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Work function variation of nickel silicide using an ytterbium buffer layer for Schottky barrier metal-oxide-semiconductor field-effect transistors

Journal of applied physics, 2007-05, Vol.101 (10)

2007

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The Effect of Triple Capping Layer (Ti∕Ni∕TiN) on the Electrical and Structural Properties of Nickel Monosilicide

Journal of the Electrochemical Society, 2006, Vol.153 (1), p.G35

2006

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Influence on Accelerated Soft Error Rate in Static Random Access Memory using Metal Plate Capacitor Structure

Japanese Journal of Applied Physics, 2006-09, Vol.45 (9R), p.6837

2006

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Thermal Stability Improvement of Ni-Germano silicide Utilizing Ni-Pd Alloy for Nanoscale CMOS Technology

IEEE transactions on nanotechnology, 2007-07, Vol.6 (4), p.431-437

2007

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Characterization of the Dopant Dependence of Ni-Silicide on a SOI Substrate for a Nano-Scale CMOSFET

Journal of the Korean Physical Society, 2007, 50(6), , pp.1883-1886

2007

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Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology

Japanese Journal of Applied Physics, 2004-01, Vol.43 (1), p.91-95

2004

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Improvement of Thermal Stability of Nickel Silicide Using Multi-Capping Structure

Solid state phenomena, 2007-03, Vol.121-123, p.1261-1264

2007

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Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation

Japanese Journal of Applied Physics, 2004-10, Vol.43 (10), p.6998-6999

2004

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Micro Semiconductor CO Sensors Based on Indium-Doped Tin Dioxide Nanocrystalline Powders

Sensors (Basel, Switzerland), 2006-05, Vol.6 (5), p.526-535

2006

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Time-Dependent Dielectric Breakdown of La2O3-Doped High-k/Metal Gate Stacked NMOSFETs

IEEE electron device letters, 2009-03, Vol.30 (3), p.298-301

2009

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Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2171

2005

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Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide

Japanese Journal of Applied Physics, 2010-05, Vol.49 (5), p.055701-055701-3

2010

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Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.102-105

2008

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Influence of an Oxide Interlayer Dielectric (ILD) Capping Layeron the Thermal Stability of Ni Germanide for Nanoscale Ge MOSFETs

Journal of the Korean Physical Society, 2009-09, Vol.55 (3(1)), p.1026-1030

2009

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Suppression of Nickel-germanide (NiGe) Agglomeration and Ni Penetration by Hydrogen (H) Ion Shower Doping in NiGe on a Thin Epitaxial Ge-on-Si Substrate

Journal of the Korean Physical Society, 2009, 55(1), , pp.221-226

2009

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Effect of texture morphology on the surface passivation and a-Si/c-Si heterojunction solar cells

2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, p.000642-000645

2009

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Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.2980

2006

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Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs

Electrochemical and solid-state letters, 2009, Vol.12 (1), p.H18

2009

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Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2142

2005

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Novel Ni Germanosilicide Technology Using N-Doped Ni and Ni Stack Structure for Nano CMOS Applications

Solid state phenomena, 2007-03, Vol.121-123, p.623-626

2007

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Study of Thermal Stability of Ni Silicide using Ni-V Alloy

Transactions on electrical and electronic materials, 2008-04, Vol.9 (2), p.47-51

2008

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Microstructural Innovation of Ni Germanide on Ge-on-Si Substrate by Using Palladium Incorporation

Electrochemical and solid-state letters, 2009, Vol.12 (11), p.H402

2009

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Thermally Robust Nickel Silicide Process for Nano-Scale CMOS Technology

IEICE transactions on electronics, 2005-04, Vol.E88-C (4), p.651-655

OH, S.-Y.

2005

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Micro hydrogen gas sensor of SnO2-Ag2O-PtOx system using the MEMS process

2006 5th IEEE Conference on Sensors, 2006, p.212-215

2006

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Fabrication and design of an auto ventilation controller using micro gas sensor for the clean room/building environment

IEEE Sensors, 2005, 2005, p.3 pp.

2005

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Work function variation of nickel silicide using an ytterbium buffer layer for Schottky barrier metal-oxide-semiconductor field-effect transistors

The Effect of Triple Capping Layer (Ti∕Ni∕TiN) on the Electrical and Structural Properties of Nickel Monosilicide

Influence on Accelerated Soft Error Rate in Static Random Access Memory using Metal Plate Capacitor Structure

Thermal Stability Improvement of Ni-Germano silicide Utilizing Ni-Pd Alloy for Nanoscale CMOS Technology

Characterization of the Dopant Dependence of Ni-Silicide on a SOI Substrate for a Nano-Scale CMOSFET

Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology

Improvement of Thermal Stability of Nickel Silicide Using Multi-Capping Structure

Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation

Micro Semiconductor CO Sensors Based on Indium-Doped Tin Dioxide Nanocrystalline Powders

Time-Dependent Dielectric Breakdown of La2O3-Doped High-k/Metal Gate Stacked NMOSFETs

Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs

Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide

Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate

Influence of an Oxide Interlayer Dielectric (ILD) Capping Layeron the Thermal Stability of Ni Germanide for Nanoscale Ge MOSFETs

Suppression of Nickel-germanide (NiGe) Agglomeration and Ni Penetration by Hydrogen (H) Ion Shower Doping in NiGe on a Thin Epitaxial Ge-on-Si Substrate

Effect of texture morphology on the surface passivation and a-Si/c-Si heterojunction solar cells

Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications

Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs

Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology

Novel Ni Germanosilicide Technology Using N-Doped Ni and Ni Stack Structure for Nano CMOS Applications

Study of Thermal Stability of Ni Silicide using Ni-V Alloy

Microstructural Innovation of Ni Germanide on Ge-on-Si Substrate by Using Palladium Incorporation

Thermally Robust Nickel Silicide Process for Nano-Scale CMOS Technology

Micro hydrogen gas sensor of SnO2-Ag2O-PtOx system using the MEMS process

Fabrication and design of an auto ventilation controller using micro gas sensor for the clean room/building environment

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