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Selective thermal terahertz emission from GaAs and AlGaAs

Applied physics letters, 2014-09, Vol.105 (9)

2014

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Thermally stimulated terahertz radiation of plasmon–phonon polaritons in GaAs

Applied physics. A, Materials science & processing, 2014-04, Vol.115 (1), p.199-202

2014

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X-ray luminescence spectra of graded-gap AlxGa1−xAs structures irradiated by alpha particle

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2011-12, Vol.660 (1), p.69-72

2011

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Scattering of electrons by confined interface polar optical phonons in a double-barrier heterostructure

Semiconductors (Woodbury, N.Y.), 2007-09, Vol.41 (9), p.1074-1079

2007

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Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/AlxIn1 − xAs and In0.2Ga0.8As/AlxGa1 − xAs heterostructures in high electric fields

Semiconductors (Woodbury, N.Y.), 2011-06, Vol.45 (6), p.761-765

2011

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Interaction of terahertz radiation with surface and interface plasmon–phonons in AlGaAs/GaAs and GaN/Al2O3 heterostructures

Applied physics. A, Materials science & processing, 2013, Vol.110 (1), p.153-156

2013

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Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier

Applied physics. A, Materials science & processing, 2012-10, Vol.109 (1), p.233-237

2012

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Interaction of electrons with optical phonons localized in a quantum well

Semiconductors (Woodbury, N.Y.), 2009-12, Vol.43 (12), p.1590-1596

2009

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Drift velocity of electrons in quantum wells in high electric fields

Semiconductors (Woodbury, N.Y.), 2009-04, Vol.43 (4), p.458-462

2009

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An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well

Semiconductors (Woodbury, N.Y.), 2007-12, Vol.41 (12), p.1439-1444

2007

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Hot electron transport in heterostructures

Semiconductor science and technology, 2011-01, Vol.26 (1), p.014025

2011

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Electron transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well with a δ-Si doped barrier in high electric fields

Semiconductors (Woodbury, N.Y.), 2010-07, Vol.44 (7), p.898-903

2010

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Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures

Acta physica Polonica, A, 2008-03, Vol.113 (3), p.989-992

2008

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Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields

Acta physica Polonica, A, 2011-02, Vol.119 (2), p.170-172

2011

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Thermally stimulated 3–15 THz emission at plasmon-phonon frequencies in polar semiconductors

Semiconductors (Woodbury, N.Y.), 2014-12, Vol.48 (12), p.1557-1561

2014

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Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts

Semiconductors (Woodbury, N.Y.), 2013-03, Vol.47 (3), p.372-375

2013

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Electron mobility and subband population tuning by a phonon wall inserted in a semiconductor quantum well

Journal of applied physics, 1997-02, Vol.81 (4), p.1775-1780

1997

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Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

Semiconductors (Woodbury, N.Y.), 2011-09, Vol.45 (9), p.1169-1172

2011

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Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/Al x In1 − x As and In0.2Ga0.8As/Al x Ga1 − x As heterostructures in high electric fields

Semiconductors (Woodbury, N.Y.), 2011-06, Vol.45 (6), p.761-765

2011

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Decrease of channel conductivity with increasing sheet electron concentration in modulation-doped heterostructures

Journal of applied physics, 2000-07, Vol.88 (2), p.1056-1060

2000

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Transport of electrons in a GaAs quantum well in high electric fields

Semiconductors (Woodbury, N.Y.), 2009-09, Vol.43 (9), p.1177-1181

2009

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Photoluminescence and electron subband population in modulation doped AlGaAs/GaAs/AlGaAs heterostructures

Journal of applied physics, 1997-12, Vol.82 (11), p.5564-5567

1997

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Electron Mobility Engineering in 2D Structures

physica status solidi (b), 1997-11, Vol.204 (1), p.238-240

1997

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A graded-gap detector of ionizing radiation

Semiconductors (Woodbury, N.Y.), 2002-01, Vol.36 (1), p.116-120

2002

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Conductivity of modulation-doped AlGaAs/GaAs/AlGaAs quantum well with an inserted thin AlAs barrier

Nanotechnology, 2001-12, Vol.12 (4), p.566-569

2001

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Selective thermal terahertz emission from GaAs and AlGaAs

Thermally stimulated terahertz radiation of plasmon–phonon polaritons in GaAs

X-ray luminescence spectra of graded-gap AlxGa1−xAs structures irradiated by alpha particle

Scattering of electrons by confined interface polar optical phonons in a double-barrier heterostructure

Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/AlxIn1 − xAs and In0.2Ga0.8As/AlxGa1 − xAs heterostructures in high electric fields

Interaction of terahertz radiation with surface and interface plasmon–phonons in AlGaAs/GaAs and GaN/Al2O3 heterostructures

Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier

Interaction of electrons with optical phonons localized in a quantum well

Drift velocity of electrons in quantum wells in high electric fields

An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well

Hot electron transport in heterostructures

Electron transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well with a δ-Si doped barrier in high electric fields

Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures

Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields

Thermally stimulated 3–15 THz emission at plasmon-phonon frequencies in polar semiconductors

Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts

Electron mobility and subband population tuning by a phonon wall inserted in a semiconductor quantum well

Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/Al x In1 − x As and In0.2Ga0.8As/Al x Ga1 − x As heterostructures in high electric fields

Decrease of channel conductivity with increasing sheet electron concentration in modulation-doped heterostructures

Transport of electrons in a GaAs quantum well in high electric fields

Photoluminescence and electron subband population in modulation doped AlGaAs/GaAs/AlGaAs heterostructures

Electron Mobility Engineering in 2D Structures

A graded-gap detector of ionizing radiation

Conductivity of modulation-doped AlGaAs/GaAs/AlGaAs quantum well with an inserted thin AlAs barrier

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