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Epitaxial Lift-Off Technology for Large Size III-V-on-Insulator Substrate

IEEE electron device letters, 2019-11, Vol.40 (11), p.1732-1735

2019

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Single-material zinc sulfide bi-layer antireflection coatings for GaAs solar cells

Optics express, 2013-09, Vol.21 Suppl 5 (S5), p.A821-A828

2013

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Highly Sensitive and Reusable Membraneless Field-Effect Transistor (FET)-Type Tungsten Diselenide (WSe2) Biosensors

ACS applied materials & interfaces, 2018-05, Vol.10 (21), p.17639-17645

2018

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Nanostructured GaAs solar cells via metal-assisted chemical etching of emitter layers

Optics express, 2017-10, Vol.25 (20), p.23862-23872

2017

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Improved Efficiency-Bandwidth Product of Modified Uni-Traveling Carrier Photodiode Structures Using an Undoped Photo-Absorption Layer

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.3475

2006

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Thermally induced metastability of InGaAs single-layer for highly strained superlattices by metal-organic chemical vapor deposition

Journal of alloys and compounds, 2022-06, Vol.905, p.164252, Article 164252

2022

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Incidence and predictors of silent embolic cerebral infarction following diagnostic coronary angiography

International journal of cardiology, 2011-04, Vol.148 (2), p.179-182

2011

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Single-step metal-organic vapor-phase diffusion for low-dark-current planar-type avalanche photodiodes

Journal of the Korean Physical Society, 2016, 69(8), , pp.1341-1346

2016

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Drug-Eluting Stent Thrombosis During Perioperative Period

International Heart Journal, 2008, Vol.49(2), pp.135-142

2008

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Prognostic Implications of the NT-ProBNP Level and Left Atrial Size in Non-Ischemic Dilated Cardiomyopathy

Circulation Journal, 2008, Vol.72(10), pp.1658-1665

2008

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Influences of surface treatment on In0.53Ga0.47As epitaxial layer grown on silicon substrate using trimethylaluminum

Thin solid films, 2018-01, Vol.646, p.173-179

2018

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Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition

Current Applied Physics, 2018, 18(8), , pp.919-923

2018

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Te Doping Effect of InGaP in Tunnel Junction on the Performance of InGaP/InGaAs/Ge Triple-Junction Solar Cells

IEEE transactions on electron devices, 2016-04, Vol.63 (4), p.1594-1599

2016

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IEEE_Xplore

Electrochemically synthesized broadband antireflective and hydrophobic GaOOH nanopillars for III-V InGaP/GaAs/Ge triple-junction solar cell applications

Optics express, 2014-03, Vol.22 Suppl 2 (S2), p.A328-A334

2014

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Reduction of Contact Resistance Between Ni-InGaAs Alloy and In 0.53 Ga 0.47 As Using Te Interlayer

Transactions on electrical and electronic materials, 2017-10, Vol.18 (5), p.253-256

2017

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Reduction of Contact Resistance Between Ni-InGaAs Alloy and In0.53Ga0.47As Using Te Interlayer

Transactions on Electrical and Electronic Materials, 2017, 18(5), , pp.253-256

2017

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Comparative investigation of InGaP/InGaAs/Ge triple-junction solar cells using different Te-doped InGaP layers in tunnel junctions

Journal of the Korean Physical Society, 2016, 68(6), , pp.792-796

2016

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Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells

Semiconductor science and technology, 2011-07, Vol.26 (7), p.075009

2011

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Effect of Temperature on Bandwidth and Responsivity of Uni-Traveling-Carrier and Modified Uni-Traveling-Carrier Photodiodes

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.2360

2007

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A high-power MMIC VCO utilizing metamorphic HEMT technology

Microwave and optical technology letters, 2007-09, Vol.49 (9), p.2221-2224

2007

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Spontaneous Closure of Ventricular Septal Defect Complicated with Acute Myocardial Infarction

Echocardiography (Mount Kisco, N.Y.), 2008-08, Vol.25 (7), p.781-783

2008

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The Effects of Growth Temperature and Substrate Tilt Angle on GaInP/GaAs Tandem Solar Cells

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2009, 9(2), , pp.91-97

2009

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Enhanced efficiency in GaInP/GaAs tandem solar cells using carbon doped GaAs in tunnel junction

Microelectronic engineering, 2010-04, Vol.87 (4), p.677-681

2010

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Pulmonary emboli originating from infective endocarditis of the mitral valve migrating through an atrial septal defect

International journal of cardiology, 2009-03, Vol.133 (1), p.e3-e5

2009

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Comparative Investigation of InGaP/InGaAs/Ge Triple-junction Solar Cells Using Different Te-Doped InGaP Layers in Tunnel Junctions

Journal of the Korean Physical Society, 2016-03, p.792-796

2016

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Epitaxial Lift-Off Technology for Large Size III-V-on-Insulator Substrate

Single-material zinc sulfide bi-layer antireflection coatings for GaAs solar cells

Highly Sensitive and Reusable Membraneless Field-Effect Transistor (FET)-Type Tungsten Diselenide (WSe2) Biosensors

Nanostructured GaAs solar cells via metal-assisted chemical etching of emitter layers

Improved Efficiency-Bandwidth Product of Modified Uni-Traveling Carrier Photodiode Structures Using an Undoped Photo-Absorption Layer

Thermally induced metastability of InGaAs single-layer for highly strained superlattices by metal-organic chemical vapor deposition

Incidence and predictors of silent embolic cerebral infarction following diagnostic coronary angiography

Single-step metal-organic vapor-phase diffusion for low-dark-current planar-type avalanche photodiodes

Drug-Eluting Stent Thrombosis During Perioperative Period

Prognostic Implications of the NT-ProBNP Level and Left Atrial Size in Non-Ischemic Dilated Cardiomyopathy

Influences of surface treatment on In0.53Ga0.47As epitaxial layer grown on silicon substrate using trimethylaluminum

Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition

Te Doping Effect of InGaP in Tunnel Junction on the Performance of InGaP/InGaAs/Ge Triple-Junction Solar Cells

Electrochemically synthesized broadband antireflective and hydrophobic GaOOH nanopillars for III-V InGaP/GaAs/Ge triple-junction solar cell applications

Reduction of Contact Resistance Between Ni-InGaAs Alloy and In 0.53 Ga 0.47 As Using Te Interlayer

Reduction of Contact Resistance Between Ni-InGaAs Alloy and In0.53Ga0.47As Using Te Interlayer

Comparative investigation of InGaP/InGaAs/Ge triple-junction solar cells using different Te-doped InGaP layers in tunnel junctions

Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells

Effect of Temperature on Bandwidth and Responsivity of Uni-Traveling-Carrier and Modified Uni-Traveling-Carrier Photodiodes

A high-power MMIC VCO utilizing metamorphic HEMT technology

Spontaneous Closure of Ventricular Septal Defect Complicated with Acute Myocardial Infarction

The Effects of Growth Temperature and Substrate Tilt Angle on GaInP/GaAs Tandem Solar Cells

Enhanced efficiency in GaInP/GaAs tandem solar cells using carbon doped GaAs in tunnel junction

Pulmonary emboli originating from infective endocarditis of the mitral valve migrating through an atrial septal defect

Comparative Investigation of InGaP/InGaAs/Ge Triple-junction Solar Cells Using Different Te-Doped InGaP Layers in Tunnel Junctions

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