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Master equation study of excitonic processes limiting the luminous efficacy in phosphorescent organic light-emitting diodes

Journal of applied physics, 2019-04, Vol.125 (16)

2019

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Studying the switching variability in redox-based resistive switching devices

Journal of computational electronics, 2020-12, Vol.19 (4), p.1426-1432

2020

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Transient Simulation of Current and Electrophosphorescence in Organic Light-Emitting Diodes Using the Master Equation

IEEE transactions on electron devices, 2019-07, Vol.66 (7), p.3012-3019

2019

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IEEE_Xplore

A numerical approach to quasi-ballistic transport and plasma oscillations in junctionless nanowire transistors

Journal of computational electronics, 2020-09, Vol.19 (3), p.975-986

2020

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Simulation of THz Oscillations in Semiconductor Devices Based on Balance Equations

Journal of scientific computing, 2020, Vol.85 (1), p.6-6, Article 6

2020

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Numerical aspects of a Godunov-type stabilization scheme for the Boltzmann transport equation

Journal of computational electronics, 2022-02, Vol.21 (1), p.153-168

2022

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Deterministic Solvers for the Boltzmann Transport Equation

1. Aufl., 2011

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High-frequency noise in nanoscale metal oxide semiconductor field effect transistors

Journal of applied physics, 2007-06, Vol.101 (12), p.124501-124501-8

2007

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A self-consistent solution of the Poisson, Schrödinger and Boltzmann equations by a full Newton-Raphson approach for nanoscale semiconductor devices

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013, p.356-359

2013

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IEEE_Xplore

Device Modeling for Admittance Spectroscopy of PMOSFETs at Cryogenic Temperatures

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.1-7

2024

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IEEE_Xplore

Microscopic Simulation of the RF Performance of SiGe HBTs With Additional Uniaxial Mechanical Stress

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4803-4809

2022

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IEEE_Xplore

Investigation of the Large Variability of HfO 2 ‐Based Resistive Random Access Memory Devices with a Small Current Compliance by a Kinetic Monte Carlo Model

Physica status solidi. A, Applications and materials science, 2023-11

2023

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Simulation of electronic noise in disordered organic semiconductor devices based on the master equation

Journal of computational electronics, 2015-03, Vol.14 (1), p.37-42

Jungemann, Christoph

2015

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A deterministic method study of the impact of the Pauli principle in double-gate MOSFETs

Chinese physics B, 2012-11, Vol.21 (11), p.523-527

赵凯 Christoph Jungemann 刘晓彦

2012

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RF analysis and noise characterization of junctionless nanowire FETs by a Boltzmann transport equation solver

Journal of computational electronics, 2019-12, Vol.18 (4), p.1347-1353

2019

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A Godunov-Type Stabilization Scheme for Large-Signal Simulations of a THz Nanowire Transistor Based on the Boltzmann Equation

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5407-5413

2021

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IEEE_Xplore

Microscopic simulation of RF noise in junctionless nanowire transistors

Journal of computational electronics, 2018-09, Vol.17 (3), p.986-993

2018

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Investigation of moments-based transport models applied to plasma waves and the Dyakonov-Shur instability

Semiconductor science and technology, 2019-01, Vol.34 (1), p.14002

2019

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Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers-Part I: Simulation Tools and Application to Sample Structures

IEEE transactions on electron devices, 2023-10, Vol.70 (10), p.1-8

2023

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IEEE_Xplore

Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers-Part II: Application and Results

IEEE transactions on electron devices, 2023-10, Vol.70 (10), p.1-8

2023

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IEEE_Xplore

Investigation of the Dyakonov-Shur instability for THz wave generation based on the Boltzmann transport equation

Semiconductor science and technology, 2018-10, Vol.33 (10), p.104001

2018

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Stabilization of the Time-Dependent Drift-Diffusion Model for Fermi-Dirac Statistics

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.265-268

2023

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An Accurate kp Approximation of the Empirical Pseudopotential Hamiltonian for Confined States in Silicon Double Gate MOSFETs

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.269-272

2023

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A Godunov-type stabilization scheme for the Boltzmann transport equation of III-V devices with a 3D k-space

Journal of computational electronics, 2024-02, Vol.23 (1), p.1-11

2024

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Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full Bias Space: Implications and Peculiarities

IEEE transactions on electron devices, 2020-08, Vol.67 (8), p.3315-3322

2020

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Master equation study of excitonic processes limiting the luminous efficacy in phosphorescent organic light-emitting diodes

Studying the switching variability in redox-based resistive switching devices

Transient Simulation of Current and Electrophosphorescence in Organic Light-Emitting Diodes Using the Master Equation

A numerical approach to quasi-ballistic transport and plasma oscillations in junctionless nanowire transistors

Simulation of THz Oscillations in Semiconductor Devices Based on Balance Equations

Numerical aspects of a Godunov-type stabilization scheme for the Boltzmann transport equation

Deterministic Solvers for the Boltzmann Transport Equation

High-frequency noise in nanoscale metal oxide semiconductor field effect transistors

A self-consistent solution of the Poisson, Schrödinger and Boltzmann equations by a full Newton-Raphson approach for nanoscale semiconductor devices

Device Modeling for Admittance Spectroscopy of PMOSFETs at Cryogenic Temperatures

Microscopic Simulation of the RF Performance of SiGe HBTs With Additional Uniaxial Mechanical Stress

Investigation of the Large Variability of HfO 2 ‐Based Resistive Random Access Memory Devices with a Small Current Compliance by a Kinetic Monte Carlo Model

Simulation of electronic noise in disordered organic semiconductor devices based on the master equation

A deterministic method study of the impact of the Pauli principle in double-gate MOSFETs

RF analysis and noise characterization of junctionless nanowire FETs by a Boltzmann transport equation solver

A Godunov-Type Stabilization Scheme for Large-Signal Simulations of a THz Nanowire Transistor Based on the Boltzmann Equation

Microscopic simulation of RF noise in junctionless nanowire transistors

Investigation of moments-based transport models applied to plasma waves and the Dyakonov-Shur instability

Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers-Part I: Simulation Tools and Application to Sample Structures

Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers-Part II: Application and Results

Investigation of the Dyakonov-Shur instability for THz wave generation based on the Boltzmann transport equation

Stabilization of the Time-Dependent Drift-Diffusion Model for Fermi-Dirac Statistics

An Accurate kp Approximation of the Empirical Pseudopotential Hamiltonian for Confined States in Silicon Double Gate MOSFETs

A Godunov-type stabilization scheme for the Boltzmann transport equation of III-V devices with a 3D k-space

Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full Bias Space: Implications and Peculiarities

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