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0.1-[Formula Omitted] InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

IEEE transactions on electron devices, 2016-08, Vol.63 (8)

2016

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0.1- \mu \text InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

IEEE transactions on electron devices, 2016-08, Vol.63 (8), p.3076-3083

2016

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0/1 Polytopes with Quadratic Chvátal Rank

Integer Programming and Combinatorial Optimization, p.349-361

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A 0.13μm CMOS adaptive sigma–delta modulator for triple-mode GSM/Bluetooth/UMTS applications

Microelectronics, 2010-05, Vol.41 (5), p.277-290

2010

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A 0.18 μm CMOS capacitor-less Low-Drop Out Voltage Regulator Compensated via the Bootstrap Flipped-Voltage Follower

Microelectronics, 2020-07, Vol.101, p.104809, Article 104809

2020

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A 0.1pJ/b 5-to-10Gb/s charge-recycling stacked low-power I/O for on-chip signaling in 45nm CMOS SOI

2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, 2013, p.400-401

2013

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0.1T magnetic resonance image in the study of experimental hydrocephalus in rats. Accuracy of the method in the measurements of the ventricular size

Acta Cirurgica Brasileira, 2012-11, Vol.27 (11), p.768-772

2012

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0.1T magnetic resonance image in the study of experimental hydrocephalus in rats. Accuracy of the method in the measurements of the ventricular size Imagem de ressonância magnética de 1,0T no estudo da hidrocefalia experimental em ratos. Avaliação do método de medição do tamanho ventricular

Acta cirúrgica brasileira, 2012-11, Vol.27 (11), p.768-772

2012

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0.2% Chlorhexidine Mouthwash With an Antidiscoloration System Versus 0.2% Chlorhexidine Mouthwash: A Prospective Clinical Comparative Study

Journal of periodontology (1970), 2011-01, Vol.82 (1), p.80-85

2011

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0.2-[Formula Omitted] AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition [Formula Omitted] Passivation

IEEE electron device letters, 2013-06, Vol.34 (6), p.744

2013

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0.2- mu m AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al 2 O 3 Passivation

IEEE electron device letters, 2013-06, Vol.34 (6), p.744-746

2013

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0.2- \mu AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Passivation

IEEE electron device letters, 2013-06, Vol.34 (6), p.744-746

2013

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A 0.2-to-2MHz BW, 50-to-86dB SNDR, 16-to-22mW flexible 4 super(th)-order capital sigma Delta modulator with DC-to-44MHz tunable center frequency in 1.2-V 90-nm CMOS

2012 IEEE/IFIP 20th International Conference on VLSI and System-On-Chip, 2012-10, p.47-52

2012

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A 0.2-to-2MHz BW, 50-to-86dB SNDR, 16-to-22mW flexible 4th-order ΣΔ modulator with DC-to-44MHz tunable center frequency in 1.2-V 90-nm CMOS

2012 IEEE/IFIP 20th International Conference on VLSI and System-on-Chip (VLSI-SoC), 2012, p.47-52

2012

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0.2-μm AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al2O3 Passivation

IEEE electron device letters, 2013-06, Vol.34 (6), p.744-746

2013

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0.25-V Class-AB CMOS Capacitance Multiplier and Precision Rectifiers

IEEE transactions on very large scale integration (VLSI) systems, 2019-04, Vol.27 (4), p.830-842

2019

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A 0.35μm CMOS 17-bit@40kS/s sensor A/D interface based on a programmable-gain cascade 2-1 ΣΔ modulator

2004

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A 0.38 V Fully Differential K-Band LNA with Transformer-Based Matching Networks

Applied sciences, 2023-04, Vol.13 (9), p.5460

2023

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A 0.4- mu m gate-length AlGaAs/GaAs P-channel HIGFET with 127-mS/mm transconductance at 77 K

IEEE electron device letters, 1990-07, Vol.11 (7), p.282-284, Article 282

1990

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A 0-40 GHz RF Tunable Receiver Based on Photonic Direct Conversion and Digital Feed-Forward Lasers Noise Cancellation

Journal of lightwave technology, 2018-10, Vol.36 (19), p.4423-4429

2018

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0–40 GHz-Tunable RF Receivers on Chip exploiting a Noise-Cancelling Architecture and a Silicon Photonic Modulator

