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Verification and mitigation of ion migration in perovskite solar cells

APL materials, 2019-04, Vol.7 (4), p.041111-041111-12

2019

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Layered (C6H5CH2NH3)2CuBr4 Perovskite for Multilevel Storage Resistive Switching Memory

Advanced functional materials, 2020-07, Vol.30 (27), p.n/a

2020

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Perovskite-related (CH3NH3)3Sb2Br9 for forming-free memristor and low-energy-consuming neuromorphic computing

Nanoscale, 2019, Vol.11 (13), p.6453-6461

2019

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Potassium ions as a kinetic controller in ionic double layers for hysteresis-free perovskite solar cells

Journal of materials chemistry. A, Materials for energy and sustainability, 2019, Vol.7 (32), p.1887-18815

2019

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Effect of interlayer spacing in layered perovskites on resistive switching memory

Nanoscale, 2019-08, Vol.11 (3), p.1433-14338

2019

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In-Situ Formed Type I Nanocrystalline Perovskite Film for Highly Efficient Light-Emitting Diode

ACS nano, 2017-03, Vol.11 (3), p.3311-3319

2017

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Intact Metal/Metal Halide van der Waals Junction Enables Reliable Memristive Switching with High Endurance

Advanced functional materials, 2023-04, Vol.33 (14), p.n/a

2023

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The effect of compositional engineering of imidazolium lead iodide on the resistive switching properties

Nanoscale, 2019-08, Vol.11 (3), p.14455-14464

2019

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Mixed‐Dimensional Formamidinium Bismuth Iodides Featuring In‐Situ Formed Type‐I Band Structure for Convolution Neural Networks

Advanced science, 2022-05, Vol.9 (14), p.e2200168-n/a

2022

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Asymmetric carrier transport in flexible interface-type memristor enables artificial synapses with sub-femtojoule energy consumption

Nanoscale horizons, 2021-11, Vol.6 (12), p.987-997

2021

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Roadmap on halide perovskite and related devices

Nanotechnology, 2020-04, Vol.31 (15), p.152001-152001

2020

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Vertically aligned two-dimensional halide perovskites for reliably operable artificial synapses

Materials today (Kidlington, England), 2022-01, Vol.52, p.19-30

2022

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Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite

Nanoscale, 2017-10, Vol.9 (40), p.15278-15285

2017

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All-Inorganic Bismuth Halide Perovskite-Like Materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive Memory

ACS applied materials & interfaces, 2018-09, Vol.10 (35), p.29741-29749

2018

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A layered (n-C4H9NH3)2CsAgBiBr7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio

Nanoscale, 2021-08, Vol.13 (29), p.12475-12483

2021

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1D Hexagonal HC(NH2)2PbI3 for Multilevel Resistive Switching Nonvolatile Memory

Advanced electronic materials, 2018-09, Vol.4 (9), p.n/a

2018

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Correction: Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite

Nanoscale, 2017-11, Vol.9 (43), p.17144-17144

2017

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A layered (-CHNH)CsAgBiBr perovskite for bipolar resistive switching memory with a high ON/OFF ratio

Nanoscale, 2021-07, Vol.13 (29), p.12475-12483

2021

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A layered ( n -C 4 H 9 NH 3 ) 2 CsAgBiBr 7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio

Nanoscale, 2021-07, Vol.13 (29), p.12475-12483

2021

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Layered (C 6 H 5 CH 2 NH 3 ) 2 CuBr 4 Perovskite for Multilevel Storage Resistive Switching Memory

Advanced functional materials, 2020-07, Vol.30 (27)

2020

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All-Inorganic Bismuth Halide Perovskite-Like Materials A 3 Bi 2 I 9 and A 3 Bi 1.8 Na 0.2 I 8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive Memory

ACS applied materials & interfaces, 2018-09, Vol.10 (35), p.29741-29749

2018

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Perovskite-related (CH 3 NH 3 ) 3 Sb 2 Br 9 for forming-free memristor and low-energy-consuming neuromorphic computing

Nanoscale, 2019-03, Vol.11 (13), p.6453-6461

2019

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Perovskite-related (CH3NH3)3Sb2Br9 for forming-free memristor and low-energy-consuming neuromorphic computingElectronic supplementary information (ESI) available. See DOI: 10.1039/c8nr09918a

2019-03

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Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskiteElectronic supplementary information (ESI) available. See DOI: 10.1039/c7nr05582j

2017-10

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1D Hexagonal HC(NH 2 ) 2 PbI 3 for Multilevel Resistive Switching Nonvolatile Memory

Advanced electronic materials, 2018-09, Vol.4 (9)

2018

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Verification and mitigation of ion migration in perovskite solar cells

Layered (C6H5CH2NH3)2CuBr4 Perovskite for Multilevel Storage Resistive Switching Memory

Perovskite-related (CH3NH3)3Sb2Br9 for forming-free memristor and low-energy-consuming neuromorphic computing

Potassium ions as a kinetic controller in ionic double layers for hysteresis-free perovskite solar cells

Effect of interlayer spacing in layered perovskites on resistive switching memory

In-Situ Formed Type I Nanocrystalline Perovskite Film for Highly Efficient Light-Emitting Diode

Intact Metal/Metal Halide van der Waals Junction Enables Reliable Memristive Switching with High Endurance

The effect of compositional engineering of imidazolium lead iodide on the resistive switching properties

Mixed‐Dimensional Formamidinium Bismuth Iodides Featuring In‐Situ Formed Type‐I Band Structure for Convolution Neural Networks

Asymmetric carrier transport in flexible interface-type memristor enables artificial synapses with sub-femtojoule energy consumption

Roadmap on halide perovskite and related devices

Vertically aligned two-dimensional halide perovskites for reliably operable artificial synapses

Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite

All-Inorganic Bismuth Halide Perovskite-Like Materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive Memory

A layered (n-C4H9NH3)2CsAgBiBr7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio

1D Hexagonal HC(NH2)2PbI3 for Multilevel Resistive Switching Nonvolatile Memory

Correction: Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite

A layered (-CHNH)CsAgBiBr perovskite for bipolar resistive switching memory with a high ON/OFF ratio

A layered ( n -C 4 H 9 NH 3 ) 2 CsAgBiBr 7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio

Layered (C 6 H 5 CH 2 NH 3 ) 2 CuBr 4 Perovskite for Multilevel Storage Resistive Switching Memory

All-Inorganic Bismuth Halide Perovskite-Like Materials A 3 Bi 2 I 9 and A 3 Bi 1.8 Na 0.2 I 8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive Memory

Perovskite-related (CH 3 NH 3 ) 3 Sb 2 Br 9 for forming-free memristor and low-energy-consuming neuromorphic computing

Perovskite-related (CH3NH3)3Sb2Br9 for forming-free memristor and low-energy-consuming neuromorphic computingElectronic supplementary information (ESI) available. See DOI: 10.1039/c8nr09918a

Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskiteElectronic supplementary information (ESI) available. See DOI: 10.1039/c7nr05582j

1D Hexagonal HC(NH 2 ) 2 PbI 3 for Multilevel Resistive Switching Nonvolatile Memory

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