UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 2.482

Sortiert nach

Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

IEEE electron device letters, 2007-08, Vol.28 (8), p.743-745

2007

Volltextzugriff (PDF)

Modeling and Parameter Extraction for the Series Resistance in Thin-Film Transistors

IEEE transactions on electron devices, 2009-03, Vol.56 (3), p.431-440

2009

Volltextzugriff (PDF)

Accurate Extraction of Effective Channel Length and Source/Drain Series Resistance in Ultrashort-Channel MOSFETs by Iteration Method

IEEE transactions on electron devices, 2008-10, Vol.55 (10), p.2779-2784

2008

Volltextzugriff (PDF)

Independent Double-Gate Fin SONOS Flash Memory Fabricated With Sidewall Spacer Patterning

IEEE transactions on electron devices, 2009-08, Vol.56 (8), p.1721-1728

2009

Volltextzugriff (PDF)

Design optimization of gate-all-around (GAA) MOSFETs

IEEE transactions on nanotechnology, 2006-05, Vol.5 (3), p.186-191

2006

Volltextzugriff (PDF)

Design and Fabrication of Asymmetric MOSFETs Using a Novel Self-Aligned Structure

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2969-2974

2007

Volltextzugriff (PDF)

A Simple Figure of Merit of RF MOSFET for Low-Noise Amplifier Design

IEEE electron device letters, 2008-12, Vol.29 (12), p.1380-1382

2008

Volltextzugriff (PDF)

100-nm n-/p-channel I-MOS using a novel self-aligned structure

IEEE electron device letters, 2005-04, Vol.26 (4), p.261-263

2005

Volltextzugriff (PDF)

The analysis of dark signals in the CMOS APS imagers from the characterization of test structures

IEEE transactions on electron devices, 2004-02, Vol.51 (2), p.178-184

2004

Volltextzugriff (PDF)

SET/CMOS hybrid process and multiband filtering circuits

IEEE transactions on electron devices, 2005-08, Vol.52 (8), p.1845-1850

2005

Volltextzugriff (PDF)

Experimental Investigation of Quasi-Ballistic Carrier Transport Characteristics in 10-nm Scale MOSFETs

IEEE transactions on nanotechnology, 2011-09, Vol.10 (5), p.975-979

2011

Volltextzugriff (PDF)

Effect of source extension junction depth and substrate doping concentration on I-MOS device characteristics

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1282-1285

2006

Volltextzugriff (PDF)

A Vertical 4-Bit SONOS Flash Memory and a Unique 3-D Vertical nor Array Structure

IEEE transactions on nanotechnology, 2010-01, Vol.9 (1), p.70-77

2010

Volltextzugriff (PDF)

A study of conduction of ZnO film/p-Si heterojunction fabricated by photoinduced electrodeposition under illumination

Journal of physics. D, Applied physics, 2010-09, Vol.43 (36), p.365403-365403

2010

Volltextzugriff (PDF)

Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.1006-1014

2011

Volltextzugriff (PDF)

A novel biasing scheme for I-MOS (impact-ionization MOS) devices

IEEE transactions on nanotechnology, 2005-05, Vol.4 (3), p.322-325

2005

Volltextzugriff (PDF)

Control of macrophage responses on hydrophobic and hydrophilic carbon nanostructures

Carbon (New York), 2011-05, Vol.49 (6), p.2092-2103

2011

Volltextzugriff (PDF)

Hypoxia-Inducible Factor-1α and Excision Repair Cross-Complementing 1 in Patients with Small Cell Lung Cancer Who Received Front-Line Platinum-Based Chemotherapy: A Retrospective Study

Journal of thoracic oncology, 2012-03, Vol.7 (3), p.528-534

2012

Volltextzugriff (PDF)

Silicon single-electron transistors with sidewall depletion gates and their application to dynamic single-electron transistor logic

IEEE transactions on electron devices, 2002-04, Vol.49 (4), p.627-635

2002

Volltextzugriff (PDF)

Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures

Applied physics letters, 2006-08, Vol.89 (6)

2006

Volltextzugriff (PDF)

Performance improvement of scaled-down top-contact OTFTs by two-step-deposition of pentacene

