UB Paderborn / Katalog / Suche / in CDI

Impact of Low Temperatures $({ on the Total Ionizing Dose Response and ELDRS in Gated Lateral PNP BJTs

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.3081-3086

2012

Link zum Volltext
IEEE_Xplore

Failure Modes and Hardness Assurance for Linear Integrated Circuits in Space Applications

IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.1966-1972

2010

Link zum Volltext
IEEE_Xplore

Radiation Effects in Optoelectronic Devices

IEEE transactions on nuclear science, 2013-06, Vol.60 (3), p.2054-2073

Johnston, A. H.

2013

Link zum Volltext
IEEE_Xplore

Proton displacement damage in light-emitting and laser diodes

IEEE transactions on nuclear science, 2001-10, Vol.48 (5), p.1713-1720

Johnston, A.H.

2001

Link zum Volltext
IEEE_Xplore

Radiation effects in light-emitting and laser diodes

IEEE transactions on nuclear science, 2003-06, Vol.50 (3), p.689-703

Johnston, A.H.

2003

Link zum Volltext
IEEE_Xplore

A new class of single event hard errors [DRAM cells]

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-12, Vol.41 (6), p.2043-2048

1994

Link zum Volltext
IEEE_Xplore

Dark current degradation of near infrared avalanche photodiodes from proton irradiation

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3572-3578

2004

Link zum Volltext
IEEE_Xplore

Hardness assurance methods for radiation degradation of optocouplers

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2649-2656

2005

Link zum Volltext
IEEE_Xplore

Testing and Qualifying Linear Integrated Circuits for Radiation Degradation in Space

IEEE transactions on nuclear science, 2006-08, Vol.53 (4), p.1779-1786

2006

Link zum Volltext
IEEE_Xplore

Single-Event Transients in Voltage Regulators

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3455-3461

2006

Link zum Volltext
IEEE_Xplore

Radiation Damage in Power MOSFET Optocouplers

IEEE transactions on nuclear science, 2007-08, Vol.54 (4), p.1104-1109

2007

Link zum Volltext
IEEE_Xplore

Latent damage in CMOS devices from single-event latchup

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.3009-3015

2002

Link zum Volltext
IEEE_Xplore

Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation

Applied physics letters, 2002-02, Vol.80 (7), p.1282-1284

2002

Link zum Volltext

Verfügbarkeit prüfen

Proton damage in LEDs with wavelengths above the silicon wavelength cutoff

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3558-3563

2004

Link zum Volltext
IEEE_Xplore

The influence of structural characteristics on the response of silicon avalanche photodiodes to proton irradiation

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.1974-1981

2003

Link zum Volltext
IEEE_Xplore

2003 nuclear and space radiation effects conference comments by the general chairman

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.1762-1763

Johnston, A.H.

2003

Link zum Volltext
IEEE_Xplore

A proposed hardness assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment

IEEE transactions on nuclear science, 1997-12, Vol.44 (6), p.1981-1988

1997

Link zum Volltext
IEEE_Xplore

In-flight annealing of displacement damage in GaAs LEDs: a Galileo story

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.1991-1997

2003

Link zum Volltext
IEEE_Xplore

Measurements of Radiation Effects on Optoelectronics Conducted by the Jet Propulsion Laboratory

2006 IEEE Radiation Effects Data Workshop, 2006, p.72-76

2006

Link zum Volltext
IEEE_Xplore

Space Radiation Effects and Reliability Considerations for Micro- and Optoelectronic Devices

IEEE transactions on device and materials reliability, 2010-12, Vol.10 (4), p.449-459

Johnston, A H

2010

Link zum Volltext
IEEE_Xplore

Single Event Transients (SETs) in the RH108 Operational Amplifier in Analog Circuits

2006 IEEE Radiation Effects Data Workshop, 2006, p.154-159

2006

Link zum Volltext
IEEE_Xplore

Total ionizing dose effects in bipolar and BiCMOS devices

IEEE Radiation Effects Data Workshop, 2005, 2005, p.144-148

2005

Link zum Volltext
IEEE_Xplore

Scaling and Radiation Effects in Silicon Transistors

Microelectronics to Nanoelectronics, 2013, p.29-60

1, 2013

Link zum Volltext

Verfügbarkeit prüfen

Super Recovery of Total Dose Damage in MOS Devices

IEEE transactions on nuclear science, 1984-12, Vol.31 (6), p.1427-1433

Johnston, Allan H.

1984

Link zum Volltext
IEEE_Xplore

Annealing of Total Dose Damage in the Z8OA Microprocessor

IEEE transactions on nuclear science, 1983-12, Vol.30 (6), p.4251-4255

Johnston, Allan H.

1983

Link zum Volltext
IEEE_Xplore

Menü

Weitere Dienste

Einstellungen

Impact of Low Temperatures $({ on the Total Ionizing Dose Response and ELDRS in Gated Lateral PNP BJTs

Failure Modes and Hardness Assurance for Linear Integrated Circuits in Space Applications

Radiation Effects in Optoelectronic Devices

Proton displacement damage in light-emitting and laser diodes

Radiation effects in light-emitting and laser diodes

A new class of single event hard errors [DRAM cells]

Dark current degradation of near infrared avalanche photodiodes from proton irradiation

Hardness assurance methods for radiation degradation of optocouplers

Testing and Qualifying Linear Integrated Circuits for Radiation Degradation in Space

Single-Event Transients in Voltage Regulators

Radiation Damage in Power MOSFET Optocouplers

Latent damage in CMOS devices from single-event latchup

Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation

Proton damage in LEDs with wavelengths above the silicon wavelength cutoff

The influence of structural characteristics on the response of silicon avalanche photodiodes to proton irradiation

2003 nuclear and space radiation effects conference comments by the general chairman

A proposed hardness assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment

In-flight annealing of displacement damage in GaAs LEDs: a Galileo story

Measurements of Radiation Effects on Optoelectronics Conducted by the Jet Propulsion Laboratory

Space Radiation Effects and Reliability Considerations for Micro- and Optoelectronic Devices

Single Event Transients (SETs) in the RH108 Operational Amplifier in Analog Circuits

Total ionizing dose effects in bipolar and BiCMOS devices

Scaling and Radiation Effects in Silicon Transistors

Super Recovery of Total Dose Damage in MOS Devices

Annealing of Total Dose Damage in the Z8OA Microprocessor

Suchergebnisse filtern