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Te-based chalcogenide materials for selector applications

Scientific reports, 2017-08, Vol.7 (1), p.8103-12, Article 8103

2017

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Reduced mitophagy is an early feature of NAFLD and liver-specific PARKIN knockout hastens the onset of steatosis, inflammation and fibrosis

Scientific reports, 2023-05, Vol.13 (1), p.7575-13, Article 7575

2023

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Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

Applied physics letters, 2014-03, Vol.104 (9)

2014

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Switching mechanism in two-terminal vanadium dioxide devices

Nanotechnology, 2015-04, Vol.26 (16), p.165202-165202

2015

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Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

Journal of applied physics, 2010-01, Vol.107 (2), p.024512-024512-7

2010

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Transport spectroscopy of a single dopant in a gated silicon nanowire

Physical review letters, 2006-11, Vol.97 (20), p.206805-206805, Article 206805

2006

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Rapid prototyping of PMMA-based microfluidic spheroid-on-a-chip models using micromilling and vapour-assisted thermal bonding

Scientific reports, 2024-02, Vol.14 (1), p.2831-2831, Article 2831

2024

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Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories

Nanoscale, 2016-07, Vol.8 (29), p.13915-13923

2016

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Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

Applied physics letters, 2015-02, Vol.106 (5)

2015

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Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

Applied physics letters, 2010-12, Vol.97 (24)

2010

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Application of ANFIS in the preparation of expert opinions and evaluation of building design variants in the context of processing large amounts of data

Automation in construction, 2022-01, Vol.133, p.104045, Article 104045

2022

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Impact of Line-Edge Roughness on FinFET Matching Performance

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2466-2474

2007

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Analysis of the parasitic S/D resistance in multiple-gate FETs

IEEE transactions on electron devices, 2005-06, Vol.52 (6), p.1132-1140

2005

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Neuronal exosomes transport an miRISC cargo to preserve stem cell integrity during energy stress

Cell reports (Cambridge), 2024-10, Vol.43 (10), p.114851, Article 114851

2024

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Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability

Applied physics letters, 2014-06, Vol.104 (23)

2014

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Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

Applied physics letters, 2014-02, Vol.104 (8)

2014

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H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells

Journal of applied physics, 2015-03, Vol.117 (12)

2015

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Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

Applied physics letters, 2011-08, Vol.99 (5)

2011

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Operating-Current Dependence of the Cu-Mobility Requirements in Oxide-Based Conductive-Bridge RAM

IEEE electron device letters, 2015-08, Vol.36 (8), p.775-777

2015

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Sub-10 nm low current resistive switching behavior in hafnium oxide stack

Applied physics letters, 2016-03, Vol.108 (12)

2016

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Role of public transport in the development of cities and regions

Scientific Papers of Silesian University of Technology Organization and Management Series, 2024, Vol.192 (2024)

Jurczak, M

2024

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Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2363-2368

2009

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Scalability of valence change memory: From devices to tip-induced filaments

AIP advances, 2016-08, Vol.6 (8), p.085009-085009-6

2016

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Impact of LER and Random Dopant Fluctuations on FinFET Matching Performance

IEEE transactions on nanotechnology, 2008-05, Vol.7 (3), p.291-298

2008

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High- k dielectrics for future generation memory devices (Invited Paper)

Microelectronic engineering, 2009-07, Vol.86 (7), p.1789-1795

2009

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Te-based chalcogenide materials for selector applications

Reduced mitophagy is an early feature of NAFLD and liver-specific PARKIN knockout hastens the onset of steatosis, inflammation and fibrosis

Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

Switching mechanism in two-terminal vanadium dioxide devices

Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

Transport spectroscopy of a single dopant in a gated silicon nanowire

Rapid prototyping of PMMA-based microfluidic spheroid-on-a-chip models using micromilling and vapour-assisted thermal bonding

Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories

Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

Application of ANFIS in the preparation of expert opinions and evaluation of building design variants in the context of processing large amounts of data

Impact of Line-Edge Roughness on FinFET Matching Performance

Analysis of the parasitic S/D resistance in multiple-gate FETs

Neuronal exosomes transport an miRISC cargo to preserve stem cell integrity during energy stress

Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability

Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

Operating-Current Dependence of the Cu-Mobility Requirements in Oxide-Based Conductive-Bridge RAM

Sub-10 nm low current resistive switching behavior in hafnium oxide stack

Role of public transport in the development of cities and regions

Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells

Scalability of valence change memory: From devices to tip-induced filaments

Impact of LER and Random Dopant Fluctuations on FinFET Matching Performance

High- k dielectrics for future generation memory devices (Invited Paper)

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