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Effects of stress on the evolution of Σ-shaped dislocation arrays in a 4H-SiC epitaxial layer

Journal of applied physics, 2021-06, Vol.129 (24)

2021

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Observation of broad triangular Frank-type stacking faults and characterization of stacking faults with emission wavelengths below 430 nm in 4H–SiC epitaxial layers

Applied physics letters, 2024-04, Vol.124 (15)

2024

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Measuring the Internal Quantum Efficiency of Light-Emitting Diodes at an Arbitrary Temperature

IEEE journal of quantum electronics, 2018-04, Vol.54 (2), p.1-6

2018

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Review—Active Efficiency as a Key Parameter for Understanding the Efficiency Droop in InGaN-Based Light-Emitting Diodes

ECS journal of solid state science and technology, 2019-11, Vol.9 (1), p.15013

2019

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Probeless Estimation of Electroluminescence Intensities Based on Photoluminescence Measurements of GaN-Based Light-Emitting Diodes

Current Optics and Photonics, 2021, 5(2), , pp.173-179

2021

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Electrical Leakage Levels Estimated from Luminescence and Photovoltaic Properties under Photoexcitation for GaN-based Light-emitting Diodes

Current Optics and Photonics, 2019, 3(6), , pp.516-521

2019

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Effects of Carrier Leakage on Photoluminescence Properties of GaN-based Light-emitting Diodes at Room Temperature

Current Optics and Photonics, 2019, 3(2), , pp.164-171

2019

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Revisiting stacking fault identification based on the characteristic photoluminescence emission wavelengths of silicon carbide epitaxial wafers

Materials science in semiconductor processing, 2024-06, Vol.175, p.108247, Article 108247

2024

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Probeless Estimation of Electroluminescence Intensities Based on Photoluminescence Measurements of GaN-Based Light-Emitting Diodes

Current optics and photonics, 2021, Vol.5 (2), p.173-179

2021

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Electrical Leakage Levels Estimated from Luminescence and Photovoltaic Properties under Photoexcitation for GaN-based Light-emitting Diodes

Current optics and photonics, 2019, Vol.3 (6), p.516-521

2019

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Effects of Carrier Leakage on Photoluminescence Properties of GaN-based Light-emitting Diodes at Room Temperature

Current optics and photonics, 2019, Vol.3 (2), p.164-171

2019

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Photoluminescence and electroluminescence properties of GaN-based LED chips with defective regions at low excitation levels

2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2017, p.1-2

2017

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Investigations on correlation between photoluminescence images of an LED epi-wafer and characteristics of LED chips

2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015, Vol.2, p.1-2

2015

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Modified Diode Equations for Light-Emitting Diodes Considering Radiative and Nonradiative Currents

2019 34th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC), 2019, p.1-2

2019

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Properties of Defective Regions Observed by Photoluminescence Imaging for GaN-Based Light-Emitting Diode Epi-Wafers

Journal of the Optical Society of Korea, 2015-12, Vol.19 (6), p.687-694

2015

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Properties of Defective Regions Observed by Photoluminescence Imaging for GaN-Based Light-Emitting Diode Epi-Wafers

Journal of the Optical Society of Korea, 2015, Vol.19 (6), p.687-694

2015

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Photoinduced admittance spectroscopy to detect the shallow electron traps in nitrogen-doped highly compensated ZnSe

Journal of applied physics, 1997-03, Vol.81 (5), p.2425-2428

1997

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Uncertainty quantification of channelized reservoir using Ensemble Smoother with selective measurement data

Energy exploration & exploitation, 2014-10, Vol.32 (5), p.805-816

2014

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Regioselective hydroxylation of daidzein using P450 (CYP105D7) from Streptomyces avermitilis MA4680

Biotechnology and bioengineering, 2010-03, Vol.105 (4), p.697-704

2010

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Effects of stress on the evolution of Σ-shaped dislocation arrays in a 4H-SiC epitaxial layer

Observation of broad triangular Frank-type stacking faults and characterization of stacking faults with emission wavelengths below 430 nm in 4H–SiC epitaxial layers

Measuring the Internal Quantum Efficiency of Light-Emitting Diodes at an Arbitrary Temperature

Review—Active Efficiency as a Key Parameter for Understanding the Efficiency Droop in InGaN-Based Light-Emitting Diodes

Probeless Estimation of Electroluminescence Intensities Based on Photoluminescence Measurements of GaN-Based Light-Emitting Diodes

Electrical Leakage Levels Estimated from Luminescence and Photovoltaic Properties under Photoexcitation for GaN-based Light-emitting Diodes

Effects of Carrier Leakage on Photoluminescence Properties of GaN-based Light-emitting Diodes at Room Temperature

Revisiting stacking fault identification based on the characteristic photoluminescence emission wavelengths of silicon carbide epitaxial wafers

Probeless Estimation of Electroluminescence Intensities Based on Photoluminescence Measurements of GaN-Based Light-Emitting Diodes

Electrical Leakage Levels Estimated from Luminescence and Photovoltaic Properties under Photoexcitation for GaN-based Light-emitting Diodes

Effects of Carrier Leakage on Photoluminescence Properties of GaN-based Light-emitting Diodes at Room Temperature

Photoluminescence and electroluminescence properties of GaN-based LED chips with defective regions at low excitation levels

Investigations on correlation between photoluminescence images of an LED epi-wafer and characteristics of LED chips

Modified Diode Equations for Light-Emitting Diodes Considering Radiative and Nonradiative Currents

Properties of Defective Regions Observed by Photoluminescence Imaging for GaN-Based Light-Emitting Diode Epi-Wafers

Properties of Defective Regions Observed by Photoluminescence Imaging for GaN-Based Light-Emitting Diode Epi-Wafers

Photoinduced admittance spectroscopy to detect the shallow electron traps in nitrogen-doped highly compensated ZnSe

Uncertainty quantification of channelized reservoir using Ensemble Smoother with selective measurement data

Regioselective hydroxylation of daidzein using P450 (CYP105D7) from Streptomyces avermitilis MA4680

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