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Evaluation of the Ultimate Strength of the Ultra-High-Performance Fiber-Reinforced Concrete Beams

Applied sciences, 2021-04, Vol.11 (7), p.2951

2021

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Toward Advanced High‐ k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

Advanced materials technologies, 2023-10, Vol.8 (20)

2023

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Flexural Strength and Stiffness of Donut-Type Voided Slab

Applied sciences, 2022-06, Vol.12 (12), p.5782

2022

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Bond Characteristics of a Deformed Steel Bar Embedded in Donut-Type Voided Slab

Applied sciences, 2022-06, Vol.12 (11), p.5666

2022

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Ferroelectric modulation of terahertz waves with graphene/ultrathin-Si:HfO2/Si structures

Applied physics letters, 2015-10, Vol.107 (15)

2015

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Two-Way Flexural Behavior of Donut-Type Voided Slabs

International journal of concrete structures and materials, 2018-12, Vol.12 (1), p.1-13, Article 26

2018

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Study of Metal–Dielectric Interface for Improving Electrical Properties and Reliability of DRAM Capacitor

Advanced materials technologies, 2023-10, Vol.8 (20)

2023

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Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties

Journal of Asian Ceramic Societies, 2022-07, Vol.10 (3), p.649-659

2022

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Investigation of oxygen-related defects and the electrical properties of atomic layer deposited HfO2 films using electron energy-loss spectroscopy

Journal of applied physics, 2011-01, Vol.109 (2)

2011

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HfO2-based ferroelectric modulator of terahertz waves with graphene metamaterial

中国物理B：英文版, 2016-10 (10), p.303-307

蒋然吴正冉韩祖银 Hyung-Suk Jung

2016

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Experimental and Numerical Study on the Compression Behavior of Square Concrete-Filled Steel Tube Stub Columns with Steel Fiber-Reinforced High-Strength Concrete

International Journal of Polymer Science, 2018-01, Vol.2018 (2018), p.1-13

2018

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Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2012-01, Vol.30 (1), p.01A126-01A126-7

2012

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Side-Face Blowout Failure of Large-Diameter High-Strength Headed Bars in Beam-Column Joints

ACI structural journal, 2017-01, Vol.114 (1)

2017

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Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition

Chemistry of materials, 2012-09, Vol.24 (18), p.3534-3543

2012

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Experimental study on the cyclic behavior of steel fiber reinforced high strength concrete columns and evaluation of shear strength

Engineering structures, 2018-02, Vol.157, p.250-267

2018

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Evaluation of punching shear strength of voided slabs considering the effect of the ratio b0/d

Engineering structures, 2018-06, Vol.164, p.70-81

2018

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Contribution of Interface States and Oxide Traps to the Negative Bias Temperature Instability of High- k pMOSFETs

IEEE electron device letters, 2009-03, Vol.30 (3), p.291-293

2009

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Reduction of Electrical Defects in Atomic Layer Deposited HfO2 Films by Al Doping

Chemistry of materials, 2010-07, Vol.22 (14), p.4175-4184

2010

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Monocliniclike local atomic structure in amorphous ZrO2 thin film

Applied physics letters, 2010-10, Vol.97 (14)

2010

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Oxygen vacancy induced charge trapping and positive bias temperature instability in HfO2nMOSFET

Microelectronic engineering, 2007-09, Vol.84 (9-10), p.1934-1937

2007

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Nondestructive investigation of interface states in high-k oxide films on Ge substrate using X-ray absorption spectroscopy

Physica status solidi. PSS-RRL. Rapid research letters, 2012-04, Vol.6 (4), p.181-183

2012

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Impacts of Zr Composition in Hf1-xZrxOy Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.2094-2103

2011

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Improving the Electrical Properties of Lanthanum Silicate Films on Ge Metal Oxide Semiconductor Capacitors by Adopting Interfacial Barrier and Capping Layers

ACS applied materials & interfaces, 2014-05, Vol.6 (10), p.7885-7894

2014

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Effect of Oxygen Postdeposition Annealing on Bias Temperature Instability of Hafnium Silicate MOSFET

IEEE electron device letters, 2008-04, Vol.29 (4), p.399-401

2008

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Dependence of optimized annealing temperature for tetragonal phase formation on the Si concentration of atomic-layer-deposited Hf-silicate film

Journal of applied physics, 2011-12, Vol.110 (11), p.114107-114107-6

2011

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Evaluation of the Ultimate Strength of the Ultra-High-Performance Fiber-Reinforced Concrete Beams

Toward Advanced High‐ k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

Flexural Strength and Stiffness of Donut-Type Voided Slab

Bond Characteristics of a Deformed Steel Bar Embedded in Donut-Type Voided Slab

Ferroelectric modulation of terahertz waves with graphene/ultrathin-Si:HfO2/Si structures

Two-Way Flexural Behavior of Donut-Type Voided Slabs

Study of Metal–Dielectric Interface for Improving Electrical Properties and Reliability of DRAM Capacitor

Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties

Investigation of oxygen-related defects and the electrical properties of atomic layer deposited HfO2 films using electron energy-loss spectroscopy

HfO2-based ferroelectric modulator of terahertz waves with graphene metamaterial

Experimental and Numerical Study on the Compression Behavior of Square Concrete-Filled Steel Tube Stub Columns with Steel Fiber-Reinforced High-Strength Concrete

Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone

Side-Face Blowout Failure of Large-Diameter High-Strength Headed Bars in Beam-Column Joints

Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition

Experimental study on the cyclic behavior of steel fiber reinforced high strength concrete columns and evaluation of shear strength

Evaluation of punching shear strength of voided slabs considering the effect of the ratio b0/d

Contribution of Interface States and Oxide Traps to the Negative Bias Temperature Instability of High- k pMOSFETs

Reduction of Electrical Defects in Atomic Layer Deposited HfO2 Films by Al Doping

Monocliniclike local atomic structure in amorphous ZrO2 thin film

Oxygen vacancy induced charge trapping and positive bias temperature instability in HfO2nMOSFET

Nondestructive investigation of interface states in high-k oxide films on Ge substrate using X-ray absorption spectroscopy

Impacts of Zr Composition in Hf1-xZrxOy Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

Improving the Electrical Properties of Lanthanum Silicate Films on Ge Metal Oxide Semiconductor Capacitors by Adopting Interfacial Barrier and Capping Layers

Effect of Oxygen Postdeposition Annealing on Bias Temperature Instability of Hafnium Silicate MOSFET

Dependence of optimized annealing temperature for tetragonal phase formation on the Si concentration of atomic-layer-deposited Hf-silicate film

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