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Effects of thermal annealing on analog resistive switching behavior in bilayer HfO2/ZnO synaptic devices: the role of ZnO grain boundaries

Nanoscale, 2024-02, Vol.16 (9), p.4609-4619

2024

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Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory

Micromachines (Basel), 2021-11, Vol.12 (11), p.1401

2021

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High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications

Micromachines (Basel), 2021-10, Vol.12 (11), p.1316

2021

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Downscaling Study of Uncooled a-Si Infrared Microbolometer Cell based on Simulation

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2020, 20(1), 91, pp.47-54

2020

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Mobility Improvement of Amorphous Indium-gallium-zinc Oxide Thin Film Transistor by Roll-to-roll Compatible Plasma Treatment

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2020, 20(2), 92, pp.163-169

2020

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Charge Migration Analysis of 3D SONOS NAND Flash Memory Using Test Pattern

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2020, 20(2), 92, pp.151-157

2020

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Effect of various seed metals on uniformity of Ag layer formed by atmospheric plasma reduction on polyethylene terephthalate substrate: An application to electromagnetic interference shielding effectiveness

Thin solid films, 2019-04, Vol.676, p.75-86

2019

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Bottom-Gated ZnO TFT Pressure Sensor with 1D Nanorods

Sensors (Basel, Switzerland), 2022-11, Vol.22 (22), p.8907

2022

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Investigation of atomic-layer-deposited Al-doped ZnO film for AZO/ZnO double-stacked active layer thin-film transistor application

Thin solid films, 2017-09, Vol.638, p.89-95

2017

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CO2 Absorption and Desorption in an Aqueous Solution of Heavily Hindered Alkanolamine: Structural Elucidation of CO2‑Containing Species

Environmental science & technology, 2014-04, Vol.48 (7), p.4163-4170

2014

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Extraction of Effective Charge Diffusivity in the Charge Trapping Layer of SONOS Flash Memory

Transactions on Electrical and Electronic Materials, 2021, 22(4), , pp.432-438

2021

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Modeling and Verification of Interface and Bulk Trap Level Density Extraction in SONOS Memory Charge Trapping Layer

Transactions on electrical and electronic materials, 2021-06, Vol.22 (3), p.372-377

2021

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Selective UV-O3 treatment for indium zinc oxide thin film transistors with solution-based multiple active layer

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S3)

2018

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Reliability Analysis by Charge Migration of 3D SONOS Flash Memory

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-5

2020

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Investigation of Low-Temperature Processed Amorphous ZnO TFTs Using a Sol-Gel Method

Transactions on electrical and electronic materials, 2017-06, Vol.18 (3), p.155-158

2017

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Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

Transactions on Electrical and Electronic Materials, 2015, 16(4), , pp.183-186

2015

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Effects of thermal annealing on analog resistive switching behavior in bilayer HfO/ZnO synaptic devices: the role of ZnO grain boundaries

Nanoscale, 2024-02, Vol.16 (9), p.469-4619

2024

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Effects of thermal annealing on analog resistive switching behavior in bilayer HfO 2 /ZnO synaptic devices: the role of ZnO grain boundaries

Nanoscale, 2024-02, Vol.16 (9), p.4609-4619

2024

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Fabrication and characteristic analysis of gas sensor using nano-structure

2018 International Conference on Electronics, Information, and Communication (ICEIC), 2018, p.1-4

2018

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Improvement in NO 2 Gas Sensing Performance Using Igzo Film Sensor

ECS transactions, 2020-04, Vol.97 (6), p.71-78

2020

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Regular Paper : Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

Transactions on electrical and electronic materials, 2015-08, Vol.16 (4), p.183

2015

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Process effect analysis on nitride trap distribution in silicon-oxide-nitride-oxide-silicon flash memory based on charge retention model

Materials express, 2021-09, Vol.11 (9), p.1615-1618

2021

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Selective UV–O 3 treatment for indium zinc oxide thin film transistors with solution-based multiple active layer

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S3), p.6

2018

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Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

Transactions on electrical and electronic materials, 2015, Vol.16 (4), p.183-186

2015

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Selective UV–O^sub 3^ treatment for indium zinc oxide thin film transistors with solution-based multiple active layer

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6), p.06KB01

2018

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Effects of thermal annealing on analog resistive switching behavior in bilayer HfO2/ZnO synaptic devices: the role of ZnO grain boundaries

Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory

High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications

Downscaling Study of Uncooled a-Si Infrared Microbolometer Cell based on Simulation

Mobility Improvement of Amorphous Indium-gallium-zinc Oxide Thin Film Transistor by Roll-to-roll Compatible Plasma Treatment

Charge Migration Analysis of 3D SONOS NAND Flash Memory Using Test Pattern

Effect of various seed metals on uniformity of Ag layer formed by atmospheric plasma reduction on polyethylene terephthalate substrate: An application to electromagnetic interference shielding effectiveness

Bottom-Gated ZnO TFT Pressure Sensor with 1D Nanorods

Investigation of atomic-layer-deposited Al-doped ZnO film for AZO/ZnO double-stacked active layer thin-film transistor application

CO2 Absorption and Desorption in an Aqueous Solution of Heavily Hindered Alkanolamine: Structural Elucidation of CO2‑Containing Species

Extraction of Effective Charge Diffusivity in the Charge Trapping Layer of SONOS Flash Memory

Modeling and Verification of Interface and Bulk Trap Level Density Extraction in SONOS Memory Charge Trapping Layer

Selective UV-O3 treatment for indium zinc oxide thin film transistors with solution-based multiple active layer

Reliability Analysis by Charge Migration of 3D SONOS Flash Memory

Investigation of Low-Temperature Processed Amorphous ZnO TFTs Using a Sol-Gel Method

Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

Effects of thermal annealing on analog resistive switching behavior in bilayer HfO/ZnO synaptic devices: the role of ZnO grain boundaries

Effects of thermal annealing on analog resistive switching behavior in bilayer HfO 2 /ZnO synaptic devices: the role of ZnO grain boundaries

Fabrication and characteristic analysis of gas sensor using nano-structure

Improvement in NO 2 Gas Sensing Performance Using Igzo Film Sensor

Regular Paper : Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

Process effect analysis on nitride trap distribution in silicon-oxide-nitride-oxide-silicon flash memory based on charge retention model

Selective UV–O 3 treatment for indium zinc oxide thin film transistors with solution-based multiple active layer

Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

Selective UV–O^sub 3^ treatment for indium zinc oxide thin film transistors with solution-based multiple active layer

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