Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Sortiert nach
Open Access
    Datensatz exportieren als...
  • BibTeX
Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors
IEEE electron device letters, 2008-04, Vol.29 (4), p.287-289
2008
    Datensatz exportieren als...
  • BibTeX
A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.132-140
2011
Open Access
    Datensatz exportieren als...
  • BibTeX
Measurement of Channel Temperature in GaN High-Electron Mobility Transistors
IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2895-2901
2009
Open Access
    Datensatz exportieren als...
  • BibTeX
Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs
Applied physics letters, 2022-02, Vol.120 (8)
2022
Link zum Volltext
Verfügbarkeit prüfen
Open Access
    Datensatz exportieren als...
  • BibTeX
A model for the critical voltage for electrical degradation of GaN high electron mobility transistors
Microelectronics and reliability, 2010-06, Vol.50 (6), p.767-773
2010
Link zum Volltext
Verfügbarkeit prüfen
    Datensatz exportieren als...
  • BibTeX
TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs
IEEE electron device letters, 2008-10, Vol.29 (10), p.1098-1100
2008
    Datensatz exportieren als...
  • BibTeX
Role of stress voltage on structural degradation of GaN high-electron-mobility transistors
Microelectronics and reliability, 2011-02, Vol.51 (2), p.201-206
2011
Link zum Volltext
Verfügbarkeit prüfen
    Datensatz exportieren als...
  • BibTeX
Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications
2014 IEEE International Reliability Physics Symposium, 2014, p.6C.5.1-6C.5.4
2014
    Datensatz exportieren als...
  • BibTeX
High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate
Microelectronics and reliability, 2010-06, Vol.50 (6), p.758-762
2010
Link zum Volltext
Verfügbarkeit prüfen
    Datensatz exportieren als...
  • BibTeX
Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale
IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2667-2674
2012
Open Access
    Datensatz exportieren als...
  • BibTeX
Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors
Applied physics letters, 2009-07, Vol.95 (3), p.033510-033510-3
2009
Link zum Volltext
Verfügbarkeit prüfen
Open Access
    Datensatz exportieren als...
  • BibTeX
Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors
2011 International Reliability Physics Symposium, 2011, p.4E.3.1-4E.3.4
2011
    Datensatz exportieren als...
  • BibTeX
Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited)
2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-7
2024
    Datensatz exportieren als...
  • BibTeX
A systems engineering approach to collaborative coordination of UAS in the NAS with safety guarantees
2014 Integrated Communications, Navigation and Surveillance Conference (ICNS) Conference Proceedings, 2014, p.U1-1-U1-12
2014
Open Access
    Datensatz exportieren als...
  • BibTeX
Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors
Applied physics letters, 2010-06, Vol.96 (23)
2010
Link zum Volltext
Verfügbarkeit prüfen
    Datensatz exportieren als...
  • BibTeX
Electromigration in strapped metal layers with large dimensions for lateral power device applications
2014 IEEE International Reliability Physics Symposium, 2014, p.2A.4.1-2A.4.4
2014
Open Access
    Datensatz exportieren als...
  • BibTeX
Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature
IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3132-3138
2017
    Datensatz exportieren als...
  • BibTeX
Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs
IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.890-895
2019
    Datensatz exportieren als...
  • BibTeX
Impact of Gate Offset on PBTI of p-GaN Gate HEMTs
2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.P21-1-P21-6
2022
Open Access
    Datensatz exportieren als...
  • BibTeX
Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors
Applied physics letters, 2012-04, Vol.100 (17), p.172109-172109-3
2012
Link zum Volltext
Verfügbarkeit prüfen
    Datensatz exportieren als...
  • BibTeX
Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors
2006 International Electron Devices Meeting, 2006, p.1-4
2006
    Datensatz exportieren als...
  • BibTeX
Strapped Cu interconnect for enhancing electromigration limit for power device application
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.368-371
2020
Open Access
    Datensatz exportieren als...
  • BibTeX
Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs
2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-5
2019
    Datensatz exportieren als...
  • BibTeX
A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors
IEEE electron device letters, 2008-07, Vol.29 (7), p.665-667
2008
    Datensatz exportieren als...
  • BibTeX
Current Crowding Impact on Electromigration in Al Interconnects
2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-6
2019
1 – 25 von 43
Suche als RSS-Feed
Suchergebnisse filtern
Filter anzeigen