IEEE electron device letters, 2005-12, Vol.26 (12), p.903-905

2005

Volltextzugriff (PDF)

Clinical significance of ERCC2 haplotype-tagging single nucleotide polymorphisms in patients with unresectable non-small cell lung cancer treated with first-line platinum-based chemotherapy

Lung cancer (Amsterdam, Netherlands), 2012-09, Vol.77 (3), p.578-584

2012

Volltextzugriff (PDF)

The effects of deuterium annealing on the reduction of dark currents in the CMOS APS

IEEE transactions on electron devices, 2004-08, Vol.51 (8), p.1346-1349

2004

Volltextzugriff (PDF)

Fabrication and program/erase characteristics of 30-nm SONOS nonvolatile memory devices

IEEE transactions on nanotechnology, 2003-12, Vol.2 (4), p.258-264

2003

Volltextzugriff (PDF)

An analytical channel thermal noise model for deep-submicron MOSFETs with short channel effects

Solid-state electronics, 2007-07, Vol.51 (7), p.1034-1038

2007

Volltextzugriff (PDF)

1 – 25 von 2.482

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(2.073)
Mit Volltextzugriff
(2.383)

Publikationsform

1 weiteren anzeigen...

Weniger anzeigen...

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(1.393)
Life Sciences & Biomedicine
(876)
Humans
(648)
Female
(508)
Male
(507)
Physical Sciences
(408)
Middle Aged
(374)
Technology
(304)
Aged
(298)
Physics
(250)
Cardiovascular System & Cardiology
(224)
Cardiovascular
(217)
Cardiac & Cardiovascular Systems
(213)
Adult
(204)
Engineering
(201)
Biological And Medical Sciences
(181)
Animals
(176)
Physics, Applied
(174)
Medical Sciences
(170)
Chemistry
(166)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(6)
... seit 90 Tagen
(10)

Menü

Weitere Dienste

Einstellungen

Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

Modeling and Parameter Extraction for the Series Resistance in Thin-Film Transistors

Accurate Extraction of Effective Channel Length and Source/Drain Series Resistance in Ultrashort-Channel MOSFETs by Iteration Method

Independent Double-Gate Fin SONOS Flash Memory Fabricated With Sidewall Spacer Patterning

Design optimization of gate-all-around (GAA) MOSFETs

Design and Fabrication of Asymmetric MOSFETs Using a Novel Self-Aligned Structure

A Simple Figure of Merit of RF MOSFET for Low-Noise Amplifier Design

100-nm n-/p-channel I-MOS using a novel self-aligned structure

The analysis of dark signals in the CMOS APS imagers from the characterization of test structures

SET/CMOS hybrid process and multiband filtering circuits

Experimental Investigation of Quasi-Ballistic Carrier Transport Characteristics in 10-nm Scale MOSFETs

Effect of source extension junction depth and substrate doping concentration on I-MOS device characteristics

A Vertical 4-Bit SONOS Flash Memory and a Unique 3-D Vertical nor Array Structure

A study of conduction of ZnO film/p-Si heterojunction fabricated by photoinduced electrodeposition under illumination

Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory

A novel biasing scheme for I-MOS (impact-ionization MOS) devices

Control of macrophage responses on hydrophobic and hydrophilic carbon nanostructures

Hypoxia-Inducible Factor-1α and Excision Repair Cross-Complementing 1 in Patients with Small Cell Lung Cancer Who Received Front-Line Platinum-Based Chemotherapy: A Retrospective Study

Silicon single-electron transistors with sidewall depletion gates and their application to dynamic single-electron transistor logic

Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures

Performance improvement of scaled-down top-contact OTFTs by two-step-deposition of pentacene

Clinical significance of ERCC2 haplotype-tagging single nucleotide polymorphisms in patients with unresectable non-small cell lung cancer treated with first-line platinum-based chemotherapy

The effects of deuterium annealing on the reduction of dark currents in the CMOS APS

Fabrication and program/erase characteristics of 30-nm SONOS nonvolatile memory devices

An analytical channel thermal noise model for deep-submicron MOSFETs with short channel effects

Suchergebnisse filtern