 (19), p.13261-13264

1999

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Dissociative adsorption of formic acid and diffusion of formate on the TiO2(110) surface : the role of hydrogen

Surface science, 2000-08, Vol.461 (1-3), p.191-198

2000

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Novel Reconstruction Mechanism for Dangling-Bond Minimization: Combined Method Surface Structure Determination of SiC ( 111 ) - ( 3 × 3 )

Physical review letters, 1998, Vol.80 (4), p.758-761

1998

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Influence of atomic relaxations on the structural properties of SiC polytypes from ab initio calculations

Physical review. B, Condensed matter, 1994-12, Vol.50 (23), p.17037-17046

1994

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High-precision determination of atomic positions in 4H- and 6H-SiC crystals

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61-62, p.217-220

1999

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Polytypism and Properties of Silicon Carbide

physica status solidi (b), 1997-07, Vol.202 (1), p.35-62

1997

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Extreme softening of Vanderbilt pseudopotentials: General rules and case studies of first-row and d -electron elements

Physical review. B, Condensed matter, 2000-02, Vol.61 (7), p.4576-4587

2000

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Model of the epitaxial growth of SiC-polytypes under surface-stabilized conditions

Journal of electronic materials, 1998-07, Vol.27 (7), p.848-852

1998

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Polytypism and surface structure of SiC

Diamond and related materials, 1997-08, Vol.6 (10), p.1346-1348

1997

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Heterocrystalline SiC: ab initio calculations for the interface structure of combinations of cubic and hexagonal SiC

Applied surface science, 1996-09, Vol.104, p.490-494

1996

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In-induced (4 × 2) reconstructions of GaAs(001) surfaces

Applied surface science, 1998-01, Vol.123-124, p.136-140

1998

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The effect of different transport models in simulation of high frequency 4H-SiC and 6H-SiC vertical MESFETs

Solid-state electronics, 2001-05, Vol.45 (5), p.645-653

2001

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Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure

Materials science & engineering. B, Solid-state materials for advanced technology, 1996-02, Vol.37 (1), p.158-161

1996

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An ab initio Study of Native Defects in Cubic SiC: Vacancies and Stacking Faults

Materials science forum, 1998-01, Vol.264-268, p.283-286

1998

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Ab initio calculation of the atomic and electronic structure for the clean 3C SiC(110) 1 × 1 surface

Surface science, 1994-04, Vol.307, p.989-994

1994

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Full Band Monte Carlo Simulation of Short Channel MOSFETs in 4H and 6H-SiC

MRS proceedings, 1999, Vol.572, Article 69

1999

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First-principle analysis of the dissociative adsorption of formic acid on rutile TiO2(110)

Applied surface science, 2000-10, Vol.166 (1-4), p.370-375

2000

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Vacancy-induced 2x2 reconstruction of the Si-terminated 3C SiC(111) surface: ab initio calculations of the atomic and electronic structure

Surface science, 1995, Vol.331-333, p.1105-1109

1995

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Anomalous weak bonding of Si dimers on the SiC(001) surface?

Surface science, 1997-11, Vol.391 (1), p.L1183-L1187

1997

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Model of the epitaxial growth of SiC-polytypes under surface-stabilized conditons

Journal of electronic materials, 1998-07, Vol.27 (7), p.848-852

1998

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A study of the anisotropic electron transport in 4H and 6H silicon carbide by Monte Carlo simulation

Physica scripta, 1999-01, Vol.1999 (1), p.42

1999

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Characterization of carbon-carbon bonds on the SiC(001)c(2 x 2) surface

Physical review. B, Condensed matter, 1996-10, Vol.54 (15), p.10304-10307

1996

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Origin of the different reconstructions of diamond, Si, and Ge(111) surfaces

Electronic properties of cubic and hexagonal SiC polytypes from ab initio calculations

Heterocrystalline structures: New types of superlattices?

Polytypic transformations in SiC: An ab initio study

Dissociative adsorption of formic acid and diffusion of formate on the TiO2(110) surface : the role of hydrogen

Novel Reconstruction Mechanism for Dangling-Bond Minimization: Combined Method Surface Structure Determination of SiC ( 111 ) - ( 3 × 3 )

Influence of atomic relaxations on the structural properties of SiC polytypes from ab initio calculations

High-precision determination of atomic positions in 4H- and 6H-SiC crystals

Polytypism and Properties of Silicon Carbide

Extreme softening of Vanderbilt pseudopotentials: General rules and case studies of first-row and d -electron elements

Model of the epitaxial growth of SiC-polytypes under surface-stabilized conditions

Polytypism and surface structure of SiC

Heterocrystalline SiC: ab initio calculations for the interface structure of combinations of cubic and hexagonal SiC

In-induced (4 × 2) reconstructions of GaAs(001) surfaces

The effect of different transport models in simulation of high frequency 4H-SiC and 6H-SiC vertical MESFETs

Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure

An ab initio Study of Native Defects in Cubic SiC: Vacancies and Stacking Faults

Ab initio calculation of the atomic and electronic structure for the clean 3C SiC(110) 1 × 1 surface

Full Band Monte Carlo Simulation of Short Channel MOSFETs in 4H and 6H-SiC

First-principle analysis of the dissociative adsorption of formic acid on rutile TiO2(110)

Vacancy-induced 2x2 reconstruction of the Si-terminated 3C SiC(111) surface: ab initio calculations of the atomic and electronic structure

Anomalous weak bonding of Si dimers on the SiC(001) surface?

Model of the epitaxial growth of SiC-polytypes under surface-stabilized conditons

A study of the anisotropic electron transport in 4H and 6H silicon carbide by Monte Carlo simulation

Characterization of carbon-carbon bonds on the SiC(001)c(2 x 2) surface

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