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A 16Gb/s/pin 8Gb GDDR6 DRAM with bandwidth extension techniques for high-speed applications

2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, p.210-212

2018

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A 16Gb 1.2V 3.2Gb/s/pin DDR4 SDRAM with improved power distribution and repair strategy

2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, p.212-214

2018

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A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3[Formula Omitted]) and a Resolution FoM of 0.43 pJ[Formula Omitted]K[Formula Omitted] in 65-nm CMOS

IEEE journal of solid-state circuits, 2018-12, Vol.53 (12), p.3356

2018

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A 1.3-4-GHz Quadrature-Phase Digital DLL Using Sequential Delay Control and Reconfigurable Delay Line

IEEE journal of solid-state circuits, 2021-06, Vol.56 (6), p.1886-1896

2021

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A 1ynm 1.25V 8Gb, 16Gb/s/pin GDDR6-based Accelerator-in-Memory supporting 1TFLOPS MAC Operation and Various Activation Functions for Deep-Learning Applications

2022 IEEE International Solid- State Circuits Conference (ISSCC), 2022, Vol.65, p.1-3

2022

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A 1ynm 1.25V 8Gb 16Gb/s/Pin GDDR6-Based Accelerator-in-Memory Supporting 1TFLOPS MAC Operation and Various Activation Functions for Deep Learning Application

IEEE journal of solid-state circuits, 2023-01, Vol.58 (1), p.291-302

2023

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A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3 \sigma ) and a Resolution FoM of 0.43 pJ \cdot K ^ in 65-nm CMOS

IEEE journal of solid-state circuits, 2018-12, Vol.53 (12), p.3356-3367

2018

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A 1.1-V 10-nm Class 6.4-Gb/s/Pin 16-Gb DDR5 SDRAM With a Phase Rotator-ILO DLL, High-Speed SerDes, and DFE/FFE Equalization Scheme for Rx/Tx

IEEE journal of solid-state circuits, 2020-01, Vol.55 (1), p.167-177

2020

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A 24-Gb/s/Pin 8-Gb GDDR6 With a Half-Rate Daisy-Chain-Based Clocking Architecture and I/O Circuitry for Low-Noise Operation

IEEE journal of solid-state circuits, 2022-01, Vol.57 (1), p.212-223

2022

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Process-Portable and Programmable Layout Generation of Digital Circuits in Advanced DRAM Technologies

2021 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2021, p.721-722

2021

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A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization

2022 IEEE International Solid- State Circuits Conference (ISSCC), 2022, Vol.65, p.444-446

2022

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A 0.53pJK2 7000μm2 resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS

2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, p.322-324

2018

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25.1 A 24Gb/s/pin 8Gb GDDR6 with a Half-Rate Daisy-Chain-Based Clocking Architecture and IO Circuitry for Low-Noise Operation

2021 IEEE International Solid- State Circuits Conference (ISSCC), 2021, Vol.64, p.344-346

2021

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23.4 A 512GB 1.1V Managed DRAM Solution with 16GB ODP and Media Controller

2019 IEEE International Solid- State Circuits Conference - (ISSCC), 2019, p.384-386

2019

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23.2 A 1.1V 1ynm 6.4Gb/s/pin 16Gb DDR5 SDRAM with a Phase-Rotator-Based DLL, High-Speed SerDes and RX/TX Equalization Scheme

2019 IEEE International Solid- State Circuits Conference - (ISSCC), 2019, p.380-382

2019

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22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST

2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020, p.334-336

2020

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Memory-Centric Computing with SK Hynix's Domain-Specific Memory

2023 IEEE Hot Chips 35 Symposium (HCS), 2023, p.1-26

2023

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System Architecture and Software Stack for GDDR6-AiM

2022 IEEE Hot Chips 34 Symposium (HCS), 2022, p.1-25

2022

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Microstructural characterization of gadolinium-rich phases in titanium alloys

Heliyon, 2024-08, Vol.10 (15), p.e34935, Article e34935

2024

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Global DNA Methylation in the Chestnut Blight Fungus Cryphonectria parasitica and Genome-Wide Changes in DNA Methylation Accompanied with Sectorization

Frontiers in plant science, 2018-02, Vol.9, p.103-103

2018

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Uniformity of neutron absorber distribution in Gd-containing neutron absorber materials

Annals of nuclear energy, 2024-04, Vol.198, p.110288, Article 110288

2024

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Leaking Fluids

Advances in Visual Computing, 2008, p.1135-1143

2008

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A 16Gb/s/pin 8Gb GDDR6 DRAM with bandwidth extension techniques for high-speed applications

A 16Gb 1.2V 3.2Gb/s/pin DDR4 SDRAM with improved power distribution and repair strategy

A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3[Formula Omitted]) and a Resolution FoM of 0.43 pJ[Formula Omitted]K[Formula Omitted] in 65-nm CMOS

A 1.3-4-GHz Quadrature-Phase Digital DLL Using Sequential Delay Control and Reconfigurable Delay Line

A 1ynm 1.25V 8Gb, 16Gb/s/pin GDDR6-based Accelerator-in-Memory supporting 1TFLOPS MAC Operation and Various Activation Functions for Deep-Learning Applications

A 1ynm 1.25V 8Gb 16Gb/s/Pin GDDR6-Based Accelerator-in-Memory Supporting 1TFLOPS MAC Operation and Various Activation Functions for Deep Learning Application

A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3 \sigma ) and a Resolution FoM of 0.43 pJ \cdot K ^ in 65-nm CMOS

A 1.1-V 10-nm Class 6.4-Gb/s/Pin 16-Gb DDR5 SDRAM With a Phase Rotator-ILO DLL, High-Speed SerDes, and DFE/FFE Equalization Scheme for Rx/Tx

A 24-Gb/s/Pin 8-Gb GDDR6 With a Half-Rate Daisy-Chain-Based Clocking Architecture and I/O Circuitry for Low-Noise Operation

Process-Portable and Programmable Layout Generation of Digital Circuits in Advanced DRAM Technologies

A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization

A 0.53pJK2 7000μm2 resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS

25.1 A 24Gb/s/pin 8Gb GDDR6 with a Half-Rate Daisy-Chain-Based Clocking Architecture and IO Circuitry for Low-Noise Operation

23.4 A 512GB 1.1V Managed DRAM Solution with 16GB ODP and Media Controller

23.2 A 1.1V 1ynm 6.4Gb/s/pin 16Gb DDR5 SDRAM with a Phase-Rotator-Based DLL, High-Speed SerDes and RX/TX Equalization Scheme

22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST

Memory-Centric Computing with SK Hynix's Domain-Specific Memory

System Architecture and Software Stack for GDDR6-AiM

Microstructural characterization of gadolinium-rich phases in titanium alloys

Global DNA Methylation in the Chestnut Blight Fungus Cryphonectria parasitica and Genome-Wide Changes in DNA Methylation Accompanied with Sectorization

Uniformity of neutron absorber distribution in Gd-containing neutron absorber materials

Leaking Fluids

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