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Bidirectional Soft Switching Push-Pull Resonant Converter Over Wide Range of Battery Voltages

IEEE transactions on power electronics, 2021-11, Vol.36 (11), p.12251-12267

2021

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High Step-Up Quasi-Resonant Converter Featuring Minimized Switching Loss Over Wide Input Voltage Range

IEEE transactions on industrial electronics (1982), 2021-11, Vol.68 (11), p.10784-10795

2021

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Conserved roles of mouse DUX and human DUX4 in activating cleavage-stage genes and MERVL/HERVL retrotransposons

Nature genetics, 2017-06, Vol.49 (6), p.925-934

2017

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Highly Efficient Current-Fed Half-Bridge Resonant Converter for Pulse Power Applications

IEEE transactions on power electronics, 2022-03, Vol.37 (3), p.3192-3204

2022

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Neurogenin and NeuroD direct transcriptional targets and their regulatory enhancers

The EMBO journal, 2007-12, Vol.26 (24), p.5093-5108

2007

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NuRD and CAF-1-mediated silencing of the D4Z4 array is modulated by DUX4-induced MBD3L proteins

eLife, 2018-03, Vol.7

2018

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Human body model electrostatic discharge tester using metal oxide semiconductor‐controlled thyristors

ETRI journal, 2023-06, Vol.45 (3), p.543-550

2023

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Power module stray inductance extraction: Theoretical and experimental analysis

ETRI Journal, 2021, 43(5), , pp.891-899

2021

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Noise mitigation in 12‐to‐5 V DC‐DC converter using an embedded metal layout strategy

IEEJ transactions on electrical and electronic engineering, 2021-09, Vol.16 (9), p.1289-1291

2021

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Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study

Micromachines (Basel), 2019-12, Vol.11 (1), p.53

2019

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Power Limiter with PIN Diode Embedded in Cavity to Minimize Parasitic Inductance

Journal of Electromagnetic Engineering and Science, 2022-11, Vol.22 (6), p.686-688

2022

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Integrated microHall magnetometer to measure the magnetic properties of nanoparticles

Lab on a chip, 2017-11, Vol.17 (23), p.4000-4007

2017

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C-Band GaN Dual-Feedback Low-Noise Amplifier MMIC with High-Input Power Robustness

Journal of Electromagnetic Engineering and Science, 2022-11, Vol.22 (6), p.678-685

2022

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High temperature storage test and its effect on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors

Current Applied Physics, 2017, 17(2), , pp.157-161

2017

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ZEB1 Imposes a Temporary Stage-Dependent Inhibition of Muscle Gene Expression and Differentiation via CtBP-Mediated Transcriptional Repression

Molecular and Cellular Biology, 2013-04, Vol.33 (7), p.1368-1382

2013

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Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs

IEEE electron device letters, 2017-04, Vol.38 (4), p.441-444

2017

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Effects of DC and AC stress on the VT shift of AlGaN/GaN MIS-HEMTs

Current Applied Physics, 2022, 39(0), , pp.128-132

2022

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Geminin regulates neuronal differentiation by antagonizing Brg1 activity

Genes & development, 2005-07, Vol.19 (14), p.1723-1734

2005

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Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

Crystals (Basel), 2021-11, Vol.11 (11), p.1414

2021

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Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.46-52

2018

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Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures

Solid-state electronics, 2018-02, Vol.140, p.12-17

2018

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Highly Efficient Quasi-Single-Stage AC-DC Converter Employing Bidirectional Switch

IEEE transactions on transportation electrification, 2022-06, Vol.8 (2), p.2746-2757

2022

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Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure

Applied sciences, 2018-06, Vol.8 (6), p.974

2018

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Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact

Journal of the Korean Physical Society, 2020, 76(9), , pp.837-842

2020

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GaN MIS-HEMT PA MMICs for 5G Mobile Devices

Journal of the Korean Physical Society, 2019, 74(2), , pp.196-200

2019

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Bidirectional Soft Switching Push-Pull Resonant Converter Over Wide Range of Battery Voltages

High Step-Up Quasi-Resonant Converter Featuring Minimized Switching Loss Over Wide Input Voltage Range

Conserved roles of mouse DUX and human DUX4 in activating cleavage-stage genes and MERVL/HERVL retrotransposons

Highly Efficient Current-Fed Half-Bridge Resonant Converter for Pulse Power Applications

Neurogenin and NeuroD direct transcriptional targets and their regulatory enhancers

NuRD and CAF-1-mediated silencing of the D4Z4 array is modulated by DUX4-induced MBD3L proteins

Human body model electrostatic discharge tester using metal oxide semiconductor‐controlled thyristors

Power module stray inductance extraction: Theoretical and experimental analysis

Noise mitigation in 12‐to‐5 V DC‐DC converter using an embedded metal layout strategy

Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study

Power Limiter with PIN Diode Embedded in Cavity to Minimize Parasitic Inductance

Integrated microHall magnetometer to measure the magnetic properties of nanoparticles

C-Band GaN Dual-Feedback Low-Noise Amplifier MMIC with High-Input Power Robustness

High temperature storage test and its effect on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors

ZEB1 Imposes a Temporary Stage-Dependent Inhibition of Muscle Gene Expression and Differentiation via CtBP-Mediated Transcriptional Repression

Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs

Effects of DC and AC stress on the VT shift of AlGaN/GaN MIS-HEMTs

Geminin regulates neuronal differentiation by antagonizing Brg1 activity

Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric

Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures

Highly Efficient Quasi-Single-Stage AC-DC Converter Employing Bidirectional Switch

Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure

Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact

GaN MIS-HEMT PA MMICs for 5G Mobile Devices

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