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Hole trap effect on time-dependent-dielectric breakdown (TDDB) of high-voltage peripheral nMOSFETs in flash memory application

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.DG-6.1-DG-6.3

2017

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Field dependence of barrier heights and luminescence properties in polar and nonpolar InGaN/GaN single quantum wells

Applied physics letters, 2009-11, Vol.95 (18), p.182109-182109-3

2009

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Study on Energy Band of InGaN/GaN Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy

Japanese Journal of Applied Physics, 2005-07, Vol.44 (7S), p.5670

2005

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Carrier Dynamics of Deep-Level States in InGaN/GaN Multiquantum Wells

Japanese Journal of Applied Physics, 2009-06, Vol.48 (6S), p.6

2009

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Study on the Energy-Band Structure of Indium-Rich InGaN/GaN Quantum Dot System

Journal of the Korean Physical Society, 2007, 51(3), , pp.1195-1198

2007

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Growth and Characterization of High Quality $a$-Plane InGaN/GaN Single Quantum Well Structure Grown by Multibuffer Layer Technique

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DH03-04DH03-3

2010

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DLTS Study of InGaAs/InGaAsP Double-layered QDs with Various Spacer Layers

Journal of the Korean Physical Society, 2009, 55(3), , pp.1041-1045

2009

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Electrical Properties of Digital-Alloy (AlxGa1-x)As/GaAs During Molecular Beam Epitaxy Growth

Journal of the Korean Physical Society, 2007, 50(6), , pp.1912-1915

2007

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Electrical and Optical Properties of p-Type InMnP:Zn for Nano-spintronics

Japanese Journal of Applied Physics, 2008-06, Vol.47 (6S), p.5066

2008

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Optical, structural, and magnetic properties of p-type InMnP:Zn implanted with the Mn (1 and 10 at.%)

Solid state communications, 2007-10, Vol.144 (3), p.128-133

2007

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Study on Defect States in GaN Epilayer Induced by Irradiation of High-Energy Electrons

Japanese Journal of Applied Physics, 2008-08, Vol.47 (8S2), p.6867

2008

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Electrical Properties of InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetectors

Japanese Journal of Applied Physics, 2006-06, Vol.45 (6S), p.5575

2006

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A study on the energy bands of multi-quantum wells in the quantum cascade laser structure by deep-level transient spectroscopy

Semiconductor science and technology, 2006-08, Vol.21 (8), p.1069-1072

2006

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Optical, structural, and magnetic properties of p-type GaN implanted with Fe+ (5 and 10 at%)

Physica status solidi. A, Applications and materials science, 2007-01, Vol.204 (1), p.78-85

2007

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Electrical Characterization of GaAs/AlGaAs Multi-Quantum Wells for Quantum Cascade Laser

Japanese Journal of Applied Physics, 2006-06, Vol.45 (6S), p.5478

2006

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Accumulation of argpyrimidine, a methylglyoxal-derived advanced glycation end product, increases apoptosis of lens epithelial cells both in vitro and in vivo

Experimental and Molecular Medicine, 2012, 44(2), , pp.167-175

2012

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Structural, Optical, and Magnetic Characteristics of an InMnP:Zn Epilayer

Journal of the Korean Physical Society, 2007, 50(3), , pp.814-818

2007

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The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD

Physica. E, Low-dimensional systems & nanostructures, 2005-02, Vol.26 (1), p.169-173

2005

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Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique

Nanotechnology, 2010-04, Vol.21 (13), p.134026-134026

2010

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Relevant correlation between electrical and magnetic properties for p-type InP:Zn implanted with Mn (10 at. %)

Applied physics letters, 2008-12, Vol.93 (24)

2008

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Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.31.2.1-31.2.4

2016

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Relevant correlation between electrical and magnetic propertiesfor p -type InP:Zn implanted with Mn ( 10 at . % )

Applied physics letters, 2008-12, Vol.93 (24), p.242110-242110-3

2008

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Capacitance Transient Analysis of Different-Sized InAs/GaAs Quantum Dot Structures

Journal of nanoscience and nanotechnology, 2011-07, Vol.11 (7), p.6504-6509

2011

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Analysis of energy levels of InAs/GaAs self-assembled quantum dots by using C -V and deep level transient spectroscopy

Physica Status Solidi (b), 2009-04, Vol.246 (4), p.808-811

2009

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Nonpolar growth and characterization of a-plane InGaN/GaN quantum well structures with different indium compositions

Solid-state electronics, 2010-10, Vol.54 (10), p.1221-1226

2010

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Hole trap effect on time-dependent-dielectric breakdown (TDDB) of high-voltage peripheral nMOSFETs in flash memory application

Field dependence of barrier heights and luminescence properties in polar and nonpolar InGaN/GaN single quantum wells

Study on Energy Band of InGaN/GaN Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy

Carrier Dynamics of Deep-Level States in InGaN/GaN Multiquantum Wells

Study on the Energy-Band Structure of Indium-Rich InGaN/GaN Quantum Dot System

Growth and Characterization of High Quality $a$-Plane InGaN/GaN Single Quantum Well Structure Grown by Multibuffer Layer Technique

DLTS Study of InGaAs/InGaAsP Double-layered QDs with Various Spacer Layers

Electrical Properties of Digital-Alloy (AlxGa1-x)As/GaAs During Molecular Beam Epitaxy Growth

Electrical and Optical Properties of p-Type InMnP:Zn for Nano-spintronics

Optical, structural, and magnetic properties of p-type InMnP:Zn implanted with the Mn (1 and 10 at.%)

Study on Defect States in GaN Epilayer Induced by Irradiation of High-Energy Electrons

Electrical Properties of InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetectors

A study on the energy bands of multi-quantum wells in the quantum cascade laser structure by deep-level transient spectroscopy

Optical, structural, and magnetic properties of p-type GaN implanted with Fe+ (5 and 10 at%)

Electrical Characterization of GaAs/AlGaAs Multi-Quantum Wells for Quantum Cascade Laser

Accumulation of argpyrimidine, a methylglyoxal-derived advanced glycation end product, increases apoptosis of lens epithelial cells both in vitro and in vivo

Structural, Optical, and Magnetic Characteristics of an InMnP:Zn Epilayer

The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD

Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique

Relevant correlation between electrical and magnetic properties for p-type InP:Zn implanted with Mn (10 at. %)

Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB

Relevant correlation between electrical and magnetic propertiesfor p -type InP:Zn implanted with Mn ( 10 at . % )

Capacitance Transient Analysis of Different-Sized InAs/GaAs Quantum Dot Structures

Analysis of energy levels of InAs/GaAs self-assembled quantum dots by using C -V and deep level transient spectroscopy

Nonpolar growth and characterization of a-plane InGaN/GaN quantum well structures with different indium compositions

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