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Resistance switching in HfO2 metal-insulator-metal devices

Journal of applied physics, 2010-04, Vol.107 (7)

2010

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Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2

Microelectronic engineering, 2011-05, Vol.88 (5), p.814-816

2011

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Few graphene layers/carbon nanotube composites grown at complementary-metal-oxide-semiconductor compatible temperature

Applied physics letters, 2011-03, Vol.98 (12), p.123103-123103-3

2011

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Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures

Nanotechnology, 2013-03, Vol.24 (8), p.085706-085706

2013

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Filament Assisted Chemical Vapor Deposited organosilicate as chemical layer for nanometric hydrocarbon gas sensors

Sensors and actuators. B, Chemical, 2018-10, Vol.271, p.271-279

2018

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Resistance switching of Cu/SiO2 memory cells studied under voltage and current-driven modes

Applied physics letters, 2010-05, Vol.96 (19)

2010

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Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

Thin solid films, 2012-05, Vol.520 (14), p.4551-4555

2012

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The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories

Physical chemistry chemical physics : PCCP, 2015-10, Vol.17 (37), p.23931-23937

2015

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Corrigendum to “Filament assisted chemical vapor deposited organosilicate as chemical layer for nanometric hydrocarbon gas sensors” [Sens. Actuators: B Chem. 271 (2018) 271–279]

Sensors and actuators. B, Chemical, 2019-01, Vol.279, p.509-509

2019

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Formation and Characterization of Filamentary Current Paths in HfO2-Based Resistive Switching Structures

IEEE electron device letters, 2012-07, Vol.33 (7), p.1057-1059

2012

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Stress-induced leakage current and trap generation in HfO2 thin films

Journal of applied physics, 2012-01, Vol.112 (7)

2012

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Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory

Thin solid films, 2013-04, Vol.533, p.19-23

2013

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Four-dimensional spectral low-loss energy-filtered transmission electron tomography of silicon nanowire-based capacitors

Applied physics letters, 2012-08, Vol.101 (6), p.63108

2012

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a-SiC:H low- k deposition as copper diffusion barrier layer in advanced microelectronic interconnections

Surface & coatings technology, 2007-09, Vol.201 (22), p.9260-9263

2007

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Ultra high density three dimensional capacitors based on Si nanowires array grown on a metal layer

Applied physics letters, 2012-08, Vol.101 (8), p.83110

2012

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Accurate analysis of parasitic current overshoot during forming operation in RRAMs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1129-1132

2011

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Role of Sb dopant in Ag:GeSx-based conducting bridge random access memories

Physica status solidi. A, Applications and materials science, 2016-02, Vol.213 (2), p.311-315

2016

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Preparation and characterization – including in situ Small Angle X-Ray Scattering – of gas chromatographic capillary columns with mesoporous silica thin films as stationary phases

Journal of Chromatography A, 2015-09, Vol.1413, p.85-93

2015

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Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications

Thin solid films, 2012-12, Vol.525, p.20-27

2012

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Porous ultra low k deposited by PECVD: From deposition to material properties

Surface & coatings technology, 2007-09, Vol.201 (22), p.9248-9251

2007

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On the impact of Ag doping on performance and reliability of GeS2-based conductive bridge memories

Solid-state electronics, 2013-06, Vol.84, p.155-159

2013

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Comparison Between E-beam and Ultraviolet Curing to Perform Porous a-SiOC:H

Journal of the Electrochemical Society, 2007, Vol.154 (5), p.G103

2007

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Thermal furnace and Ultraviolet assisted curing impact on SiOCH spin-on ultra low dielectric constant materials

Thin solid films, 2008-01, Vol.516 (6), p.1097-1103

2008

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Chemical state of Ag in Conducting Bridge Random Access Memory cells: a depth resolved X-ray Absorption Spectroscopy investigation

Journal of physics. Conference series, 2016, Vol.712 (1), p.12046

2016

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ToF-SIMS spectra multivariate analyses for the chemical characterization of microelectronic low-k materials

Surface and interface analysis, 2014-11, Vol.46 (S1), p.213-216

2014

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Resistance switching in HfO2 metal-insulator-metal devices

Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2

Few graphene layers/carbon nanotube composites grown at complementary-metal-oxide-semiconductor compatible temperature

Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures

Filament Assisted Chemical Vapor Deposited organosilicate as chemical layer for nanometric hydrocarbon gas sensors

Resistance switching of Cu/SiO2 memory cells studied under voltage and current-driven modes

Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories

Corrigendum to “Filament assisted chemical vapor deposited organosilicate as chemical layer for nanometric hydrocarbon gas sensors” [Sens. Actuators: B Chem. 271 (2018) 271–279]

Formation and Characterization of Filamentary Current Paths in HfO2-Based Resistive Switching Structures

Stress-induced leakage current and trap generation in HfO2 thin films

Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory

Four-dimensional spectral low-loss energy-filtered transmission electron tomography of silicon nanowire-based capacitors

a-SiC:H low- k deposition as copper diffusion barrier layer in advanced microelectronic interconnections

Ultra high density three dimensional capacitors based on Si nanowires array grown on a metal layer

Accurate analysis of parasitic current overshoot during forming operation in RRAMs

Role of Sb dopant in Ag:GeSx-based conducting bridge random access memories

Preparation and characterization – including in situ Small Angle X-Ray Scattering – of gas chromatographic capillary columns with mesoporous silica thin films as stationary phases

Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications

Porous ultra low k deposited by PECVD: From deposition to material properties

On the impact of Ag doping on performance and reliability of GeS2-based conductive bridge memories

Comparison Between E-beam and Ultraviolet Curing to Perform Porous a-SiOC:H

Thermal furnace and Ultraviolet assisted curing impact on SiOCH spin-on ultra low dielectric constant materials

Chemical state of Ag in Conducting Bridge Random Access Memory cells: a depth resolved X-ray Absorption Spectroscopy investigation

ToF-SIMS spectra multivariate analyses for the chemical characterization of microelectronic low-k materials

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