UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Performance evaluation of GaN light-emitting diodes using transferred graphene as current spreading layer

Journal of applied physics, 2014-02, Vol.115 (5)

2014

Volltextzugriff (PDF)

Characterization of n-Ge/i-Ge/p-Si PIN photo-diode

Materials science in semiconductor processing, 2014-06, Vol.22, p.37-43

2014

Volltextzugriff (PDF)

Growth of a Ge layer on 8 in. Si (100) substrates by rapid thermal chemical vapor deposition

Materials science in semiconductor processing, 2014-05, Vol.21, p.58-65

2014

Volltextzugriff (PDF)

Selective Chemical Wet Etching of Si0.8Ge0.2/Si Multilayer

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2013, 13(6), 54, pp.668-675

2013

Volltextzugriff (PDF)

Fabrication of PIN photo-diode from p-Ge/i-Ge/n-Si hetero junction structure

Materials science in semiconductor processing, 2014-01, Vol.17, p.74-80

2014

Volltextzugriff (PDF)

A comparative study of IR Ge photodiodes with a Schottky barrier contact and metal-semiconductor-metal structure

Journal of the Korean Physical Society, 2014, 65(12), , pp.2100-2106

2014

Volltextzugriff (PDF)

Characterization of n-type Ge layers on Si (100) substrates grown by rapid thermal chemical vapor deposition

Materials science in semiconductor processing, 2013-12, Vol.16 (6), p.1405-1409

2013

Volltextzugriff (PDF)

Optical properties of hybrid Si1−xGex/Si quantum dot/quantum well structures grown on Si by RPCVD

Materials science in semiconductor processing, 2014-01, Vol.17, p.178-183

2014

Volltextzugriff (PDF)

Nanoscale dry etching of germanium by using inductively coupled CF4 plasma

Electronic Materials Letters, 2012, 8(4), , pp.423-428

2012

Volltextzugriff (PDF)

Electroluminescence of n-Ge/i-Ge/p-Si heterojunction PIN LEDs

Journal of the Korean Physical Society, 2014, 64(10), , pp.1430-1436

2014

Volltextzugriff (PDF)

Electroluminescence of n-Ge/i-Ge/p-Si Hetero Junction PIN LEDs

ECS transactions, 2013, Vol.58 (8), p.119-132

2013

Volltextzugriff (PDF)

Effect of phosphorus doping concentration on n-type Ge layer growth

Journal of the Korean Physical Society, 2014, 64(5), , pp.715-721

2014

Volltextzugriff (PDF)

Electroluminescence of p-Ge/i-Ge/n-Si heterojunction PIN LEDs

Journal of the Korean Physical Society, 2014, 64(1), , pp.98-103

2014

Volltextzugriff (PDF)

Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD

Journal of the Korean Physical Society, 2014, 64(3), , pp.443-450

2014

Volltextzugriff (PDF)

Optical characterization of tensile-strained a p-type Ge layer on a Si (100) substrate

Journal of the Korean Physical Society, 2013, 63(5), , pp.1034-1039

2013

Volltextzugriff (PDF)

Growth and characterization of Si1−xGetx QDs on Si/Si0.8Ge0.2 layer

Electronic materials letters, 2012-12, Vol.8 (6), p.559-563

2012

Volltextzugriff (PDF)

Growth and Characterization of Si1-xGex QDs on Si/Si0.8Ge0.2 Layer

Electronic Materials Letters, 2012, 8(6), , pp.559-563

2012

Volltextzugriff (PDF)

Ni-assisted Fabrication of GaN Based Surface Nano-textured Light Emitting Diodes for Improved Light Output Power

Journal of semiconductor technology and science, 2015, Vol.15 (4), p.454-461

2015

Volltextzugriff (PDF)

Impact of interlayer processing conditions on the performance of GaN light-emitting diode with specific NiOx/graphene electrode

ACS applied materials & interfaces, 2013-02, Vol.5 (3), p.958-964

2013

Volltextzugriff (PDF)

Selective Chemical Wet Etching of Si 0.8 Ge 0.2 /Si Multilayer

Journal of semiconductor technology and science, 2013, Vol.13 (6), p.668-675

2013

Volltextzugriff (PDF)

Solution-processed multidimensional ZnO/CuO heterojunction as ultraviolet sensing

