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Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2

Solid state communications, 2015-02, Vol.203, p.16-20

2015

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Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts

Nature communications, 2011-03, Vol.2 (1), p.245-245, Article 245

2011

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Anomalous temperature-dependent spin-valley polarization in monolayer WS2

Scientific reports, 2016-01, Vol.6 (1), p.18885-18885, Article 18885

2016

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Progress toward electrical injection of spin-polarized electrons into semiconductors

Proceedings of the IEEE, 2003, Vol.91 (5), p.727-740

Jonker, B.T.

2003

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Electrical injection and detection of spin accumulation in Ge at room temperature

Solid state communications, 2012-02, Vol.152 (4), p.244-248

2012

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Information Processing With Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation, and Detection

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2343-2347

2009

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Electrical Spin Injection and Transport in Semiconductor Spintronic Devices

MRS bulletin, 2003-10, Vol.28 (10), p.740-748

2003

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Spin nomenclature for semiconductors and magnetic metals

Journal of magnetism and magnetic materials, 2004-06, Vol.277 (1), p.24-28

2004

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A group-IV ferromagnetic semiconductor: MnxGe1-x

Science (American Association for the Advancement of Science), 2002-01, Vol.295 (5555), p.651-654

2002

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Solid phase epitaxial growth of 3C–SiC thin film on Si and annihilation of nanopores

Acta materialia, 2014-02, Vol.65, p.418-424

2014

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Interfacial phase formation during growth of ferromagnetic CdCr 2Se 4 on AlGaAs and ZnSe/AlGaAs

Acta materialia, 2007, Vol.55 (14), p.4625-4634

2007

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Growth of ferromagnetic nanoparticles in Ge:Fe thin films

Applied physics letters, 2005-01, Vol.86 (3), p.032509-032509-3

2005

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Spin injection across (110) interfaces: Fe∕GaAs(110) spin-light-emitting diodes

Applied physics letters, 2004-08, Vol.85 (9), p.1544-1546

2004

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Phosphorus doping of silicon at substrate temperatures above 600 °C

Thin solid films, 2010, Vol.518 (6), p.S270-S272

2010

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Interfacial phase formation during growth of ferromagnetic CdCr2Se4 on AlGaAs and ZnSe/AlGaAs

Acta materialia, 2007-08, Vol.55 (14), p.4625-4634

2007

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Formation of Cr–germanide nanoparticles during growth of epitaxial Ge–Cr thin films

Acta materialia, 2004-05, Vol.52 (8), p.2419-2427

2004

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Quantum size effect in electron transmission through Cu and Ag films on W(110)

Surface science, 1983-04, Vol.127 (2), p.183-199

1983

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The structure of Sb-terminated GaAs(001) surfaces

Surface science, 1999-08, Vol.436 (1), p.L707-L714

1999

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Optical characterization of pure ZnSe films grown on GaAs

Applied physics letters, 1993-05, Vol.62 (19), p.2387-2389

1993

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A group-IV ferromagnetic semiconductor: [Mn.sub.x][Ge.sub.1-x]

Science (American Association for the Advancement of Science), 2002-01, Vol.295 (5555), p.651

2002

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Surface adatom-adatom coordination and orientation determined by low energy Auger electron and photoelectron diffraction due to adatom emission

Surface science, 1994-04, Vol.306 (1), p.L555-L562

Jonker, B.T.

1994

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Optical transitions in (ZnCo)Se and (ZnFe)Se: Role of an effective [ital p]--[ital d] exchange (invited)

Journal of applied physics, 1994-05, Vol.75:10

1994

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A compact flange-mounted electron beam source

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1990-09, Vol.8 (5), p.3883-3886

Jonker, B. T.

1990

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Comment on “The growth of Fe overlayers on Ag(100)” by G.C. Smith, H.A. Padmore and C. Norris

Surface science, 1986-07, Vol.172 (3), p.L568-L570

1986

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Thin film quantum size effects. Pt. 2:The effect of defect structure at the film/substrate interface

Surface science, 1984, Vol.146 (2/3), p.511-526

1984

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Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2

Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts

Anomalous temperature-dependent spin-valley polarization in monolayer WS2

Progress toward electrical injection of spin-polarized electrons into semiconductors

Electrical injection and detection of spin accumulation in Ge at room temperature

Information Processing With Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation, and Detection

Electrical Spin Injection and Transport in Semiconductor Spintronic Devices

Spin nomenclature for semiconductors and magnetic metals

A group-IV ferromagnetic semiconductor: MnxGe1-x

Solid phase epitaxial growth of 3C–SiC thin film on Si and annihilation of nanopores

Interfacial phase formation during growth of ferromagnetic CdCr 2Se 4 on AlGaAs and ZnSe/AlGaAs

Growth of ferromagnetic nanoparticles in Ge:Fe thin films

Spin injection across (110) interfaces: Fe∕GaAs(110) spin-light-emitting diodes

Phosphorus doping of silicon at substrate temperatures above 600 °C

Interfacial phase formation during growth of ferromagnetic CdCr2Se4 on AlGaAs and ZnSe/AlGaAs

Formation of Cr–germanide nanoparticles during growth of epitaxial Ge–Cr thin films

Quantum size effect in electron transmission through Cu and Ag films on W(110)

The structure of Sb-terminated GaAs(001) surfaces

Optical characterization of pure ZnSe films grown on GaAs

A group-IV ferromagnetic semiconductor: [Mn.sub.x][Ge.sub.1-x]

Surface adatom-adatom coordination and orientation determined by low energy Auger electron and photoelectron diffraction due to adatom emission

Optical transitions in (ZnCo)Se and (ZnFe)Se: Role of an effective [ital p]--[ital d] exchange (invited)

A compact flange-mounted electron beam source

Comment on “The growth of Fe overlayers on Ag(100)” by G.C. Smith, H.A. Padmore and C. Norris

Thin film quantum size effects. Pt. 2:The effect of defect structure at the film/substrate interface

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