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Strain-enhanced electron mobility and mobility anisotropy in a two-dimensional vanadium diselenide monolayer

Journal of applied physics, 2019-07, Vol.126 (4)

2019

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Analysis of electrical-field-dependent Dzyaloshinskii-Moriya interaction and magnetocrystalline anisotropy in a two-dimensional ferromagnetic monolayer

Physical review. B, 2018-02, Vol.97 (5), Article 054416

2018

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Research on the Influence of Bond Wire Lift-Off Position on the Electro-Thermal Characteristics of IGBT

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1271-1278

2022

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Design of the VRLA Battery Real-Time Monitoring System Based on Wireless Communication

Sensors (Basel, Switzerland), 2020-08, Vol.20 (15), p.4350

2020

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Effect of Zn2+ substitution for Mg2+ in Li3Mg2SbO6 and the impact on the bond characteristics and microwave dielectric properties

Journal of alloys and compounds, 2020-08, Vol.832, p.155043, Article 155043

2020

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Ultra-Fast (ns-Scale) Characterization of NBTI Behaviors in Si pFinFETs

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.577-583

2020

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Low Interface Trapped Charge Density for AlO/β-GaO (001) Metal-Insulator-Semiconductor Capacitor

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.942-946

2022

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PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic

IEEE transactions on electron devices, 2014-11, Vol.61 (11), p.3613-3618

2014

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IEEE_Xplore

Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

Advances in Condensed Matter Physics, 2015-01, Vol.2015, p.1-9

2015

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Strong photoluminescence from ultrathin silicon (110) quantum wells at room temperature

Japanese Journal of Applied Physics, 2017-02, Vol.56 (2), p.20305-020305

2017

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Analysis of sub-threshold electron transport properties of ultra-scaled amorphous phase change material germanium telluride (invited paper)

2017 IEEE 12th International Conference on ASIC (ASICON), 2017, p.480-483

2017

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IEEE_Xplore

Integration of Solar Cells on Top of CMOS Chips-Part II: CIGS Solar Cells

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2620-2627

2011

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IEEE_Xplore

An Empirical-Data Hybrid Driven Approach for Remaining Useful Life prediction of lithium-ion batteries considering capacity diving

Energy (Oxford), 2022-04, Vol.245, p.123222, Article 123222

2022

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Si- and Ge-Based Electronic Devices

Advances in Condensed Matter Physics, 2015-01, Vol.2015, p.1-1

2015

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Integration of Solar Cells on Top of CMOS Chips Part I: a-Si Solar Cells

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.2014-2021

2011

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IEEE_Xplore

EdgeLSTM: Towards Deep and Sequential Edge Computing for IoT Applications

IEEE/ACM transactions on networking, 2021-08, Vol.29 (4), p.1895-1908

2021

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IEEE_Xplore

Multi-scale analysis of strain-dependent magnetocrystalline anisotropy and strain-induced Villari and Nagaoka-Honda effects in a two-dimensional ferromagnetic chromium tri-iodide monolayer

Journal of applied physics, 2018-07, Vol.124 (4)

2018

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Structure, bond characteristics and Raman spectra of CaMg1-xMnxSi2O6 microwave dielectric ceramics

Ceramics international, 2019-08, Vol.45 (11), p.14160-14166

2019

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Pre-deposition growth of interfacial SiO2 layer by low-oxygen-partial-pressure oxidation in the Al2O3/4H-SiC MOS structure

Microelectronic engineering, 2021-05, Vol.244-246, p.111574, Article 111574

2021

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Study of β -Ga 2 O 3 (001)/sapphire (a-plane) heterostructure in wide bandgap solar-blind deep-ultraviolet photodetector

Journal of crystal growth, 2024-02, Vol.628, p.127513, Article 127513

2024

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High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer

Journal of alloys and compounds, 2023-04, Vol.939, p.168732, Article 168732

2023

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Vibrotactile Warnings Design for Improving Risks Awareness in Construction Environment

International journal of human-computer interaction, 2024-06, p.1-23

2024

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Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs

Advances in Condensed Matter Physics, 2015-01, Vol.2015, p.1-6

2015

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Responsivity Enhanced NMOSFET Photodetector Fabricated by Standard CMOS Technology

Advances in Condensed Matter Physics, 2015-01, Vol.2015, p.1-5

2015

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Electrical Properties of Al2O3/ZnO Metal-Insulator-Semiconductor Capacitors

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.5033-5038

2020

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IEEE_Xplore

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Strain-enhanced electron mobility and mobility anisotropy in a two-dimensional vanadium diselenide monolayer

Analysis of electrical-field-dependent Dzyaloshinskii-Moriya interaction and magnetocrystalline anisotropy in a two-dimensional ferromagnetic monolayer

Research on the Influence of Bond Wire Lift-Off Position on the Electro-Thermal Characteristics of IGBT

Design of the VRLA Battery Real-Time Monitoring System Based on Wireless Communication

Effect of Zn2+ substitution for Mg2+ in Li3Mg2SbO6 and the impact on the bond characteristics and microwave dielectric properties

Ultra-Fast (ns-Scale) Characterization of NBTI Behaviors in Si pFinFETs

Low Interface Trapped Charge Density for AlO/β-GaO (001) Metal-Insulator-Semiconductor Capacitor

PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic

Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

Strong photoluminescence from ultrathin silicon (110) quantum wells at room temperature

Analysis of sub-threshold electron transport properties of ultra-scaled amorphous phase change material germanium telluride (invited paper)

Integration of Solar Cells on Top of CMOS Chips-Part II: CIGS Solar Cells

An Empirical-Data Hybrid Driven Approach for Remaining Useful Life prediction of lithium-ion batteries considering capacity diving

Si- and Ge-Based Electronic Devices

Integration of Solar Cells on Top of CMOS Chips Part I: a-Si Solar Cells

EdgeLSTM: Towards Deep and Sequential Edge Computing for IoT Applications

Multi-scale analysis of strain-dependent magnetocrystalline anisotropy and strain-induced Villari and Nagaoka-Honda effects in a two-dimensional ferromagnetic chromium tri-iodide monolayer

Structure, bond characteristics and Raman spectra of CaMg1-xMnxSi2O6 microwave dielectric ceramics

Pre-deposition growth of interfacial SiO2 layer by low-oxygen-partial-pressure oxidation in the Al2O3/4H-SiC MOS structure

Study of β -Ga 2 O 3 (001)/sapphire (a-plane) heterostructure in wide bandgap solar-blind deep-ultraviolet photodetector

High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer

Vibrotactile Warnings Design for Improving Risks Awareness in Construction Environment

Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs

Responsivity Enhanced NMOSFET Photodetector Fabricated by Standard CMOS Technology

Electrical Properties of Al2O3/ZnO Metal-Insulator-Semiconductor Capacitors

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