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An over-110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission system

IEEE journal of solid-state circuits, 2003-09, Vol.38 (9), p.1479-1484

2003

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Q-Band InAlGaN/GaN LNA using current reuse topology

2016 IEEE MTT-S International Microwave Symposium (IMS), 2016, p.1-4

2016

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High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2016, p.1-4

2016

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An over 200-W output power GaN HEMT push-pull amplifier with high reliability

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535), 2004, Vol.3, p.1347-1350 Vol.3

2004

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High power and high gain AlGaN/GaN MIS-HEMTs with high-k dielectric layer

Physica status solidi. C, 2008-05, Vol.5 (6), p.2037-2040

2008

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Degradation-Mode Analysis for Highly Reliable GaN-HEMT

2007 IEEE/MTT-S International Microwave Symposium, 2007, p.639-642

2007

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Pseudomorphic n-InGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiers

IEEE electron device letters, 1993-08, Vol.14 (8), p.406-408

1993

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Special Section on Microwave and Millimeter-wave Technologies

IEICE transactions on electronics, 2008-11, Vol.E91-C (11), p.1719-1719

Joshin, K.

2008

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A 77GHz transceiver in 90nm CMOS

2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2009, p.310-311,311a

2009

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Highly uniform AlGaN/GaN power HEMT on a 3-inch conductive N-SiC substrate for wireless base station application

IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05, 2005, p.4 pp.

2005

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Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.9.1.1-9.1.4

2015

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A 36 W CW AlGaN/GaN-power HEMT using surface-charge-controlled structure

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.3, p.1815-1818 vol.3

2002

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A fully-integrated K-band CMOS power amplifier with Psat of 23.8 dBm and PAE of 25.1

2011 IEEE Radio Frequency Integrated Circuits Symposium, 2011, p.1-4

2011

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High-power and high-efficiency AlGaN/GaN HEMT operated at 50 V drain bias voltage

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003, 2003, p.167-170

2003

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0.2 cc HBT power amplifier module with 40% power-added efficiency for 1.95 GHz wide-band CDMA cellular phones

1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999, Vol.3, p.1099-1102 vol.3

1999

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Self-linearizing technique for L-band HBT power amplifier: effect of source impedance on phase distortion

IEEE transactions on microwave theory and techniques, 1996-12, Vol.44 (12), p.2398-2402

1996

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Reliability of GaN HEMTs: current status and future technology

2009 IEEE International Reliability Physics Symposium, 2009, p.61-70

2009

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C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE

2009 IEEE MTT-S International Microwave Symposium Digest, 2009, p.1265-1268

2009

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A 100-GHz distributed amplifier in chip-size package

IEEE MTT-S International Microwave Symposium Digest, 2003, 2003, Vol.2, p.1029-1032 vol.2

2003

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Chemical beam epitaxy selectively-regrown n +-GaAs layer on metalorganic chemical vapor deposition grown GaInP/GaInAs/GaAs pseudomorphic high electron mobility transistor structure

Journal of crystal growth, 1994-03, Vol.136 (1), p.261-267

1994

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High power AlGaN/GaN HEMTs for wireless base station application

63rd Device Research Conference Digest, 2005. DRC '05, 2005, Vol.1, p.173-176

2005

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Thermal management for flip-chip high power amplifiers utilizing carbon nanotube bumps

2009 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2009, p.221-224

2009

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Experimental and theoretical noise analysis of microwave HEMTs

IEEE transactions on electron devices, 1989-10, Vol.36 (10), p.2274-2280

1989

Volltextzugriff (PDF)

A CW 7-12 GHz GaN Hybrid Power Amplifier IC with High PAE Using the Load-Impedance Change Compensation Technique

2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 2008, p.1-4

2008

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High Fmax GaN-HEMT with High Breakdown Voltage for Millimeter-Wave Applications

2007 IEEE Compound Semiconductor Integrated Circuits Symposium, 2007, p.1-4

2007

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An over-110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission system

Q-Band InAlGaN/GaN LNA using current reuse topology

High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier

An over 200-W output power GaN HEMT push-pull amplifier with high reliability

High power and high gain AlGaN/GaN MIS-HEMTs with high-k dielectric layer

Degradation-Mode Analysis for Highly Reliable GaN-HEMT

Pseudomorphic n-InGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiers

Special Section on Microwave and Millimeter-wave Technologies

A 77GHz transceiver in 90nm CMOS

Highly uniform AlGaN/GaN power HEMT on a 3-inch conductive N-SiC substrate for wireless base station application

Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz

A 36 W CW AlGaN/GaN-power HEMT using surface-charge-controlled structure

A fully-integrated K-band CMOS power amplifier with Psat of 23.8 dBm and PAE of 25.1

High-power and high-efficiency AlGaN/GaN HEMT operated at 50 V drain bias voltage

0.2 cc HBT power amplifier module with 40% power-added efficiency for 1.95 GHz wide-band CDMA cellular phones

Self-linearizing technique for L-band HBT power amplifier: effect of source impedance on phase distortion

Reliability of GaN HEMTs: current status and future technology

C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE

A 100-GHz distributed amplifier in chip-size package

Chemical beam epitaxy selectively-regrown n +-GaAs layer on metalorganic chemical vapor deposition grown GaInP/GaInAs/GaAs pseudomorphic high electron mobility transistor structure

High power AlGaN/GaN HEMTs for wireless base station application

Thermal management for flip-chip high power amplifiers utilizing carbon nanotube bumps

Experimental and theoretical noise analysis of microwave HEMTs

A CW 7-12 GHz GaN Hybrid Power Amplifier IC with High PAE Using the Load-Impedance Change Compensation Technique

High Fmax GaN-HEMT with High Breakdown Voltage for Millimeter-Wave Applications

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