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Design and Characterization of High-Voltage 4H-SiC p-IGBTs

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1912-1919

2008

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Development of 15 kV 4H-SiC IGBTs

Materials science forum, 2012-05, Vol.717-720, p.1135-1138

2012

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Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.257-260

2012

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20 kV 4H-SiC N-IGBTs

Materials science forum, 2014-02, Vol.778-780, p.1030-1033

2014

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15 kV IGBTs in 4H-SiC

Materials science forum, 2013-01, Vol.740-742, p.954-957, Article 954

2013

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16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

Materials science forum, 2013-01, Vol.740-742, p.895-898

2013

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Performance of 60 A, 1200 V 4H-SiC DMOSFETs

Materials science forum, 2009-03, Vol.615-617, p.749-752

2009

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Critical Technical Issues in High Voltage SiC Power Devices

Materials science forum, 2009-01, Vol.600-603, p.895-900

2009

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Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices

Materials science forum, 2007-09, Vol.556-557, p.667-670

2007

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15 kV n-GTOs in 4H-SiC

Materials science forum, 2019-07, Vol.963, p.651-654

2019

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Fabrication and Characterization of 5 kV IGBTs on 4H-SiC

MRS proceedings, 2006, Vol.911, Article 0911-B10-05

2006

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Next generation planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with low specific on-resistance and high switching speed

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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950V, 8.7mohm-cm2 High Speed 4H-SiC Power DMOSFETs

MRS proceedings, 2006, Vol.911, Article 0911-B13-04

2006

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Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes

Materials science forum, 2018-06, Vol.924, p.633-636

2018

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An Analysis of Forward Conduction Characteristics of Ultra High Voltage 4H-SiC N-IGBTs

Materials Science Forum, 2016-05, Vol.858, p.945-948

2016

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A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching

Materials science forum, 2009, Vol.600-603, p.1183-1186

2009

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1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70

Journal of electronic materials, 2008-05, Vol.37 (5), p.662-665

2008

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1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer

Materials science forum, 2014-02, Vol.778-780, p.939-942

2014

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A 10-kV Monolithic Darlington Transistor With \beta of 336 in 4H-SiC

IEEE electron device letters, 2009-02, Vol.30 (2), p.142-144

2009

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1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

Materials science forum, 2011, Vol.679-680, p.633-636

2011

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A 10-kV Monolithic Darlington Transistor With forced of 336 in 4H-SiC

IEEE electron device letters, 2009, Vol.30 (2), p.142-144

2009

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16 kV, 1 cm super(2), 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

Materials science forum, 2013-01, Vol.740-742, p.895-898

2013

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12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

Materials science forum, 2009, Vol.600-603, p.1187-1190

2009

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Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications

Materials science forum, 2012-05, Vol.717-720, p.1059-1064

2012

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Design and Characterization of High-Voltage 4H-SiC p-IGBTs

Development of 15 kV 4H-SiC IGBTs

Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor

Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

20 kV 4H-SiC N-IGBTs

15 kV IGBTs in 4H-SiC

16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

Performance of 60 A, 1200 V 4H-SiC DMOSFETs

Critical Technical Issues in High Voltage SiC Power Devices

Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices

15 kV n-GTOs in 4H-SiC

Fabrication and Characterization of 5 kV IGBTs on 4H-SiC

Next generation planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with low specific on-resistance and high switching speed

950V, 8.7mohm-cm2 High Speed 4H-SiC Power DMOSFETs

Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes

An Analysis of Forward Conduction Characteristics of Ultra High Voltage 4H-SiC N-IGBTs

A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching

1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70

1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer

A 10-kV Monolithic Darlington Transistor With \beta of 336 in 4H-SiC

1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

A 10-kV Monolithic Darlington Transistor With forced of 336 in 4H-SiC

16 kV, 1 cm super(2), 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications

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