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Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications

IEEE journal of selected topics in quantum electronics, 2006-11, Vol.12 (6), p.1489-1502

2006

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Phaeohyphomycotic cyst due to Cladosporium cladosporioides

Dermatology (Basel), 1998, Vol.197 (1), p.90

1998

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High-speed Germanium-on-SOI lateral PIN photodiodes

IEEE photonics technology letters, 2004-11, Vol.16 (11), p.2547-2549

2004

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MISDIAGNOSIS OF HOMOZYGOUS ALPHA-THALASSAEMIA 1 MAY OCCUR IF POLYMERASE CHAIN REACTION ALONE IS USED IN PRENATAL DIAGNOSIS

Prenatal diagnosis, 1997-06, Vol.17 (6), p.505-509

1997

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Elastic strain relaxation in free-standing SiGe/Si structures

Applied physics letters, 2004-02, Vol.84 (7), p.1093-1095

2004

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SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors

Applied physics letters, 2001-02, Vol.78 (9), p.1267-1269

2001

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Strain relaxation and threading dislocation density in helium-implanted and annealed Si1−xGex/Si(100) heterostructures

Journal of applied physics, 2004-05, Vol.95 (10), p.5347-5351

2004

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Coulomb blockade in a silicon/silicon–germanium two-dimensional electron gas quantum dot

Applied physics letters, 2004-05, Vol.84 (20), p.4047-4049

2004

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Effect of polyamic acids on interfacial shear strength in carbon fiber/aromatic thermoplastics

Journal of applied polymer science, 1990, Vol.41 (1-2), p.373-382

1990

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Extremely high electron mobility in Si/SiGe modulation-doped heterostructures

Applied physics letters, 1995-02, Vol.66 (9), p.1077-1079

1995

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Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy

Applied physics letters, 2001-10, Vol.79 (14), p.2148-2150

2001

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Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads

New journal of physics, 2005-11, Vol.7, p.246-246

2005

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High hole mobility in SiGe alloys for device applications

Applied physics letters, 1994-06, Vol.64 (23), p.3124-3126

1994

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Electron and hole mobility enhancement in strained SOI by wafer bonding

IEEE transactions on electron devices, 2002-09, Vol.49 (9), p.1566-1571

2002

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Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers

Journal of applied physics, 2002-11, Vol.92 (9), p.5027-5035

2002

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Quantum dots and etch-induced depletion of a silicon two-dimensional electron gas

Journal of applied physics, 2006-01, Vol.99 (2), p.023509-023509-7

2006

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Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD

IEEE electron device letters, 2000-03, Vol.21 (3), p.110

2000

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Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures

Physical review letters, 1994-12, Vol.73 (25), p.3447-3450

1994

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Quantum-ballistic transport in an etch-defined Si/SiGe quantum point contact

Applied physics letters, 2002-08, Vol.81 (9), p.1726-1728

2002

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The preparation and properties of polyarylate block copolymers by interfacial polycondensation

Journal of applied polymer science, 1990, Vol.41 (7-8), p.1651-1658

1990

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Absolute rate constants for the reaction of silylene with hydrogen, silane, and disilane

The Journal of chemical physics, 1988-02, Vol.88 (3), p.1678-1687

1988

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Electron transport properties of Si/SiGe heterostructures : measurements and device implications

Applied physics letters, 1993-08, Vol.63 (5), p.660-662

1993

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Raman scattering analysis of relaxed GexSi1-x alloy layers

Applied physics letters, 1993-04, Vol.62 (17), p.2069-2071

1993

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Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias

IEEE electron device letters, 2005-03, Vol.26 (3), p.178-180

2005

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Nucleation of dislocations in SiGe layers grown on (001)Si

Journal of applied physics, 1994-04, Vol.75 (8), p.3968-3977

1994

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Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications

Phaeohyphomycotic cyst due to Cladosporium cladosporioides

High-speed Germanium-on-SOI lateral PIN photodiodes

MISDIAGNOSIS OF HOMOZYGOUS ALPHA-THALASSAEMIA 1 MAY OCCUR IF POLYMERASE CHAIN REACTION ALONE IS USED IN PRENATAL DIAGNOSIS

Elastic strain relaxation in free-standing SiGe/Si structures

SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors

Strain relaxation and threading dislocation density in helium-implanted and annealed Si1−xGex/Si(100) heterostructures

Coulomb blockade in a silicon/silicon–germanium two-dimensional electron gas quantum dot

Effect of polyamic acids on interfacial shear strength in carbon fiber/aromatic thermoplastics

Extremely high electron mobility in Si/SiGe modulation-doped heterostructures

Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy

Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads

High hole mobility in SiGe alloys for device applications

Electron and hole mobility enhancement in strained SOI by wafer bonding

Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers

Quantum dots and etch-induced depletion of a silicon two-dimensional electron gas

Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD

Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures

Quantum-ballistic transport in an etch-defined Si/SiGe quantum point contact

The preparation and properties of polyarylate block copolymers by interfacial polycondensation

Absolute rate constants for the reaction of silylene with hydrogen, silane, and disilane

Electron transport properties of Si/SiGe heterostructures : measurements and device implications

Raman scattering analysis of relaxed GexSi1-x alloy layers

Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias

Nucleation of dislocations in SiGe layers grown on (001)Si

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