2019 Optical Fiber Communications Conference and Exhibition (OFC), 2019, p.1-3

2019

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A 0.5-16.3 Gb/s Fully Adaptive Flexible-Reach Transceiver for FPGA in 20 nm CMOS

IEEE journal of solid-state circuits, 2015-08, Vol.50 (8), p.1932-1944

2015

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0.5 mg/kg versus 1 mg/kg of Intravenous Omeprazole for the Prophylaxis of Gastrointestinal Bleeding in Critically Ill Children: A Randomized Study

The Journal of pediatrics, 2013-04, Vol.162 (4), p.776-782.e1

2013

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0.5 V 15 [Formula Omitted]W Recycling Folded Cascode Amplifier With 34767 MHz·pF/mA FOM

IEEE solid-state circuits letters, 2018-01, Vol.1 (7), p.170

2018

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0.5 V 15 \mu W Recycling Folded Cascode Amplifier With 34767 MHz·pF/mA FOM

IEEE solid-state circuits letters, 2018-07, Vol.1 (7), p.170-173

2018

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0.1-[Formula Omitted] InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

0.1- \mu \text InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

0/1 Polytopes with Quadratic Chvátal Rank

A 0.13μm CMOS adaptive sigma–delta modulator for triple-mode GSM/Bluetooth/UMTS applications

A 0.18 μm CMOS capacitor-less Low-Drop Out Voltage Regulator Compensated via the Bootstrap Flipped-Voltage Follower

A 0.1pJ/b 5-to-10Gb/s charge-recycling stacked low-power I/O for on-chip signaling in 45nm CMOS SOI

0.1T magnetic resonance image in the study of experimental hydrocephalus in rats. Accuracy of the method in the measurements of the ventricular size

0.1T magnetic resonance image in the study of experimental hydrocephalus in rats. Accuracy of the method in the measurements of the ventricular size Imagem de ressonância magnética de 1,0T no estudo da hidrocefalia experimental em ratos. Avaliação do método de medição do tamanho ventricular

0.2% Chlorhexidine Mouthwash With an Antidiscoloration System Versus 0.2% Chlorhexidine Mouthwash: A Prospective Clinical Comparative Study

0.2-[Formula Omitted] AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition [Formula Omitted] Passivation

0.2- mu m AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al 2 O 3 Passivation

0.2- \mu AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Passivation

A 0.2-to-2MHz BW, 50-to-86dB SNDR, 16-to-22mW flexible 4 super(th)-order capital sigma Delta modulator with DC-to-44MHz tunable center frequency in 1.2-V 90-nm CMOS

A 0.2-to-2MHz BW, 50-to-86dB SNDR, 16-to-22mW flexible 4th-order ΣΔ modulator with DC-to-44MHz tunable center frequency in 1.2-V 90-nm CMOS

0.2-μm AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al2O3 Passivation

0.25-V Class-AB CMOS Capacitance Multiplier and Precision Rectifiers

A 0.35μm CMOS 17-bit@40kS/s sensor A/D interface based on a programmable-gain cascade 2-1 ΣΔ modulator

A 0.38 V Fully Differential K-Band LNA with Transformer-Based Matching Networks

A 0.4- mu m gate-length AlGaAs/GaAs P-channel HIGFET with 127-mS/mm transconductance at 77 K

A 0-40 GHz RF Tunable Receiver Based on Photonic Direct Conversion and Digital Feed-Forward Lasers Noise Cancellation

0–40 GHz-Tunable RF Receivers on Chip exploiting a Noise-Cancelling Architecture and a Silicon Photonic Modulator

A 0.5-16.3 Gb/s Fully Adaptive Flexible-Reach Transceiver for FPGA in 20 nm CMOS

0.5 mg/kg versus 1 mg/kg of Intravenous Omeprazole for the Prophylaxis of Gastrointestinal Bleeding in Critically Ill Children: A Randomized Study

0.5 V 15 [Formula Omitted]W Recycling Folded Cascode Amplifier With 34767 MHz·pF/mA FOM

0.5 V 15 \mu W Recycling Folded Cascode Amplifier With 34767 MHz·pF/mA FOM

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