Optical materials express, 2015-08, Vol.5 (8), p.1752-1758

2015

Volltextzugriff (PDF)

Corrigendum to ‘Light enhancement of surface nano-textured GaN based light emitting diodes using self-assembled Ni nano-masks’ Optik 127 (2016) 1622–1626

Optik (Stuttgart), 2016-06, Vol.127 (11), p.4920-4920

2016

Volltextzugriff (PDF)

Light enhancement of surface nano-textured GaN based light emitting diodes using self-assembled Ni nano-masks

Optik (Stuttgart), 2016-02, Vol.127 (4), p.1622-1626

2016

Volltextzugriff (PDF)

Air-ring microstructure arrays for enhanced light extraction from a face-up light-emitting diode

Optics letters, 2013-05, Vol.38 (9), p.1491

2013

Volltextzugriff (PDF)

Impact of Interlayer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiO x /Graphene Electrode

ACS applied materials & interfaces, 2013-02, Vol.5 (3), p.958-964

2013

Volltextzugriff (PDF)

1 – 25 von 341

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(261)
Mit Volltextzugriff
(262)

Publikationsform

Sprache

Englisch
(313)
Japanisch
(38)
Koreanisch
(28)

Erscheinungsjahr

n.n

Thema

Science & Technology
(204)
Life Sciences & Biomedicine
(130)
Humans
(76)
Male
(60)
Technology
(58)
Female
(57)
Physical Sciences
(51)
Adult
(45)
Middle Aged
(42)
Kidney Transplantation
(38)
Physics
(31)
Materials Science
(30)
Materials Science, Multidisciplinary
(26)
Transplantation
(25)
Animals
(23)
Risk Factors
(23)
Engineering
(22)
Original
(22)
Physics, Applied
(20)
Exact Sciences And Technology
(19)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 7 Tagen
(1)
... seit 90 Tagen
(8)

Menü

Weitere Dienste

Einstellungen

Performance evaluation of GaN light-emitting diodes using transferred graphene as current spreading layer

Characterization of n-Ge/i-Ge/p-Si PIN photo-diode

Growth of a Ge layer on 8 in. Si (100) substrates by rapid thermal chemical vapor deposition

Selective Chemical Wet Etching of Si0.8Ge0.2/Si Multilayer

Fabrication of PIN photo-diode from p-Ge/i-Ge/n-Si hetero junction structure

A comparative study of IR Ge photodiodes with a Schottky barrier contact and metal-semiconductor-metal structure

Characterization of n-type Ge layers on Si (100) substrates grown by rapid thermal chemical vapor deposition

Optical properties of hybrid Si1−xGex/Si quantum dot/quantum well structures grown on Si by RPCVD

Nanoscale dry etching of germanium by using inductively coupled CF4 plasma

Electroluminescence of n-Ge/i-Ge/p-Si heterojunction PIN LEDs

Electroluminescence of n-Ge/i-Ge/p-Si Hetero Junction PIN LEDs

Effect of phosphorus doping concentration on n-type Ge layer growth

Electroluminescence of p-Ge/i-Ge/n-Si heterojunction PIN LEDs

Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD

Optical characterization of tensile-strained a p-type Ge layer on a Si (100) substrate

Growth and characterization of Si1−xGetx QDs on Si/Si0.8Ge0.2 layer

Growth and Characterization of Si1-xGex QDs on Si/Si0.8Ge0.2 Layer

Ni-assisted Fabrication of GaN Based Surface Nano-textured Light Emitting Diodes for Improved Light Output Power

Impact of interlayer processing conditions on the performance of GaN light-emitting diode with specific NiOx/graphene electrode

Selective Chemical Wet Etching of Si 0.8 Ge 0.2 /Si Multilayer

Solution-processed multidimensional ZnO/CuO heterojunction as ultraviolet sensing

Corrigendum to ‘Light enhancement of surface nano-textured GaN based light emitting diodes using self-assembled Ni nano-masks’ Optik 127 (2016) 1622–1626

Light enhancement of surface nano-textured GaN based light emitting diodes using self-assembled Ni nano-masks

Air-ring microstructure arrays for enhanced light extraction from a face-up light-emitting diode

Impact of Interlayer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiO x /Graphene Electrode

Suchergebnisse filtern