UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 69

Sortiert nach

Uncertainty Analysis of Two-Step and Three-Step Methods for Deembedding On-Wafer RF Transistor Measurements

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2195-2201

2008

Volltextzugriff (PDF)

An improved RF MOSFET model including scalable gate resistance and external inductances

2008 International SoC Design Conference, 2008, Vol.1, p.I-431-I-432

2008

Volltextzugriff (PDF)

Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application

Applied physics letters, 2016-04, Vol.108 (15)

2016

Volltextzugriff (PDF)

Multiple Tendon-inspired Sensors for Hand Motion Detection

Smart materials and structures, 2023-03, Vol.32 (3), p.35014

2023

Volltextzugriff (PDF)

Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering

IEEE electron device letters, 2015-01, Vol.36 (1), p.32-34

2015

Volltextzugriff (PDF)

Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application

Applied physics letters, 2015-09, Vol.107 (11)

2015

Volltextzugriff (PDF)

Detecting deformation of a soft cylindrical structure using piezoelectric sensors

Intelligent service robotics, 2024, Vol.17 (1), p.85-94

2024

Volltextzugriff (PDF)

Classification of Floor Materials using Piezoelectric Actuator-Sensor Pair and Deep Learning for Mobile Robots

IEEE access, 2024-01, Vol.12, p.1-1

2024

Volltextzugriff (PDF)

Design of prehospital spectral CT with a rotation-free rectangular gantry and deep learning reconstruction

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2024-06, Vol.1063, p.169299, Article 169299

2024

Volltextzugriff (PDF)

Data‐driven synthetic MRI FLAIR artifact correction via deep neural network

Journal of magnetic resonance imaging, 2019-11, Vol.50 (5), p.1413-1423

2019

Volltextzugriff (PDF)

Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory

Applied physics letters, 2014-02, Vol.104 (8)

2014

Volltextzugriff (PDF)

Multi-Input Deep Learning Based FMCW Radar Signal Classification

Electronics (Basel), 2021-05, Vol.10 (10), p.1144

2021

Volltextzugriff (PDF)

Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM

IEEE electron device letters, 2014-10, Vol.35 (10), p.1022-1024

2014

Volltextzugriff (PDF)

Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application

IEEE electron device letters, 2014-01, Vol.35 (1), p.60-62

2014

Volltextzugriff (PDF)

Hardware implementation of associative memory characteristics with analogue-type resistive-switching device

Nanotechnology, 2014-12, Vol.25 (49), p.495204-495204

2014

Volltextzugriff (PDF)

Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications

Applied physics letters, 2013-11, Vol.103 (20)

2013

Volltextzugriff (PDF)

Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory

Applied physics letters, 2014-02, Vol.104 (5)

2014

Volltextzugriff (PDF)

Vertically Stacked ReRAM Composed of a Bidirectional Selector and CB-RAM for Cross-Point Array Applications

IEEE electron device letters, 2013-12, Vol.34 (12), p.1512-1514

2013

Volltextzugriff (PDF)

High Current Density and Nonlinearity Combination of Selection Device Based on TaO x /TiO 2 /TaO x Structure for One Selector–One Resistor Arrays

ACS nano, 2012-09, Vol.6 (9), p.8166-8172

2012

Volltextzugriff (PDF)

Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM

IEEE electron device letters, 2014-06, Vol.35 (6), p.636-638

2014

Volltextzugriff (PDF)

Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory

Advanced materials (Weinheim), 2015-01, Vol.27 (1), p.59-64

2015

Volltextzugriff (PDF)

Defect Engineering Using Bilayer Structure in Filament-Type RRAM

IEEE electron device letters, 2013-10, Vol.34 (10), p.1250-1252

2013

Volltextzugriff (PDF)

Dissociation of Single-Strand DNA: Single-Walled Carbon Nanotube Hybrids by Watson−Crick Base-Pairing

Journal of the American Chemical Society, 2010-08, Vol.132 (32), p.10964-10966

2010

Volltextzugriff (PDF)

Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory

Nanoscale research letters, 2014-07, Vol.9 (1), p.364-364, Article 364

2014

Volltextzugriff (PDF)

Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications

Applied physics letters, 2013-03, Vol.102 (12)

2013

Volltextzugriff (PDF)

1 – 25 von 69

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(50)
Mit Volltextzugriff
(66)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(45)
Technology
(32)
Engineering
(23)
Physical Sciences
(23)
Engineering, Electrical & Electronic
(22)
Physics
(22)
Physics, Applied
(21)
Switches
(16)
Arrays
(13)
Exact Sciences And Technology
(13)
Applied Sciences
(12)
Devices
(12)
Electrodes
(12)
Reliability
(12)
Electronics
(10)
Integrated Circuits
(10)
Design. Technologies. Operation Analysis. Testing
(9)
Hafnium Compounds
(9)
Resistance
(9)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(9)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Uncertainty Analysis of Two-Step and Three-Step Methods for Deembedding On-Wafer RF Transistor Measurements

An improved RF MOSFET model including scalable gate resistance and external inductances

Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application

Multiple Tendon-inspired Sensors for Hand Motion Detection

Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering

Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application

Detecting deformation of a soft cylindrical structure using piezoelectric sensors

Classification of Floor Materials using Piezoelectric Actuator-Sensor Pair and Deep Learning for Mobile Robots

Design of prehospital spectral CT with a rotation-free rectangular gantry and deep learning reconstruction

Data‐driven synthetic MRI FLAIR artifact correction via deep neural network

Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory

Multi-Input Deep Learning Based FMCW Radar Signal Classification

Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM

Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application

Hardware implementation of associative memory characteristics with analogue-type resistive-switching device

Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications

Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory

Vertically Stacked ReRAM Composed of a Bidirectional Selector and CB-RAM for Cross-Point Array Applications

High Current Density and Nonlinearity Combination of Selection Device Based on TaO x /TiO 2 /TaO x Structure for One Selector–One Resistor Arrays

Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM

Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory

Defect Engineering Using Bilayer Structure in Filament-Type RRAM

Dissociation of Single-Strand DNA: Single-Walled Carbon Nanotube Hybrids by Watson−Crick Base-Pairing

Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory

Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications

Suchergebnisse filtern