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A 0.25-[micro]m 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1472

2002

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A 0.25 mu m 3.0 V 1T1C 32 Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

Digest of technical papers - IEEE International Solid-State Circuits Conference, 2002-01, p.124-125+430-431

2002

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A 0.25-mum 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1472-1478

2002

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A 0.25-/spl mu/m 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1472-1478

2002

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A 0.25 /spl mu/m 3.0 V 1T1C 32 Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002, Vol.1, p.162-457 vol.1

2002

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A 0.25/spl mu/m 3.0V 1T1C 32Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002, Vol.2, p.124-431

2002

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A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1472-1478

2002

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A 0.3V-V IN , 0.015ps-FoM Fully Integrated Analog-Assisted Digital LDO With Dual-Negative Gate Control and Adaptive Transient Recovery Path

IEEE transactions on power electronics, 2023-01, Vol.38 (1), p.85-89

2023

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A 0.3V-VIN, 0.015ps-FoM Fully Integrated Analog-Assisted Digital LDO with Dual-Negative Gate Control and Adaptive Transient Recovery Path

IEEE transactions on power electronics, 2023-01, Vol.38 (1), p.1-5

2023

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La_{0.7}Sr_{0.3}Cr_{1-x}Ni_{x}O_{3-{\delta}$ Perovskite 촉매의 프로판 수증기 개질 반응에서의 특성 연구

Korean chemical engineering research, 2011, Vol.49 (6), p.715-719

2011

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A 0.8 μm Nonacell for 108 Megapixels CMOS Image Sensor with FD-Shared Dual Conversion Gain and 18,000e- Full-Well Capacitance

2020 IEEE International Electron Devices Meeting (IEDM), 2020, p.16.2.1-16.2.4

2020

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0088 Characteristics of non-hodgkin’s lymphoma patients among a cohort of semiconductor-manufacturing workers

Occupational and environmental medicine (London, England), 2017-08, Vol.74 (Suppl 1), p.A24

2017

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02.23 Translationally controlled tumour protein is a critical therapeutic target for rheumatoid arthritis

Annals of the rheumatic diseases, 2017-03, Vol.76 (Suppl 1), p.A17

2017

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02.23Translationally controlled tumour protein is a critical therapeutic target for rheumatoid arthritis

Annals of the rheumatic diseases, 2017-03, Vol.76 (Suppl 1), p.A17-A18

2017

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0236 Clinicopathologic features of microinvasive cancer compared with DCIS

Breast (Edinburgh), 2009, Vol.18, p.S77-S78

2009

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03-P080 Reciprocal Fgf signalling interactions modulate differentiation of mouse tongue epithelium

Mechanisms of development, 2009-08, Vol.126, p.S90-S90

2009

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03-P103 Morphogenesis and cellular mechanisms in mice molar root development

Mechanisms of development, 2009-08, Vol.126, p.S97-S97

2009

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03-P122 Molecular interactions and cellular events involved in palatal rugae development

Mechanisms of development, 2009-08, Vol.126, p.S102-S103

2009

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0406 Analysis of infectious disease prevalence among semiconductor manufacturing workers with non-hodgkin’s lymphoma

Occupational and environmental medicine (London, England), 2017-08, Vol.74 (Suppl 1), p.A127

2017

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0436: Preoperative Staging of Papillary Thyroid Carcinoma: Comparison of Ultrasonography and Computed Tomography

Ultrasound in medicine & biology, 2009, Vol.35 (8), p.S58-S58

2009

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0537: Analysis of False-Negative Results After US-Guided 14-Gauge Core Needle Breast Biopsy

Ultrasound in medicine & biology, 2009, Vol.35 (8), p.S77-S78

2009

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07.12 Dicam promotes proliferation and hypertrophic differentiation of chondrocyte through indian hedgehog signalling of primary cilia

Annals of the rheumatic diseases, 2017-03, Vol.76 (Suppl 1), p.A72

2017

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07.12Dicam promotes proliferation and hypertrophic differentiation of chondrocyte through indian hedgehog signalling of primary cilia

Annals of the rheumatic diseases, 2017-03, Vol.76 (Suppl 1), p.A72-A72

2017

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0906 Feasibility of measures of sleep, circadian timing and lipid profiles for identifying mild cognitive impairment

Sleep (New York, N.Y.), 2023-05, Vol.46 (Supplement_1), p.A399-A399

2023

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A 1.1V 16Gb DDR5 DRAM with Probabilistic-Aggressor Tracking, Refresh-Management Functionality, Per-Row Hammer Tracking, a Multi-Step Precharge, and Core-Bias Modulation for Security and Reliability Enhancement

2023 IEEE International Solid- State Circuits Conference (ISSCC), 2023, p.1-3

2023

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A 0.25-[micro]m 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

A 0.25 mu m 3.0 V 1T1C 32 Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

A 0.25-mum 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

A 0.25-/spl mu/m 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

A 0.25 /spl mu/m 3.0 V 1T1C 32 Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

A 0.25/spl mu/m 3.0V 1T1C 32Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

A 0.3V-V IN , 0.015ps-FoM Fully Integrated Analog-Assisted Digital LDO With Dual-Negative Gate Control and Adaptive Transient Recovery Path

A 0.3V-VIN, 0.015ps-FoM Fully Integrated Analog-Assisted Digital LDO with Dual-Negative Gate Control and Adaptive Transient Recovery Path

La_{0.7}Sr_{0.3}Cr_{1-x}Ni_{x}O_{3-{\delta}$ Perovskite 촉매의 프로판 수증기 개질 반응에서의 특성 연구

A 0.8 μm Nonacell for 108 Megapixels CMOS Image Sensor with FD-Shared Dual Conversion Gain and 18,000e- Full-Well Capacitance

0088 Characteristics of non-hodgkin’s lymphoma patients among a cohort of semiconductor-manufacturing workers

02.23 Translationally controlled tumour protein is a critical therapeutic target for rheumatoid arthritis

02.23Translationally controlled tumour protein is a critical therapeutic target for rheumatoid arthritis

0236 Clinicopathologic features of microinvasive cancer compared with DCIS

03-P080 Reciprocal Fgf signalling interactions modulate differentiation of mouse tongue epithelium

03-P103 Morphogenesis and cellular mechanisms in mice molar root development

03-P122 Molecular interactions and cellular events involved in palatal rugae development

0406 Analysis of infectious disease prevalence among semiconductor manufacturing workers with non-hodgkin’s lymphoma

0436: Preoperative Staging of Papillary Thyroid Carcinoma: Comparison of Ultrasonography and Computed Tomography

0537: Analysis of False-Negative Results After US-Guided 14-Gauge Core Needle Breast Biopsy

07.12 Dicam promotes proliferation and hypertrophic differentiation of chondrocyte through indian hedgehog signalling of primary cilia

07.12Dicam promotes proliferation and hypertrophic differentiation of chondrocyte through indian hedgehog signalling of primary cilia

0906 Feasibility of measures of sleep, circadian timing and lipid profiles for identifying mild cognitive impairment

A 1.1V 16Gb DDR5 DRAM with Probabilistic-Aggressor Tracking, Refresh-Management Functionality, Per-Row Hammer Tracking, a Multi-Step Precharge, and Core-Bias Modulation for Security and Reliability Enhancement

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