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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

IEEE electron device letters, 2008-04, Vol.29 (4), p.287-289

2008

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IEEE_Xplore

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.132-140

2011

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IEEE_Xplore

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2895-2901

2009

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IEEE_Xplore

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

Applied physics letters, 2022-02, Vol.120 (8)

2022

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A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Microelectronics and reliability, 2010-06, Vol.50 (6), p.767-773

2010

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TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

IEEE electron device letters, 2008-10, Vol.29 (10), p.1098-1100

2008

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IEEE_Xplore

Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

Microelectronics and reliability, 2011-02, Vol.51 (2), p.201-206

2011

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High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

Microelectronics and reliability, 2010-06, Vol.50 (6), p.758-762

2010

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Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2667-2674

2012

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IEEE_Xplore

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

Applied physics letters, 2009-07, Vol.95 (3), p.033510-033510-3

2009

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Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors

2011 International Reliability Physics Symposium, 2011, p.4E.3.1-4E.3.4

2011

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IEEE_Xplore

A systems engineering approach to collaborative coordination of UAS in the NAS with safety guarantees

2014 Integrated Communications, Navigation and Surveillance Conference (ICNS) Conference Proceedings, 2014, p.U1-1-U1-12

2014

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IEEE_Xplore

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (23)

2010

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Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3132-3138

2017

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IEEE_Xplore

Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.890-895

2019

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IEEE_Xplore

Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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IEEE_Xplore

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2012-04, Vol.100 (17), p.172109-172109-3

2012

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A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors

IEEE electron device letters, 2008-07, Vol.29 (7), p.665-667

2008

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IEEE_Xplore

Application reliability validation of GaN power devices

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.20.5.1-20.5.4

2016

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IEEE_Xplore

Traps and defects in pre- and post- stressed AlGaN-GaN high electron mobility transistors

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1611-1613

2011

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Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors

2008 IEEE International Electron Devices Meeting, 2008, p.1-4

2008

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IEEE_Xplore

Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors

2007 IEEE International Electron Devices Meeting, 2007, p.385-388

2007

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IEEE_Xplore

Impact of gate placement on RF power degradation in GaN high electron mobility transistors

Microelectronics and reliability, 2012, Vol.52 (1), p.33-38

2012

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Evolution of structural defects associated with electrical degradationin AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (23), p.233509-233509-3

2010

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RF power degradation of GaN High Electron Mobility Transistors

2010 International Electron Devices Meeting, 2010, p.20.2.1-20.2.4

2010

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IEEE_Xplore

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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors

A systems engineering approach to collaborative coordination of UAS in the NAS with safety guarantees

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors

Application reliability validation of GaN power devices

Traps and defects in pre- and post- stressed AlGaN-GaN high electron mobility transistors

Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors

Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors

Impact of gate placement on RF power degradation in GaN high electron mobility transistors

Evolution of structural defects associated with electrical degradationin AlGaN/GaN high electron mobility transistors

RF power degradation of GaN High Electron Mobility Transistors

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