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Perspective: The future of quantum dot photonic integrated circuits

APL photonics, 2018-03, Vol.3 (3), p.030901-030901-20

2018

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High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si

Applied physics letters, 2017-09, Vol.111 (12)

2017

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Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Journal of applied physics, 2017-12, Vol.122 (22)

2017

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Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon

Applied physics letters, 2020-09, Vol.117 (12)

2020

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Monolithic 9 GHz passively mode locked quantum dot lasers directly grown on on-axis (001) Si

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Room-temperature mid-infrared quantum well lasers on multi-functional metamorphic buffers

Applied physics letters, 2016-11, Vol.109 (21)

2016

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Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon

Journal of applied physics, 2020-07, Vol.128 (2)

2020

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O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si

Optics express, 2017-10, Vol.25 (22), p.26853-26860

2017

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Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers

Journal of applied physics, 2015-11, Vol.118 (18)

2015

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Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

Journal of applied physics, 2018-05, Vol.123 (20)

2018

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InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)

Electronics letters, 2014-08, Vol.50 (17), p.1226-1227

2014

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Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers

IEEE journal of quantum electronics, 2019-06, Vol.55 (3), p.1-7

2019

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GaAs/Si Tandem Solar Cells with an Optically Transparent InAlAs/GaAs Strained Layer Superlattices Dislocation Filter Layer

Energies (Basel), 2023-01, Vol.16 (3), p.1158

2023

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Thermal degradation comparison of delta-doped GaAs tunnel junctions using Si and Te n-type dopants

AIP advances, 2023-04, Vol.13 (4), p.045124-045124-6

2023

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Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

Applied physics letters, 2014-12, Vol.105 (25)

2014

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Highly tensile-strained Ge/InAlAs nanocomposites

Nature communications, 2017-01, Vol.8 (1), p.14204-7, Article 14204

2017

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Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap

Applied physics letters, 2014-08, Vol.105 (7)

2014

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Flexible GaAs Photodetectors with Ultrathin Thermally Grown Silicon Dioxide as a Long‐Lived Barrier for Chronic Biomedical Implants

Advanced photonics research, 2021-02, Vol.2 (2), p.n/a

2021

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Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si

Applied physics letters, 2018-04, Vol.112 (15)

2018

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40 Gbit/s waveguide photodiode using III–V on silicon heteroepitaxy

Optics letters, 2020-06, Vol.45 (11), p.2954-2956

2020

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Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus

Nano letters, 2019-03, Vol.19 (3), p.1488-1493

2019

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Thermal stability of GaAs solar cells for high temperature applications

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, p.2385-2388

2016

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1.3- \mu m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon

IEEE photonics technology letters, 2019-03, Vol.31 (5), p.345-348

2019

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Analysis of the optical feedback dynamics in InAs/GaAs quantum dot lasers directly grown on silicon

Journal of the Optical Society of America. B, Optical physics, 2018-11, Vol.35 (11), p.2780

2018

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High-channel-count 20 GHz passively mode-locked quantum dot laser directly grown on Si with 41 Tbit/s transmission capacity

Optica, 2019-02, Vol.6 (2), p.128

2019

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Perspective: The future of quantum dot photonic integrated circuits

High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon

Monolithic 9 GHz passively mode locked quantum dot lasers directly grown on on-axis (001) Si

Room-temperature mid-infrared quantum well lasers on multi-functional metamorphic buffers

Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon

O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si

Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers

Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)

Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers

GaAs/Si Tandem Solar Cells with an Optically Transparent InAlAs/GaAs Strained Layer Superlattices Dislocation Filter Layer

Thermal degradation comparison of delta-doped GaAs tunnel junctions using Si and Te n-type dopants

Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

Highly tensile-strained Ge/InAlAs nanocomposites

Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap

Flexible GaAs Photodetectors with Ultrathin Thermally Grown Silicon Dioxide as a Long‐Lived Barrier for Chronic Biomedical Implants

Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si

40 Gbit/s waveguide photodiode using III–V on silicon heteroepitaxy

Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus

Thermal stability of GaAs solar cells for high temperature applications

1.3- \mu m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon

Analysis of the optical feedback dynamics in InAs/GaAs quantum dot lasers directly grown on silicon

High-channel-count 20 GHz passively mode-locked quantum dot laser directly grown on Si with 41 Tbit/s transmission capacity

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