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Intertwining of materials into de-arsenification of water

Bulletin of materials science, 2024-04, Vol.47 (2), p.83, Article 83

2024

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One-pot facile approach to design an efficient macro-porous polymeric matrix to remediate Hg(II)and Pb(II) from aqueous medium and its performance evaluation study by mathematical modelling

Environmental pollution (1987), 2023-04, Vol.323, p.121255-121255, Article 121255

2023

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Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors

Journal of applied physics, 2021-07, Vol.130 (1)

2021

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Construction of arsenic selective chelating resin with iron precursor for removal of low-concentration arsenic: Breakthrough modeling and field deployment

Journal of hazardous materials, 2023-10, Vol.459, p.132000-132000, Article 132000

2023

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A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs

IEEE transactions on nanotechnology, 2016-11, Vol.15 (6), p.947-955

2016

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Synchronous Removal of Arsenic and Fluoride from Aqueous Solution: A Facile Approach to Fabricate Novel Functional Metallopolymer Microspheres

ACS omega, 2022-02, Vol.7 (6), p.4879-4891

2022

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Diabetes-induced erectile dysfunction: epidemiology, pathophysiology and management

Journal of diabetes and its complications, 2011-03, Vol.25 (2), p.129-136

2011

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Polymers are paving their way into defluoridation of water

Express polymer letters, 2023-09, Vol.17 (9), p.913-931

2023

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Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering

IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2544-2550

2019

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Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.561-569

2019

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Rationally designed in-chain porous metallo-polymeric microsphere: A highly efficient and regenerative scavenger for ultra-trace arsenic from water

Chemical engineering journal (Lausanne, Switzerland : 1996), 2022-12, Vol.449, p.138420, Article 138420

2022

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Designing of a proficient macro porous metallo-polymer of iron with anion functionality: A sustainable approach for arsenic remediation from water

Desalination and water treatment, 2024-10, p.100816, Article 100816

2024

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Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.570-577

2019

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Part I: Physical Insights Into Dynamic R ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5720-5727

2021

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On the Channel Hot-Electron's Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4869-4876

2021

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Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic \textit}}}} in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2022, p.1-8

2022

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Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5720-5727

2021

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Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer

IEEE transactions on electron devices, 2024-09, p.1-8

2024

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Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic \textit} Behavior in AlGaN/GaN HEMTs-Part II

IEEE transactions on electron devices, 2023-12, p.1-0

2023

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Interplay Between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs-Part II

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.80-87

2021

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Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic RON of AlGaN/GaN HEMTs Under Semi-on State

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6934-6939

2022

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Novel Surface Passivation Scheme by Using p-Type AlTiO to Mitigate Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs-Part II

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5728-5735

2021

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Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R ON of AlGaN/GaN HEMTs Under Semi-on State

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6934-6939

2022

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Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-Si

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1633-1640

2024

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Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.6035-6042

2022

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Intertwining of materials into de-arsenification of water

One-pot facile approach to design an efficient macro-porous polymeric matrix to remediate Hg(II)and Pb(II) from aqueous medium and its performance evaluation study by mathematical modelling

Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors

Construction of arsenic selective chelating resin with iron precursor for removal of low-concentration arsenic: Breakthrough modeling and field deployment

A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs

Synchronous Removal of Arsenic and Fluoride from Aqueous Solution: A Facile Approach to Fabricate Novel Functional Metallopolymer Microspheres

Diabetes-induced erectile dysfunction: epidemiology, pathophysiology and management

Polymers are paving their way into defluoridation of water

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering

Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs

Rationally designed in-chain porous metallo-polymeric microsphere: A highly efficient and regenerative scavenger for ultra-trace arsenic from water

Designing of a proficient macro porous metallo-polymer of iron with anion functionality: A sustainable approach for arsenic remediation from water

Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs

Part I: Physical Insights Into Dynamic R ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

On the Channel Hot-Electron's Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic \textit}}}} in AlGaN/GaN HEMTs

Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer

Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic \textit} Behavior in AlGaN/GaN HEMTs-Part II

Interplay Between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs-Part II

Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic RON of AlGaN/GaN HEMTs Under Semi-on State

Novel Surface Passivation Scheme by Using p-Type AlTiO to Mitigate Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs-Part II

Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R ON of AlGaN/GaN HEMTs Under Semi-on State

Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-Si

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs

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